Search Results - "Anand, Sunny"

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  1. 1

    Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor by Apoorva, Kumar, Naveen, Amin, S. Intekhab, Anand, Sunny

    Published in IET circuits, devices & systems (01-10-2021)
    “…Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate…”
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    Journal Article
  2. 2

    Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier by Singh, Sarabdeep, Solay, Leo Raj, Anand, Sunny, Kumar, Naveen, Ranjan, Ravi, Singh, Amandeep

    Published in Micromachines (Basel) (30-06-2023)
    “…This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the…”
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    Journal Article
  3. 3

    Systematic review of existing literature regarding the prevalence of pediatric atopic dermatitis in Honduras by Patrick, Genevieve, Mattia, Alexzandra, Melchor, Julian, Leonard, Madison, Quirindongo, Ernest, Sangha, Nicole, Long, Brittany, Grant, Nicole, Cruz, Victoria, Narayanan, AnandSunny, Chang, Meihmy, Fleischer, Charles

    Published in JAAD international (01-06-2024)
    “…Atopic dermatitis (AD) is an inflammatory skin condition, often multifactorial in origin, and most commonly manifests during childhood. Although there remains…”
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    Journal Article
  4. 4

    Design and Analysis of Gate Engineered Dual Material Gate Double Gate Impact Ionization Metal Oxide Semiconductor by Solay, Leo Raj, Singh, Sarabdeep, Amin, S. Intekhab, Anand, Sunny

    “…In this exposition, we have proposed the Dual Material Gate Double Gate Impact Ionization Metal Oxide Semiconductor (DMG DG IMOS) device with a gate engineered…”
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    Journal Article
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    Design and Performance Analysis of Tunnel Field Effect Transistor With Buried Strained Si1−xGex Source Structure Based Biosensor for Sensitivity Enhancement by Anam, Aadil, Anand, Sunny, Amin, S. Intekhab

    Published in IEEE sensors journal (15-11-2020)
    “…In this paper, a dielectrically modulated symmetrical double gate, having dual gate material, Tunnel Field-Effect transistor with Buried strained Si 1- x Ge x…”
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    Journal Article
  8. 8

    Design and Performance Analysis of Dielectrically Modulated Doping-Less Tunnel FET-Based Label Free Biosensor by Anand, Sunny, Singh, Amrita, Amin, S. Intekhab, Thool, Asmita S.

    Published in IEEE sensors journal (15-06-2019)
    “…In this paper, we have proposed a charge plasma-based doping less double gated tunnel FET (DLDGTFET)-based biosensor using dielectric modulation with a cavity…”
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    Journal Article
  9. 9

    Design and Performance Optimization of Novel Core-Shell Dopingless GAA-Nanotube TFET With Si0.5Ge0.5-Based Source by Apoorva, Kumar, Naveen, Amin, S. Intekhab, Anand, Sunny

    Published in IEEE transactions on electron devices (01-03-2020)
    “…In this article, two nanotube structures have been proposed: namely, core-shell dopingless nanotube tunnel field effect transistor (CS-DL-NT-TFET) and Si 0.5…”
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    Journal Article
  10. 10

    Design and Performance Analysis of a GAA Electrostatic Doped Negative Capacitance Vertical Nanowire Tunnel FET by Bhardwaj, Anjana, Kumar, Pradeep, Raj, Balwinder, Anand, Sunny

    Published in Journal of electronic materials (01-05-2023)
    “…An electrostatic doped vertical gate-all-around nanowire tunnel field effect transistor (ED-V-GAA-NW-NC-TFET) is proposed with negative capacitance for…”
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    Journal Article
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    Design and Performance Optimization of Dopingless Vertical Nanowire TFET Using Gate Stacking Technique by Bhardwaj, Anjana, Kumar, Pradeep, Raj, Balwinder, Anand, Sunny

    Published in Journal of electronic materials (01-07-2022)
    “…This paper focuses on the impact of gate stacking (SiO 2 +HfO 2 ) on dopingless vertical nanowire TFET (designed with gate-on-source technique) with an…”
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    Journal Article
  13. 13

    Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation by Anam, Aadil, Amin, S Intekhab, Prasad, Dinesh, Kumar, Naveen, Anand, Sunny

    Published in Physica scripta (01-09-2023)
    “…In this paper, a charge plasma-based inverted T-shaped source-metal dual line-tunneling field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve…”
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    Journal Article
  14. 14

    Design and Performance Analysis of Tunnel Field Effect Transistor With Buried Strained Si1− x Ge x Source Structure Based Biosensor for Sensitivity Enhancement by Aadil Anam, Anand, Sunny, Amin, S Intekhab

    Published in IEEE sensors journal (01-01-2020)
    “…In this paper, a dielectrically modulated symmetrical double gate, having dual gate material, Tunnel Field-Effect transistor with Buried strained Si1- x Ge x…”
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    Journal Article
  15. 15

    Label Free Detection of Biomolecules Using SiGe Sourced Dual Electrode Doping-Less Dielectrically Modulated Tunnel FET by Singh, Amrita, Amin, S. Intekhab, Anand, Sunny

    Published in SILICON (01-10-2020)
    “…In this work, the performance of a Si 0.5 Ge 0.5 sourced dual electrode doping-less Tunnel FET (DEDLTFET) biosensor using dielectric modulation is studied for…”
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    Journal Article
  16. 16

    Core-Shell Junctionless Nanotube Tunnel Field Effect Transistor: Design and Sensitivity Analysis for Biosensing Application by Shreya, Shruti, Khan, Adnan Hamid, Kumar, Naveen, Amin, S. Intekhab, Anand, Sunny

    Published in IEEE sensors journal (15-01-2020)
    “…In this paper, the structure of Core-Shell Junctionless Nanotube Tunnel Field Effect Transistor is proposed and investigated to minimize the fabrication steps…”
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    Journal Article
  17. 17

    Analysis of dielectrically modulated doping-less transistor for biomolecule detection using the charge plasma technique by Amin, S. Intekhab, Gajal, Lubna, Anand, Sunny

    “…This paper represents the electrical properties such as threshold voltage, drain current, etc., of charge plasma-based doping-less transistor for the detection…”
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    Journal Article
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    Effect of ambipolarity suppression in PNPN TFET with dopant segregated Schottky-drain technique by Anam, Aadil, Amin, S. Intekhab, Prasad, Dinesh, Kumar, Naveen, Anand, Sunny

    Published in Microelectronics (01-03-2024)
    “…In this paper, a comparative analysis of ambipolarity suppression in conventional PNPN-TFET(D-1) is studied using TCAD simulation. By replacing the drain with…”
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    Journal Article
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    Gate misalignment effects on analog/RF performance of charge plasma-based doping-less tunnel FET by Anand, Sunny, Sarin, R. K.

    “…In this paper, gate misalignment effect on charge plasma-based doping-less tunnel FET (DLTFET) is demonstrated for the first time. The effects of bottom gate…”
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    Journal Article