Search Results - "Annema, A.J."
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1
Analytical Design Equations for Class-E Power Amplifiers
Published in IEEE transactions on circuits and systems. I, Regular papers (01-12-2007)“…This paper presents the analytical solution in time domain for the ideal single-ended class-E power amplifier (PA). Based on the analytical solution a coherent…”
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2
A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 \mum CMOS Technology
Published in IEEE transactions on nuclear science (01-12-2007)“…With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased radiation tolerance of MOS transistors. Combined with…”
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3
A sub-1V bandgap voltage reference in 32nm FinFET technology
Published in 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01-02-2009)“…The bulk CMOS technology is expected to scale down to about 32 nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body…”
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Conference Proceeding -
4
A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 [mu]m CMOS Technology
Published in IEEE transactions on nuclear science (01-12-2007)“…Measurements show correct operation with supply voltages in the range from 1.4 V down to 0.85 V, a reference voltage of 405 mV plusmn 7.5 mV ( sigma = 6 mV…”
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5
Variable-Voltage Class-E Power Amplifiers
Published in 2007 IEEE/MTT-S International Microwave Symposium (01-06-2007)“…The class-E power amplifier is widely used due to its high efficiency, resulting from switching at zero voltage and zero slope of the switch voltage. In this…”
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Conference Proceeding -
6
A general weak nonlinearity model for LNAs
Published in 2008 IEEE Custom Integrated Circuits Conference (01-09-2008)“…This paper presents a general weak nonlinearity model that can be used to model, analyze and describe the distortion behavior of various low noise amplifier…”
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7
An integrated optical link in 140 nm SOI technology
Published in 2016 Conference on Lasers and Electro-Optics (CLEO) (01-06-2016)“…A silicon-on-insulator based optical link is introduced. Higher opto-coupling efficiency and temperature-resilience are obtained via avalanche-mode…”
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8
A 1-V 15 W High-Accuracy Temperature Switch
Published in Analog integrated circuits and signal processing (01-10-2004)“…A CMOS temperature switch with uncalibrated high accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic…”
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9
An audio FIR-DAC in a BCD process for high power class-D amplifiers
Published in Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005 (2005)“…A 322 coefficient semi-digital FIR-DAC using a 1-bit PWM input signal was designed and implemented in a high voltage, audio power bipolar CMOS DMOS (BCD)…”
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10
Designing outside rail constraints
Published in 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) (2004)“…CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds matching tolerances requiring active cancellation techniques. One…”
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11
Generalized Design Equations for Class-E Power Amplifiers with Finite DC Feed Inductance
Published in 2006 European Microwave Conference (01-09-2006)“…In literature, it is widely accepted that the design of class-E power amplifier (PA) with finite dc feed inductance requires a long iterative solution…”
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Conference Proceeding -
12
Generalized Analytical Design Equations for Variable Slope Class-E Power Amplifiers
Published in 2006 13th IEEE International Conference on Electronics, Circuits and Systems (01-12-2006)“…The Class-E power amplifier is widely used because of its high efficiency, resulting from switching at zero voltage and zero slope of the switch voltage. In…”
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Conference Proceeding -
13
A simple model for analogue applications of dynamic threshold MOSTs
Published in 29th European Solid-State Device Research Conference (1999)“…We describe a practical model for the dynamic threshold MOST, used in analogue applications. Comparison with device simulations and measurements for several…”
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14
A 1-V 15 µ W high-precision temperature switch
Published in Proceedings of the 27th European Solid-State Circuits Conference (2001)“…A CMOS temperature switch with uncalibrated high temperature accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure,…”
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Conference Proceeding -
15
Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology
Published in 2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) (2003)“…The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic…”
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16
Precision requirements for single-layer feedforward neural networks
Published in Proceedings of the Fourth International Conference on Microelectronics for Neural Networks and Fuzzy Systems (1994)“…This paper presents a mathematical analysis of the effect of limited precision analog hardware for weight adaptation to be used in on-chip learning feedforward…”
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