Search Results - "Aoki, Nobutoshi"

Effect of the Titanium Nanoparticle on the Quantum Chemical Characterization of the Liquid Sodium Nanofluid by Suzuki, Ai, Bonnaud, Patrick, Williams, Mark C, Selvam, Parasuraman, Aoki, Nobutoshi, Miyano, Masayuki, Miyamoto, Akira, Saito, Jun-ichi, Ara, Kuniaki

“…Suspension state of a titanium nanoparticle in the liquid sodium was quantum chemically characterized by comparing physical characteristics, viz., electronic…”
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Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor by Izumida, Takashi, Okano, Kimitoshi, Kanemura, Takahisa, Kondo, Masaki, Inaba, Satoshi, Itoh, Sanae, Aoki, Nobutoshi, Toyoshima, Yoshiaki

“…The impact of plasma doping (PD) on the formation of source/drain extension (SDE) is demonstrated for a p-type bulk fin field effect transistor (FinFET). The…”
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Contribution of Carbon to Activation and Diffusion of Boron in Silicon by Itokawa, Hiroshi, Agatsuma, Yuji, Aoki, Nobutoshi, Uchitomi, Naotaka, Mizushima, Ichiro

“…It is well-known that the coimplantation of carbon (C) in a concentration range comparable to the range of boron (B) concentrations could suppress B diffusion,…”
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Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin by Izumida, Takashi, Okano, Kimitoshi, Kanemura, Takahisa, Kondo, Masaki, Inaba, Satoshi, Itoh, Sanae, Aoki, Nobutoshi, Toyoshima, Yoshiaki

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Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor by Izumida, Takashi, Okano, Kimitoshi, Kanemura, Takahisa, Kondo, Masaki, Inaba, Satoshi, Itoh, Sanae, Aoki, Nobutoshi, Toyoshima, Yoshiaki

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In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor by Okamoto, Hiroki, Hokazono, Akira, Adachi, Kanna, Yasutake, Nobuaki, Itokawa, Hiroshi, Okamoto, Shintaro, Kondo, Masaki, Tsujii, Hideji, Ishida, Tatsuya, Aoki, Nobutoshi, Fujiwara, Makoto, Kawanaka, Shigeru, Azuma, Atsushi, Toyoshima, Yoshiaki

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Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory by Mizukami, Makoto, Nishihara, Kiyohito, Ishida, Hirokazu, Aiso, Fumiki, Iguchi, Tadashi, Ichinose, Daigo, Fukumoto, Atsushi, Aoki, Nobutoshi, Kondo, Masaki, Izumida, Takashi, Tanimoto, Hiroyoshi, Enda, Toshiyuki, Watanabe, Hiroshi, Toriyama, Shuichi, Suzuki, Takashi, Mizushima, Ichiro, Arai, Fumitaka

“…To reduce the short-channel effect for memory cell transistors beyond 2× nm cell size for NAND electrically erasable programmable read only memories (EEPROMs),…”
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Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling by Hogyoku, Michiru, Izumida, Takashi, Tanimoto, Hiroyoshi, Aoki, Nobutoshi, Onoue, Seiji

“…Seto's model based on thermionic emission (TE) theory explains that the grain-boundary (GB)-limited carrier mobility in polycrystalline silicon (poly-Si) has a…”
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Ultra high dose boron ion implantation: super-saturation of boron and its application by Mizushima, Ichiro, Murakoshi, Atsushi, Suguro, Kyoichi, Aoki, Nobutoshi, Yamauchi, Jun

“…Super-saturation of dopant atoms in silicon has been attracting interest because a high concentration of carriers in silicon is required in practical…”
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Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD) by Sato, Tsutomu, Mizushima, Ichiro, Aoki, Nobutoshi, Tsunashima, Yoshitaka

“…The dominant factor for the surface concentration of n-type impurity, introduced by vapor phase doping technique using phosphine, was investigated and the…”
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Source/drain engineering for MOSFETs with embedded-Si:C technology by Itokawa, Hiroshi, Yasutake, Nobuaki, Kusunoki, Naoki, Okamoto, Shintaro, Aoki, Nobutoshi, Mizushima, Ichiro

“…Embedded silicon carbon alloy (e-Si:C) technology for source and drain (S/D) is expected to improve nMOSFET drive current. The distribution and activation…”
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Direct evaluation of DC characteristic variability in FinFET SRAM Cell for 32 nm node and beyond by Inaba, S., Kawasaki, H., Okano, K., Izumida, T., Yagishita, A., Kaneko, A., Ishimaru, K., Aoki, N., Toyoshima, Y.

