Search Results - "Andronescu, S. N."

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  1. 1

    Pulsed laser deposition and processing of wide band gap semiconductors and related materials by Vispute, R. D., Choopun, S., Enck, R., Patel, A., Talyansky, V., Sharma, R. P., Venkatesan, T., Sarney, W. L., Salamancariba, L., Andronescu, S. N., Iliadis, A. A., Jones, K. A.

    Published in Journal of electronic materials (01-03-1999)
    “…The present work describes the novel, relatively simple, and efficient technique of pulsed laser deposition for rapid prototyping of thin films and multi-layer…”
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    Journal Article
  2. 2

    Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition by Iliadis, A. A., Andronescu, S. N., Yang, W., Vispute, R. D., Stanishevsky, A., Orloff, J. H., Sharma, R. P., Venkatesan, T., Wood, M. C., Jones, K. A.

    Published in Journal of electronic materials (01-03-1999)
    “…Low resistance Pt and W ohmic metallizations to p-type 6H-SiC, using focused ion beam (FIB) surface-modification and in-situ direct-write metal deposition…”
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    Journal Article
  3. 3

    Ohmic contacts to p-6H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition by Iliadis, A. A., Andronescu, S. N., Edinger, K., Orloff, J. H., Vispute, R. D., Talyansky, V., Sharma, R. P., Venkatesan, T., Wood, M. C., Jones, K. A.

    Published in Applied physics letters (14-12-1998)
    “…The development of low-resistance Ohmic metallizations to p-type 6H–SiC, using a focused ion-beam (FIB)-Ga surface-modification and ex situ pulsed laser (PLD)…”
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    Journal Article
  4. 4

    Focused ion beam assisted ohmic metallizations to p-6H-SiC by Iliadis, A.A., Androneseu, S.N., Talyansky, V., Edinger, K., Orloff, J.H., Woods, M.C., Jones, K.A.

    “…This work deals with the development of high temperature, low resistance ohmic metallizations to p-type 6H-SiC, using a novel approach of focused ion beam…”
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    Conference Proceeding