Search Results - "Aniel, F"

Tensile-strained germanium microdisk electroluminescence by Prost, M, El Kurdi, M, Ghrib, A, Sauvage, S, Checoury, X, Zerounian, N, Aniel, F, Beaudoin, G, Sagnes, I, Boeuf, F, Boucaud, P

“…We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride…”
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Schottky electroluminescent diodes with n-doped germanium by Prost, M., El Kurdi, M., Ghrib, A., Checoury, X., Zerounian, N., Aniel, F., Beaudoin, G., Sagnes, I., Baudot, C., Boeuf, F., Boucaud, P.

“…n-doped germanium can be used as an active material for the realization of an optical source under electrical pumping. We propose to use Schottky contacts for…”
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Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating by Spisser, H., Grimault-Jacquin, A.-S., Zerounian, N., Aassime, A., Cao, L., Boone, F., Maher, H., Cordier, Y., Aniel, F.

“…In this paper, we present sensitivity measurement as well as measured and calculated absorption spectra for AlGaN/GaN THz plasmonic detector made of a metallic…”
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Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys by Michaillat, M., Rideau, D., Aniel, F., Tavernier, C., Jaouen, H.

“…Hole transport properties in relaxed and biaxially strained Si 1- x Ge x , Si 1- y C y and Si 1- x- y Ge x C y alloys are investigated using a Full-Band Monte…”
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Optimal structure for resonant THz detection of plasmons-polaritons in the 2D quantum wells by Cao, L., Grimault-Jacquin, A.-S., Aniel, F., Poisson, M. -A., Delage, S., Sagnes, I., Le Gratiet, L.

“…We investigate terahertz plasmon-polariton (PP) resonances for hetero-structures (AlGaN/GaN, SiGe/Si/SiGe, AlGaAs/GaAs and InAlN/GaN) with grating coupler in…”
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Coupling 3-D Maxwell's and Boltzmann's equations for analyzing a terahertz photoconductive switch by Sirbu, M., Lepaul, S.B.P., Aniel, F.

“…We present a terahertz photoconductive switch analysis. We explain the mechanism that allows the generation of the electromagnetic pulse and the phenomena that…”
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SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time by Ramirez-Garcia, E., Michaillat, M., Aniel, F., Zerounian, N., Enciso-Aguilar, M., Rideau, D.

“…► An original method to perform transit time analysis in SiGe HBT is described. ► It relies on analytical models of carrier mobilities and of energy relaxation…”
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230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications by Chevalier, P., Fellous, C., Rubaldo, L., Pourchon, F., Pruvost, S., Beerkens, R., Saguin, F., Zerounian, N., Barbalat, B., Lepilliet, S., Dutartre, D., Celi, D., Telliez, I., Gloria, D., Aniel, F., Danneville, F., Chantre, A.

“…This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology. The technical choices such as the…”
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Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition by Brunhes, T., Boucaud, P., Sauvage, S., Aniel, F., Lourtioz, J.-M., Hernandez, C., Campidelli, Y., Kermarrec, O., Bensahel, D., Faini, G., Sagnes, I.

“…We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p–i–n diodes consists of Ge/Si self-assembled quantum…”
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SiGe heterojunction bipolar transistor issues towards high cryogenic performances by Ramirez-Garcia, E., Zerounian, N., Crozat, P., Enciso-Aguilar, M., Chevalier, P., Chantre, A., Aniel, F.

“…The performances increase at low temperature make the SiGe HBT a masterpiece for cryogenic circuits. The time-progressive enhancement of f T and f MAX toward…”
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Temperature dependence of the absorption saturation relaxation time in light- and heavy-ion-irradiated bulk GaAs by Mangeney, J., Stelmakh, N., Aniel, F., Boucaud, P., Lourtioz, J.-M.

“…The absorption saturation relaxation time in light- and heavy-ion-irradiated GaAs saturable absorbers has been measured as a function of the temperature in the…”
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Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET by Zerounian, N., Enciso-Aguilar, M., Hackbarth, T., Herzog, H.-J., Aniel, F.

“…The influence of parasitic capacitance on high frequency performances of SiGe n-HFET is reported. These capacitances arising from the fringe and electrostatic…”
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Microwave noise performance and modeling of SiGe-based HFETs by Aguilar, M.E., Crozat, P., Hackbarth, T., Herzog, H.-J., Aniel, F.

“…Microwave noise performance of SiGe-based heterostructure field effect transistors (HFETs) is presented. Noise parameters for devices with buried channel…”
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Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance by Hackbarth, T., Herzog, H.-J., Hieber, K.-H., König, U., Mantl, S., Holländer, B., Lenk, St, von Känel, H., Enciso, M., Aniel, F., Giguerre, L.

“…Strained-Si based SiGe MODFETs on ultra-thin SiGe virtual substrates prepared by molecular beam epitaxy (MBE) and helium implantation are presented and…”
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Double-Heterojunction Bipolar Transistor as THz Detector for Communications by Diouf, I., Nouvel, P., Varani, L., Penarier, A., Diakonova, N., Coquillat, D., Nodjiadjim, V., Riet, M., Zerounian, N., Aniel, F., Blin, S.

“…We investigate the use of an InP-based double-heterojunction bipolar transistor as a detector for wireless communications around 300~GHz. The sensitivity of…”
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BenzoCycloButene-based in-Package Substrate Integrated Waveguides for sub-THz Applications by Acri, G., Pistono, E., Podevin, F., Ferrari, P., Boccia, L., Grimault-Jacquin, A.-S., Zerounian, N., Aniel, F., Vincent, L.

“…This paper introduces an experimental characterization of substrate integrated waveguide (SIW) components integrated in a benzocyclobutene-based interposer for…”
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Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy by Dashiell, M.W., Kolodzey, J., Crozat, P., Aniel, F., Lourtioz, J.M.

“…The bias dependence of the single-port microwave reflection gain of 15 μm-diameter Si Esaki tunnel diodes, grown by molecular beam epitaxy, was studied as a…”
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Strained Si HFETs for microwave applications: state-of-the-art and further approaches by Enciso Aguilar, M., Rodriguez, M., Zerounian, N., Aniel, F., Hackbarth, T., Herzog, H.-J., König, U., Mantl, S., Holländer, B., Chrastina, D., Isella, G., von Känel, H., Lyutovich, K., Oehme, M.

“…This paper reviews the RF and noise performance of strained Si heterostructure field-effect transistors. For SiGe n-HFETs the high RF figures of merit f T=90…”
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Microwave performances of silicon heterostructure-FETs by Aniel, F., Enciso, M., Richard, S., Giguerre, L., Zerounian, N., Crozat, P., Adde, R., Hackbarth, T., Herzog, J-H., König, U.

“…We present the state of the art of microwave performances of silicon heterostructures FETs (hetero-FETs). Recent advances are illustrated on using…”
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Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier by Huyghe, S., Bechou, L., Zerounian, N., Deshayes, Y., Aniel, F., Denolle, A., Laffitte, D., Goudard, J.L., Danto, Y.

“…This paper demonstrates the complementary relation between functional parameters and electroluminescence spectroscopy for reliability investigations of 1550 nm…”
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