Search Results - "Anhar Uddin Bhuiyan, A F M"

MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties by Feng, Zixuan, Anhar Uddin Bhuiyan, A F M, Karim, Md Rezaul, Zhao, Hongping

“…Record-high electron mobilities were achieved for silicon-doped (010) β-Ga2O3 homoepitaxial films grown via metalorganic chemical vapor deposition (MOCVD). Key…”
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Mg acceptor doping in MOCVD (010) β-Ga2O3 by Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Kalarickal, Nidhin Kurian, Rajan, Siddharth, Zhao, Hongping

“…In this Letter, in situ Mg doping in β-Ga2O3 was demonstrated via metalorganic chemical vapor deposition (MOCVD) epitaxy. The electrical insulating property of…”
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The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor by Meng, Lingyu, Bhuiyan, A F M Anhar Uddin, Zhao, Hongping

“…In this Letter, the role of background carbon in metalorganic chemical vapor deposition (MOCVD) β-Ga2O3 growth using trimethylgallium (TMGa) as the Ga…”
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Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3 by Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, Moore, Wyatt, Chen, Zhaoying, McGlone, Joe F., Daughton, David R., Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, Zhao, Hongping

“…A new record‐high room‐temperature electron Hall mobility (μRT = 194 cm2 V−1 s−1 at n ≈ 8 × 1015 cm−3) for β‐Ga2O3 is demonstrated in the unintentionally doped…”
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β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching by Huang, Hsien-Chih, Ren, Zhongjie, Anhar Uddin Bhuiyan, A F M, Feng, Zixuan, Yang, Zhendong, Luo, Xixi, Huang, Alex Q., Green, Andrew, Chabak, Kelson, Zhao, Hongping, Li, Xiuling

“…In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010)…”
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Vacuum annealed β-Ga2O3 recess channel MOSFETs with 8.56 kV Breakdown Voltage by Sharma, Shivam, Meng, Lingyu, Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Eason, David, Zhao, Hongping, Singisetti, Uttam

“…This letter reports vacuum annealing of lateral field-plated β-Ga 2 O 3 MOSFETs with significant current recovery and improvement in the on-state resistance, R…”
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Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors by Kalarickal, Nidhin Kurian, Feng, Zixuan, Anhar Uddin Bhuiyan, A. F. M., Xia, Zhanbo, Moore, Wyatt, McGlone, Joe F., Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth

“…The performance of ultra-wide bandgap semiconductors like <inline-formula> <tex-math notation="LaTeX">{\beta } </tex-math></inline-formula>-Ga 2 O 3 is…”
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Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux by Kalarickal, Nidhin Kurian, Fiedler, Andreas, Dhara, Sushovan, Huang, Hsien-Lien, Bhuiyan, A F M Anhar Uddin, Rahman, Mohammad Wahidur, Kim, Taeyoung, Xia, Zhanbo, Eddine, Zane Jamal, Dheenan, Ashok, Brenner, Mark, Zhao, Hongping, Hwang, Jinwoo, Rajan, Siddharth

“…In situ etching using Ga flux in an ultra-high vacuum environment like molecular beam epitaxy is introduced as a method to make high aspect ratio…”
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Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 by Ghadi, Hemant, McGlone, Joe F., Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Zhao, Hongping, Arehart, Aaron R., Ringel, Steven A.

“…The influence of growth temperature on the distribution (concentrations and energy levels) of individual defect states in metal organic chemical vapor…”
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Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch by Ren, Zhongjie, Huang, Hsien-Chih, Lee, Hanwool, Chan, Clarence, Roberts, Henry C., Wu, Xihang, Waseem, Aadil, Bhuiyan, A F M Anhar Uddin, Zhao, Hongping, Zhu, Wenjuan, Li, Xiuling

“…Understanding the thermal stability and degradation mechanism of β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial for their…”
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Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy by Mondal, Shubham, Wang, Ding, Anhar Uddin Bhuiyan, A F M, Hu, Mingtao, Reddeppa, Maddaka, Wang, Ping, Zhao, Hongping, Mi, Zetian

“…N-polar AlGaN is an emerging wide-bandgap semiconductor for next-generation high electron mobility transistors and ultraviolet light emitting diodes and…”
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High-Mobility MOCVD β‑Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium by Meng, Lingyu, Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Zhao, Hongping

“…In this work, metalorganic chemical vapor deposition (MOCVD) of (010) β-Ga2O3 with fast growth rates was investigated using trimethylgallium (TMGa) as the…”
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MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping by Anhar Uddin Bhuiyan, A F M, Feng, Zixuan, Johnson, Jared M., Chen, Zhaoying, Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

“…(010) β-(AlxGa1−x)2O3 thin films were grown on (010) β-Ga2O3 substrates via metalorganic chemical vapor deposition with up to 40% Al incorporation by…”
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MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films by Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Meng, Lingyu, Zhao, Hongping

“…In this work, we systematically investigate the effects of growth parameters on the structural and surface morphological properties of β-(Al x Ga 1− x ) 2 O 3…”
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Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX by Saha, Chinmoy Nath, Vaidya, Abhishek, Bhuiyan, A. F. M. Anhar Uddin, Meng, Lingyu, Sharma, Shivam, Zhao, Hongping, Singisetti, Uttam

“…This Letter reports a high performance β-Ga2O3 thin channel MOSFET with T gate and degenerately doped (n++) source/drain contacts regrown by metal organic…”
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Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates by Saha, Sudipto, Meng, Lingyu, Feng, Zixuan, Anhar Uddin Bhuiyan, A. F. M., Zhao, Hongping, Singisetti, Uttam

“…High crystalline quality thick β-Ga2O3 drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is…”
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MOCVD Growth of Thick β‑(Al)GaO Films with Fast Growth Rates by Meng, Lingyu, Bhuiyan, A F M Anhar Uddin, Yu, Dong Su, Huang, Hsien Lien, Hwang, Jinwoo, Zhao, Hongping

“…In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with…”
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High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes by Saha, Sudipto, Meng, Lingyu, Yu, Dong Su, Anhar Uddin Bhuiyan, A. F. M., Zhao, Hongping, Singisetti, Uttam

“…We report on the growth of Si-doped homoepitaxial β-Ga2O3 thin films on (010) Ga2O3 substrates via metal-organic chemical vapor deposition (MOCVD) utilizing…”
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A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1−x)2O3 by Sarker, Jith, Broderick, Scott, Bhuiyan, A. F. M. Anhar Uddin, Feng, Zixuan, Zhao, Hongping, Mazumder, Baishakhi

“…In this paper, we investigated the evolution of microstructural chemistry of metal organic chemical vapor deposition grown (010) (AlxGa1−x)2O3 films with…”
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Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates by Meng, Lingyu, Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

“…Metalorganic chemical vapor deposition (MOCVD) growths of β-Ga2O3 on on-axis (100) Ga2O3 substrates are comprehensively investigated. Key MOCVD growth…”
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