Search Results - "An-Jye Tzou"

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration by Hsu, Lung-Hsing, Lai, Yung-Yu, Tu, Po-Tsung, Langpoklakpam, Catherine, Chang, Ya-Ting, Huang, Yu-Wen, Lee, Wen-Chung, Tzou, An-Jye, Cheng, Yuh-Jen, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi

“…GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices…”
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The Evolution of Manufacturing Technology for GaN Electronic Devices by Liu, An-Chen, Tu, Po-Tsung, Langpoklakpam, Catherine, Huang, Yu-Wen, Chang, Ya-Ting, Tzou, An-Jye, Hsu, Lung-Hsing, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi

“…GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation…”
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Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure by Ho, Shin-Yi, Lee, Chun-Hsun, Tzou, An-Jye, Kuo, Hao-Chung, Wu, Yuh-Renn, Huang, JianJang

“…Current collapse is a phenomenon that increases the channel resistance during the switching process when the high gate and drain voltages are applied. The…”
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AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition by Tzou, An-Jye, Chu, Kuo-Hsiung, Lin, I-Feng, Østreng, Erik, Fang, Yung-Sheng, Wu, Xiao-Peng, Wu, Bo-Wei, Shen, Chang-Hong, Shieh, Jia-Ming, Yeh, Wen-Kuan, Chang, Chun-Yen, Kuo, Hao-Chung

“…We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2…”
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Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS2 Photodetector by Lai, Yung-Yu, Yeh, Yen-Wei, Tzou, An-Jye, Chen, Yi-Yuan, Wu, YewChung Sermon, Cheng, Yuh-Jen, Kuo, Hao-Chung

“…Non-radiative energy transfer (NRET) from quantum dots (QDs) to monolayer MoS2 has been shown to greatly enhance the photoresponsivity of the MoS2…”
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High-Efficiency InGaN/GaN Core–Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop by Tzou, An-Jye, Hsieh, Dan-Hua, Hong, Kuo-Bin, Lin, Da-Wei, Huang, Jhih-Kai, Chen, Tzu-Pei, Kao, Tsung-Sheng, Chen, Yang-Fang, Lu, Tien-Chang, Chen, Chyong-Hua, Kuo, Hao-Chung, Chang, Chun-Yen

“…In this study, novel three-dimensional (3-D) nanoscale structures and methodology are demonstrated for application in high-efficiency core-shell nanorod (NR)…”
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Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system by Chen, Meei-Ru, Chen, Hou-Guang, Kao, Hui-Ling, Wu, Ming-Guei, Tzou, An-Jye, Chen, Jyh Shin, Chou, Hsiung

“…AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN…”
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Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions by Cheng, Chih-Hsien, Tzou, An-Jye, Chang, Jung-Hung, Chi, Yu-Chieh, Lin, Yung-Hsiang, Shih, Min-Hsiung, Lee, Chao-Kuei, Wu, Chih-I, Kuo, Hao-Chung, Chang, Chun-Yen, Lin, Gong-Ru

“…The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-Si x C 1−x ) buffer is demonstrated. The a-Si x C…”
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Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition by Liao, Yu-Kuang, Liu, Yung-Tsung, Hsieh, Dan-Hua, Shen, Tien-Lin, Hsieh, Ming-Yang, Tzou, An-Jye, Chen, Shih-Chen, Tsai, Yu-Lin, Lin, Wei-Sheng, Chan, Sheng-Wen, Shen, Yen-Ping, Cheng, Shun-Jen, Chen, Chyong-Hua, Wu, Kaung-Hsiung, Chen, Hao-Ming, Kuo, Shou-Yi, Charlton, Martin D B, Hsieh, Tung-Po, Kuo, Hao-Chung

“…Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on…”
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Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography by Wang, Sheng-Wen, Hong, Kuo-Bin, Tsai, Yu-Lin, Teng, Chu-Hsiang, Tzou, An-Jye, Chu, You-Chen, Lee, Po-Tsung, Ku, Pei-Cheng, Lin, Chien-Chung, Kuo, Hao-Chung

