Search Results - "Ancona, M. G."

Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors by Ancona, M. G., Cooke, S. J.

“…Macroscopically non-local effects are common in electron transport in semiconductor devices, occurring whenever the mean free path and/or the deBroglie…”
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Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices by Ancona, M. G.

“…Density-gradient theory provides a macroscopic approach to modeling quantum transport that is particularly well adapted to semiconductor device analysis and…”
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High-mobility carbon-nanotube thin-film transistors on a polymeric substrate by Snow, E. S., Campbell, P. M., Ancona, M. G., Novak, J. P.

“…We report the development of high-mobility carbon-nanotube thin-film transistors fabricated on a polymeric substrate. The active semiconducting channel in the…”
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Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study by Ancona, M. G., Calame, J. P., Meyer, D. J., Rajan, S., Downey, B. P.

“…As is well known, a roadblock to realizing the full potential of GaN high-electron mobility transistors (HEMTs) for power amplifier applications is the peaked…”
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Scaling projections for Sb-based p-channel FETs by Ancona, M.G., Bennett, B.R., Boos, J.B.

“…Numerical device modeling is used to study p-channel FETs with InSb, GaSb and InGaSb channels. To be as realistic as possible, the basic parameters are chosen…”
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Selective DNA-Mediated Assembly of Gold Nanoparticles on Electroded Substrates by Sapsford, K. E, Park, D, Goldman, E. R, Foos, E. E, Trammell, S. A, Lowy, D. A, Ancona, M. G

“…Motivated by the technological possibilities of electronics and sensors based on gold nanoparticles (Au NPs), we investigate the selective assembly of such NPs…”
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Nonlinear Thermoelectroelastic Analysis of III-N Semiconductor Devices by Ancona, M. G.

“…The diffusion-drift electron transport description is combined with finite deformation theory to model thermoelectroelastic behaviors in piezoelectric…”
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Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices by Saks, N. S., Ancona, M. G., Rendell, R. W.

“…A technique is presented for measuring the density of interface traps versus energy DIT(E) using the Hall effect in metal-oxide-semiconductor samples. Good…”
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Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers by Mahadik, Nadeemullah A., Stahlbush, Robert E., Ancona, M. G., Imhoff, Eugene A., Hobart, Karl D., Myers-Ward, Rachael L., Eddy, Charles R., Kurt Gaskill, D., Kub, Fritz J.

“…Stacking fault (SF) expansion from basal plane dislocations (BPDs) confined in highly doped 4H-SiC buffer layers is observed under high-power ultraviolet…”
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Enhanced plasmon coupling in crossed dielectric/metal nanowire composite geometries and applications to surface-enhanced Raman spectroscopy by Prokes, S. M., Glembocki, O. J., Rendell, R. W., Ancona, M. G.

“…Surface-enhanced Raman spectroscopy (SERS) was performed on Ga2O3∕Ag and ZnO∕Ag nanowires, which were arranged in either a crossover or noncrossing geometry…”
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Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling by Ancona, M. G, Kooi, S. E, Kruppa, W, Snow, A. W, Foos, E. E, Whitman, L. J, Park, D, Shirey, L

“…A shadow mask technique employing V2O5 nanowires and ion-beam milling is used to define narrow lines of monolayer-encapsulated Au nanoclusters. When positioned…”
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Analyte kinetics in a nanocluster-based chemiresistor: A case study by Ancona, M.G., Snow, A.W., Perkins, F.K., Pate, B., Park, D.

“…Nanoparticulate metal–insulator–metal ensemble chemiresistors in which the Au nanoclusters are functionalized with mercaptohexanoic acid are investigated as…”
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Electron transport in nanocluster films with random voids by Rendell, R.W., Ancona, M.G., Kruppa, W., Foos, E.E., Snow, A.W., Park, D., Boos, J.B.

“…Nanocluster films are modeled as a network of tunnel junctions in which random voids have been introduced. The effects of network size and void distribution on…”
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Diffusion-drift modeling of carbon-based nanowire FETs by Ancona, M. G., Boos, J. B.

“…Continuum models of transport in carbon nanotubes and graphene nanoribbons are created by treating the charge flow in the carbon layers in a 2D diffusion-drift…”
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Coupled 2D/3D transport: Analysis of graphene-SiC devices by Ancona, M. G., Hobart, K. D., Anderson, T. J.

“…Macroscopic equations are discussed that describe carrier transport in situations in which an ordinary 3D semiconductor is coupled to a 2D material like…”
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Modeling cyclic voltammetry of electrode-immobilized gold nanoclusters by Ancona, M.G., Jhaveri, S.D., Lowy, D.A., Tender, L.M., Foos, E.E., Snow, A.W.

“…The interaction that occurs between a supporting electrolyte and electrode-immobilized gold nanoclusters (GNCs) in voltammetric experiments is modeled with…”
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Modeling of Ge segregation in the limits of zero and infinite surface diffusion by Godbey, D. J., Ancona, M. G.

“…A model to treat Ge segregation with simultaneous growth and exchange during Si/SiGe layer growth by molecular beam epitaxy is described. Within this three…”
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A 475-V high-voltage 6H-SiC lateral MOSFET by Saks, N.S., Mani, S.S., Agarwal, A.K., Ancona, M.G.

“…High-voltage lateral MOSFET's on 6H- and 4H-SiC have been fabricated with 400-475 V breakdown voltage using the RESURF principle. An MOS electron inversion…”
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Analysis of Ge segregation in Si using a simultaneous growth and exchange model by Godbey, D.J, Ancona, M.G

“…Ge segregation data is analyzed using a simultaneous growth and exchange model in the limit of infinite surface diffusion. This model is found to predict a…”
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Ge profile from the growth of SiGe buried layers by molecular beam epitaxy by GODBEY, D.J, ANCONA, M. G

“…X-ray photoelectron spectroscopy measurements were obtained and interpreted by a kinetic simulation to determine the germanium concentration profile of thin…”
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