Search Results - "Andreev, A.N."
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Test and Analysis of Technology Quadrupole Shell (TQS) Magnet Models for LARP
Published in IEEE transactions on applied superconductivity (01-06-2008)“…Test results are reported on four quadrupole magnet model tests (TQS01a, TQS01b, TQS01c, TQS02) in support of the development of a large-aperture…”
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2
Prevention of corneal complications after post-operative application of antimetabolites following nonpenetrating deep sclerectomy
Published in Oftalʼmokhirurgii͡a︡ = Ophthalmosurgery (18-03-2024)“…Original article Prevention of corneal complications after post-operative application of antimetabolites following nonpenetrating deep sclerectomy S.N…”
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3
The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-04-1997)“…Nickel-based Schottky contacts to n-6H-SiC, subjected to various heat treatments, have been studied by the capacitancevoltage technique, X-ray diffractometry…”
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4
Anterior stromal micropuncture for the treatment of persistent corneal epithelial graft defects after penetrating keratoplasty
Published in Vestnik oftal'mologii (2021)“…Persistent corneal graft erosion or persistent epithelial corneal defect is a frequent complication of penetrating keratoplasty. Its development can be…”
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5
Increasing the Energy Efficiency of the Cyclic Action Mechanisms in Rolling for a Roller Bed Used as an Example
Published in Russian metallurgy Metally (01-12-2017)“…The possibility of increasing the energy efficiency of the production cycle in a roller bed is briefly reviewed and justified. The sequence diagram of…”
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6
Surface barrier height in metal-n-6H-SiC structures
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)“…This work makes a comparison of some experimental data on surface barrier height with calculations based on classical models of surface barrier formation in…”
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7
Test and Analysis of 4 Technology Quadrupole Shell (TQS) models for LARP
Published in IEEE transactions on applied superconductivity (01-06-2008)“…Test results are reported on TQS02a, a second model in support of the development of a large-aperture Nb{sub 3}Sn superconducting quadrupole for the US LHC…”
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8
Fabrication and Test of TQS01--A 90 mm 3 Quadrupole Magnet for LARP
Published in IEEE transactions on applied superconductivity (01-05-2007)Get full text
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9
Fabrication and Test of TQS01-A 90 mm Quadrupole Magnet for LARP
Published in IEEE transactions on applied superconductivity (01-06-2007)“…In support of the development of a large-aperture Nb 3 Sn superconducting quadrupole for the Large Hadron Collider luminosity upgrade, two models (TQS and TQC)…”
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10
Influence of proton irradiation on recombination current in 6H–SiC pn structures
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30-07-1999)“…The effect of proton bombardment on recombination current and the value of the steady state lifetime of nonequilibrium carriers for 6H–SiC pn structures…”
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11
Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrates by vacuum sublimation
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-04-1997)“…We report on the influence of the surface quality of substrate, growth rate and vapour phase composition in the growth cell on, both, the size of double…”
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12
Input Signal Profile Influence on Output Spectra of Running Wave Amplifying Interferometer for Terahertz Spectroscopy
Published in 2006 International Workshop on Laser and Fiber-Optical Networks Modeling (01-06-2006)“…The influence of the input signal temporal profile on output spectra of running wave amplifying interferometer (RWAI) is studied by mathematical modeling with…”
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13
Properties and technology of sputtering of yttrium iron garnet films for spin-wave electronics
Published in 2008 18th International Crimean Conference - Microwave & Telecommunication Technology (01-09-2008)“…Deposition of yttrium iron garnet films produced by magnetron sputtering are considered. The main consideration is paid to technology methods to obtain…”
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14
High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)“…Voltage stabilitrons based on 6H-SiC p-n structures produced by the open-system sublimation technique have been fabricated. Stabilization voltages were in the…”
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15
High temperature 6H-SiC dinistor
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)“…6H-SiC dinistors based on epitaxial layers grown by sublimation epitaxy were fabricated. Parameters of these devices were studied at the temperatures 500–800 K…”
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Angle of synchronism naturally tuning device for CARS stimulation by signal of parametric generator
“…In this paper the evaluation of correspondence of angle of synchronism naturally tuning device for CARS stimulation by signal of parametric generator is…”
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17
Signal modulation for correlation spectroscopy of polydisperse systems
Published in Proceedings of CAOL 2005. Second International Conference on Advanced Optoelectronics and Lasers, 2005 (2005)“…In correlation spectroscopy or dynamic (DLS) of polydisperse systems too much depends on a-priori information about the system properties. By changing the…”
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18
High frequency light self-modulation in simple interference scheme
Published in 6th International Conference on Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004 (2004)“…The coherent light self-modulation process was studied by modeling the simplest interference scheme containing beam splitting, delaying and amplifying…”
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19
Power silicon carbide devices based on Lely grown substrates
Published in Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 (1995)“…This paper presents some experimental data relating to SiC devices based on substrates grown by the Lely method. These devices were developed on p- and n-type…”
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20
Study of Ni-based ohmic contacts fabricated on n-6H-SiC polar faces
Published in 1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) (1998)“…Electrical characteristics and composition of interface region were studied for Ni-based ohmic contacts prepared on the n-6H-SiC polar faces at the various…”
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Conference Proceeding