Search Results - "Andreev, A.D"

Theory of GaN Quantum Dots for Optical Applications by Williams, D.P., Schulz, S., Andreev, A.D., O'Reilly, E.P.

“…The optical properties of III-N wurtzite heterostructures are dominated by the built-in polarization potential. We first review the dependence of III-N bulk…”
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Theoretical analysis of the electronic structure of truncated-pyramidal GaN/AlN quantum dots by Andreev, A.D., O'Reilly, E.P.

“…We present a theoretical analysis of the electronic structure of GaN/AlN quantum dots (QD) with a hexagonal, truncated-pyramidal shape. We use a…”
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The effects of adjacent dislocations on the electronic and optical properties of GaN/AlN quantum dots by Andreev, A.D, Downes, J.R, O'Reilly, E.P

“…We present a theory of the electronic energy levels and wave functions within GaN quantum dots (QDs), including the effect of the strain field of a nearby…”
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Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers by Tomic, S., O'Reilly, E.P., Fehse, R., Sweeney, S.J., Adams, A.R., Andreev, A.D., Choulis, S.A., Hosea, T.J.C., Riechert, H.

“…We present a comprehensive theoretical and experimental analysis of 1.3- mu m InGaAsN/GaAs lasers. After introducing the 10-band k . p Hamiltonian which…”
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Mode conversion in a magnetron with axial extraction of radiation by Fuks, M.I., Kovalev, N.F., Andreev, A.D., Schamiloglu, E.

“…We demonstrate the ability to form simple radiation patterns from a relativistic magnetron with axial extraction. This is achieved by tapering onto a conical…”
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The Mechanism of Action of Ethoxidol on Oxidative Stress Indices in Heart Failure and Hypotension by Kukes, V G, Parfenova, O K, Romanov, B K, Prokofiev, A B, Parfenova, E V, Sidorov, N G, Gazdanova, A A, Pavlova, L I, Zozina, V I, Andreev, A D, Aleksandrova, T V, Chernova, S V, Ramenskaya, G V

“…was to study the effect of 2-ethyl-6-methyl-3-hydroxypyridine malate (Ethoxidol) on the concentration of oxidative stress metabolites in patients with chronic…”
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Self-consistent calculations of exciton, biexciton and charged exciton energies in InGaN/GaN quantum dots by Williams, D.P., Andreev, A.D., O’Reilly, E.P.

“…We present theoretical calculations of the variation of exciton energies in truncated conical InGaN quantum dots (QDs) in a GaN matrix with dot size and indium…”
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The Importance of Recombination via Excited States in InAs/GaAs [Formula Omitted]m Quantum-Dot Lasers by Crowley, M.T, Marko, I.P, Masse, N.F, Andreev, A.D, Tomic, S, Sweeney, S.J, O'Reilly, E.P, Adams, A.R

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The Importance of Recombination via Excited States in InAs/GaAs $\hbox{1.3}\;\mu$m Quantum-Dot Lasers by Crowley, M.T., Marko, I.P., Masse, N.F., Andreev, A.D., Tomic, S., Sweeney, S.J., O'Reilly, E.P., Adams, A.R.

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The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure by Marko, I.P., Andreev, A.D., Adams, A.R., Krebs, R., Reithmaier, J.P., Forchel, A.

“…InAs quantum-dot (QD) lasers were investigated in the temperature range 20-300 K and under hydrostatic pressure in the range of 0-12 kbar at room temperature…”
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Measurement of I-V characteristic of short-pulse (10-15ns) electron beam by Andreev, A.D., Schamiloglu, E.

“…Summary form only given. It has been experimentally demonstrated that the current voltage characteristic of a short-pulse electron beam (when the electron beam…”
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The Importance of Recombination via Excited States in InAs/GaAs \hbox\;\mum Quantum-Dot Lasers by Crowley, M.T., Marko, I.P., Masse, N.F., Andreev, A.D., Tomic, S., Sweeney, S.J., O'Reilly, E.P., Adams, A.R.

“…The temperature dependence of the radiative and nonradiative components of the threshold current density of 1.3 mum InAs/GaAs quantum-dot lasers have been…”
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The role of Auger recombination in InAs 1.3-/spl mu/m quantum-dot lasers investigated using high hydrostatic pressure by Marko, I.P., Andreev, A.D., Adams, A.R., Krebs, R., Reithmaier, J.P., Forchel, A.

“…InAs quantum-dot (QD) lasers were investigated in the temperature range 20-300 K and under hydrostatic pressure in the range of 0-12 kbar at room temperature…”
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The role of Auger recombination in InAs 1.3-[micro]m quantum-dot lasers investigated using high hydrostatic pressure by Marko, I.P, Andreev, A.D, Adams, A.R, Krebs, R, Reithmaier, J.P, chel, A

“…The results are discussed in the framework of a theoretical model based on the electronic structure and radiative recombination calculations carried out using…”
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Simulation of Anode Material Erosion in the Internal Environment of HPM Devices by Andreev, A.D., Bosman, H., Schamiloglu, E.

“…Summary form only given. The internal environment of a high-vacuum HPM source is subjected to intense electron flow impact resulting in possible rapid erosion…”
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Theoretical and experimental analysis of 1.3-[micro]m InGaAsN/GaAs lasers by Tomic, S, O'Reilly, E.P, Fehse, R, Sweeney, S.J, Adams, A.R, Andreev, A.D, Choulis, S.A, Hosea, T.J.C, Riechert, H

“…Elimination of these losses would enable laser characteristics comparable with the best InGaAsP/InP-based lasers with the added advantages provided by the GaAs…”
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Theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers by Tomic, S., O'Reilly, E.P., Fehse, R., Sweeney, S.J., Adams, A.R., Andreev, A.D., Choulis, S.A., Hosea, T.J.C., Riechert, H.

“…We present a comprehensive theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers. After introducing the 10-band k /spl middot/ p…”
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Surface integral determination of built-in electric fields and analysis of exciton binding energies in nitride-based quantum dots by Williams, D.P, Andreev, A.D, Faux, D.A, O'Reilly, E.P

“…We present a simple analytical approach to calculate the built-in strain-induced and spontaneous piezoelectric fields in nitride-based quantum dots (QDs) and…”
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Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots by Zibik, E.A., Andreev, A.D., Wilson, L.R., Steer, M.J., Green, R.P., Ng, W.H., Cockburn, J.W., Skolnick, M.S., Hopkinson, M.

“…We present a comprehensive study of the intraband transitions in n-type InAs/GaAs quantum dots (QDs) with a filling varying from 0.5 to 4 electrons per dot,…”
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Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs by Andreev, A.D, O'Reilly, E.P

“…We present a theoretical analysis of the gain characteristics of InGaN /AlGaN quantum dot (QD) lasers. We calculate the elastic strain and piezoelectric filed…”
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