AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked AlxGa1−xN layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m−1 K−1,...

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Bibliographic Details
Published in:Applied physics letters Vol. 103; no. 20
Main Authors: Hodges, C., Anaya Calvo, J., Stoffels, S., Marcon, D., Kuball, M.
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 11-11-2013
Subjects:
Aluminum gallium nitrides
Applied physics
Channels
Computer simulation
Devices
Electric power generation
Electrical resistivity
Electronic devices
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
Heat conductivity
Heat transfer
Heterostructures
LAYERS
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
Semiconductor devices
SIMULATION
THERMAL CONDUCTIVITY
Thermal simulation
THERMOGRAPHY
THICKNESS
Thin films
Transistors
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Summary:AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked AlxGa1−xN layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m−1 K−1, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4831688