“…V t variability in FinFET SRAM is evaluated for the first time by direct measurement of the cell transistors down to 25 nm gate length. By taking the V,…”
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Atomistic study of sulfur diffusion and S2 formation in silicon during low-temperature rapid thermal annealing by Kanemura, Takahisa, Kato, Koichi, Tanimoto, Hiroyoshi, Aoki, Nobutoshi, Toyoshima, Yoshiaki

“…Theoretical analyses predict that large Schottky barrier reduction by sulfur doping at NiSi/Si junction is induced by S2 formation. The S2 formation may have…”
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Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin by Izumida, Takashi, Okano, Kimitoshi, Kanemura, Takahisa, Kondo, Masaki, Inaba, Satoshi, Itoh, Sanae, Aoki, Nobutoshi, Toyoshima, Yoshiaki

“…We investigated the diffusion of implanted boron and phosphorous in a narrow Si fin during rapid thermal annealing (RTA) at 1000 °C for 10 s. We found that the…”
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A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond by Yasutake, Nobuaki, Azuma, Atsushi, Ishida, Tatsuya, Ohuchi, Kazuya, Aoki, Nobutoshi, Kusunoki, Naoki, Mori, Shinji, Mizushima, Ichiro, Morooka, Tetsu, Kawanaka, Shigeru, Toyoshima, Yoshiaki

“…A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe-source/drain (S/D) is developed with careful optimization of recessed…”
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Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for $2\times$ nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory by Mizukami, Makoto, Nishihara, Kiyohito, Ishida, Hirokazu, Aiso, Fumiki, Iguchi, Tadashi, Ichinose, Daigo, Fukumoto, Atsushi, Aoki, Nobutoshi, Kondo, Masaki, Izumida, Takashi, Tanimoto, Hiroyoshi, Enda, Toshiyuki, Watanabe, Hiroshi, Toriyama, Shuichi, Suzuki, Takashi, Mizushima, Ichiro, Arai, Fumitaka

“…To reduce the short-channel effect for memory cell transistors beyond $2\times$ nm cell size for NAND electrically erasable programmable read only memories…”
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A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond by Yasutake, Nobuaki, Azuma, Atsushi, Ishida, Tatsuya, Ohuchi, Kazuya, Aoki, Nobutoshi, Kusunoki, Naoki, Mori, Shinji, Mizushima, Ichiro, Morooka, Tetsu, Kawanaka, Shigeru, Toyoshima, Yoshiaki

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Modeling of Electron Mobility Degradation for HfSiON MISFETs by Tanimoto, Hiroyoshi, Kondo, Masaki, Enda, Toshiyuki, Aoki, Nobutoshi, Iijima, Ryosuke, Watanabe, Takeshi, Takayanagi, Mariko, Ishiuchi, Hidemi

“…The electron mobility degradation for HfSiON MISFETs was investigated. We found that the degradation had two origins; one is Coulomb scattering caused by fixed…”
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Compact and Efficient Monte Carlo Method to Reproduce Size Effect on Resistivity in Sub-0.1μm Metallic Interconnects by Kurusu, T., Wada, M., Matsunaga, N., Tanimoto, H., Aoki, N., Toyoshima, Y., Shibata, H.

“…We present a compact and efficient Monte Carlo method to reproduce a size effect on resistivity in sub-0.1 mum metallic interconnects. Implementation of our…”
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Deactivation mechanism of In atoms doped in a Si crystal and reactivation due to codoping with B and C by YAMAUCHI, Jun, AOKI, Nobutoshi

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