“…In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere…”
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High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer by Tzou, An-Jye, Lin, Da-Wei, Yu, Chien-Rong, Li, Zhen-Yu, Liao, Yu-Kuang, Lin, Bing-Cheng, Huang, Jhih-Kai, Lin, Chien-Chung, Kao, Tsung Sheng, Kuo, Hao-Chung, Chang, Chun-Yen

“…In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL)…”
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Substrate Bias Effect on Dynamic Characteristics of a Monolithically Integrated GaN Half-Bridge by Yang, Wen, Yuan, Jiann-Shiun, Krishnan, Balakrishnan, Tzou, An-Jye, Yeh, Wen-Kuan

“…This paper investigates the substrate bias effects on a monolithically integrated half-bridge fabricated using lateral GaN-on-Si technology. The dynamic…”
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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate by Lee, Chia-Yu, Tzou, An-Jye, Lin, Bing-Cheng, Lan, Yu-Pin, Chiu, Ching-Hsueh, Chi, Gou-Chung, Chen, Chi-Hsiang, Kuo, Hao-Chung, Lin, Ray-Ming, Chang, Chun-Yen

“…The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN…”
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Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dots by Lee, Ling, Fan, Wen-Chung, Chien, Kun-Feng, Tzou, An-Jye, Chou, Wu-Ching

“…The growth evolution and the magneto-optical characteristics of the self-assembled single-layer ZnTe/ZnMnSe quantum dots grown by molecular beam epitaxy were…”
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Optical and Magnetic Properties of Zn1-xMnxO Grown by Plasma-Assisted Molecular Beam Epitaxy by WU CHING CHOU, TZOU, An-Jye, CHEN, Hsuan-Shao, CHIEN, Kun-Feng, FAN, Wen-Chung, YANG, Chu-Shou, CHEN, Meei-Ru, KAO, Hui-Ling, JENG, Syang-Ywan, LUC HUY HOANG

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Optical and Magnetic Properties of Grown by Plasma-Assisted Molecular Beam Epitaxy by Chou, Wu Ching, Tzou, An-Jye, Chen, Hsuan-Shao, Chien, Kun-Feng, Fan, Wen-Chung, Yang, Chu-Shou, Chen, Meei-Ru, Kao, Hui-Ling, Jeng, Syang-Ywan, Hoang, Luc Huy

“…Zn 1-x Mn x O films (0 ≤ ×≤ 0.070) were grown by plasma-assisted molecular beam epitaxy on Si substrates with AlN buffer layers. For low Mn concentration…”
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Wavelength tuning in InGaN/GaN light-emitting diodes with strain-induced through nanosphere lithography by Sung-Wen Huang Chen, Sheng-Wen Wang, Kuo-Bin Hong, Yu-Lin Tsai, An-Jye Tzou, You-Chen Chu, Po-Tsung Lee, Chien-Chung Lin, Hao-Chung Kuo

“…Nano-ring light emitting diodes with different wall width shows that the effective bandgap can be tuned by reducing the strain. This research successful to…”
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Greatly improved efficiency droop for InGaN-based green light emitting diodes by quaternary content superlattice electron blocking layer by Da-Wei Lin, An-Jye Tzou, Jhih-Kai Huang, Bing-Cheng Lin, Chun-Yen Chang, Hao-Chung Kuo

“…We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer…”
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Greatly improved carrier injection in GaN-based VCSEL by multiple quantum barrier electron blocking layer by Dan-Hua Hsieh, An-Jye Tzou, Da-Wei Lin, Tsung-Sheng Kao, Chien-Chung Lin, Chun-Yen Chang, Hao-Chung Kuo

“…In this report, the fabrication and characteristics of III-nitride based vertical-cavity surface-emitting laser (VCSEL) with bulk AlGaN and AlGaN/GaN…”
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Novel Hybrid Micro Light-Emitting Diodes with Increasing Color-Conversion Technical by Non-Radiative Energy Transfer by Chen, Sung-Wen Huang, Liao, Zhen-You, Chen, Yi-Yuan, Lin, Tzu-Neng, Lee, Po-Tsung, Tzou, An-Jye, Kuo, Hao-Chung

“…Hybrid quantum dots μ-LEDs promise a high color-conversion efficiency regarding the non-radiative energy transfer effect. The new approach enables a novel…”
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