Search Results - "An, Youngseo"

Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlO x ) Dielectrics on In0.53Ga0.47As by Mahata, Chandreswar, Byun, Young-Chul, An, Chee-Hong, Choi, Sungho, An, Youngseo, Kim, Hyoungsub

“…The high-k gate dielectric structures in stacked (HfO2/Al2O3) and nanolaminated (HfAlO x ) forms with a similar apparent accumulation capacitance were…”
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Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition by Byun, Young-Chul, Choi, Sungho, An, Youngseo, McIntyre, Paul C, Kim, Hyoungsub

“…We investigated ZnO surface passivation of a GaAs (100) substrate using an atomic layer deposition (ALD) process to prepare an ultrathin ZnO layer prior to…”
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Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition by Baik, Min, Kang, Hang-Kyu, Kang, Yu-Seon, Jeong, Kwang-Sik, An, Youngseo, Choi, Seongheum, Kim, Hyoungsub, Song, Jin-Dong, Cho, Mann-Ho

“…Changes in the electrical properties and thermal stability of HfO 2 grown on Al 2 O 3 -passivated InSb by atomic layer deposition (ALD) were investigated. The…”
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Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates by Kang, Hang-Kyu, Kang, Yu-Seon, Kim, Dae-Kyoung, Baik, Min, Song, Jin-Dong, An, Youngseo, Kim, Hyoungsub, Cho, Mann-Ho

“…The passivation effect of an Al2O3 layer on the electrical properties was investigated in HfO2–Al2O3 laminate structures grown on indium phosphide (InP)…”
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Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability by Kang, Yu-Seon, Kang, Hang-Kyu, Kim, Dae-Kyoung, Jeong, Kwang-Sik, Baik, Min, An, Youngseo, Kim, Hyoungsub, Song, Jin-Dong, Cho, Mann-Ho

“…We report on changes in the structural, interfacial, and electrical characteristics of sub-1 nm equivalent oxide thickness (EOT) HfO2 grown on InAs by atomic…”
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Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities by Hwang, Byungil, An, Youngseo, Lee, Hyangsook, Lee, Eunha, Becker, Stefan, Kim, Yong-Hoon, Kim, Hyoungsub

“…There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and…”
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Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems by Mahata, Chandreswar, Lee, Changmin, An, Youngseo, Kim, Min-Hwi, Bang, Suhyun, Kim, Chae Soo, Ryu, Ji-Ho, Kim, Sungjun, Kim, Hyoungsub, Park, Byung-Gook

“…This work reports on the bipolar resistive switching (RS) characteristics and possible applicability to transparent synaptic devices when an ultrathin Al2O3…”
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Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy by Choi, Yoon-Ho, Kwon, Gi-Hyeon, Jeong, Jae-Hun, Jeong, Kwang-Sik, Kwon, Hyeokjae, An, Youngseo, Kim, Minju, Kim, Hyoungsub, Yi, Yeonjin, Im, Seongil, Cho, Mann-Ho

“…The transition metal dichalcogenides (TMDs) have great optical absorption and mobility in a subnanometer thickness. The MoSe2 among TMDs is significantly…”
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Electrical properties of HfO2/Al2O3 dielectrics fabricated on In0.53Ga0.47As by using atomic layer deposition at low temperatures (100 - 200 ◦C) by Choi, Sungho, Song, Jeongkeun, An, Youngseo, Lee, Changmin, Kim, Hyoungsub

“…The electrical properties of HfO 2 /Al 2 O 3 stacked dielectrics on n -type In 0.53 Ga 0.47 As were investigated as a function of the atomic layer deposition…”
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Correction to Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition by Byun, Young-Chul, Choi, Sungho, An, Youngseo, McIntyre, Paul C, Kim, Hyoungsub

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Correction to Tailoring the Interface Quality between HfO 2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition by Byun, Young-Chul, Choi, Sungho, An, Youngseo, McIntyre, Paul C., Kim, Hyoungsub

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Al 2 O 3 Passivation Effect in HfO 2 ·Al 2 O 3 Laminate Structures Grown on InP Substrates by Kang, Hang-Kyu, Kang, Yu-Seon, Kim, Dae-Kyoung, Baik, Min, Song, Jin-Dong, An, Youngseo, Kim, Hyoungsub, Cho, Mann-Ho

“…The passivation effect of an Al O layer on the electrical properties was investigated in HfO -Al O laminate structures grown on indium phosphide (InP)…”
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Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics by Choi, Sungho, An, Youngseo, Lee, Changmin, Song, Jeongkeun, Nguyen, Manh-Cuong, Byun, Young-Chul, Choi, Rino, McIntyre, Paul C., Kim, Hyoungsub

“…We studied the impact of H 2 pressure during post-metallization annealing on the chemical composition of a HfO 2 /Al 2 O 3 gate stack on a HCl wet-cleaned In…”
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Tailoring the Interface Quality between HfO 2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition by Byun, Young-Chul, Choi, Sungho, An, Youngseo, McIntyre, Paul C., Kim, Hyoungsub

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Structural and Electrical Properties of EOT HfO 2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability by Kang, Yu-Seon, Kang, Hang-Kyu, Kim, Dae-Kyoung, Jeong, Kwang-Sik, Baik, Min, An, Youngseo, Kim, Hyoungsub, Song, Jin-Dong, Cho, Mann-Ho

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Comparative Study of Atomic-Layer-Deposited Stacked (HfO 2 /Al 2 O 3 ) and Nanolaminated (HfAlO x ) Dielectrics on In 0.53 Ga 0.47 As by Mahata, Chandreswar, Byun, Young-Chul, An, Chee-Hong, Choi, Sungho, An, Youngseo, Kim, Hyoungsub

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Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP by Mahata, Chandreswar, An, Youngseo, Choi, Sungho, Byun, Young-Chul, Kim, Dae-Kyoung, Lee, Taeyoon, Kim, Jiyoung, Cho, Mann-Ho, Kim, Hyoungsub

“…For possible application to a gate dielectric in high-performance III-V transistors, nanolaminated HfO2–Al2O3 films with artificial compositional profiles were…”
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Electrical properties of the HfO2eAl2O3 nanolaminates with homogeneous and graded compositions on InP by Chandreswar Mahata, Youngseo An, Sungho Choi, Young-Chul Byun, Dae-Kyoung Kim, Taeyoon Lee, Jiyoung Kim, Mann-Ho Cho, Hyoungsub Kim

“…For possible application to a gate dielectric in high-performance III-V transistors, nanolaminated HfO2e Al2O3 films with artificial compositional profiles…”
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Electrical properties of the HfO sub(2)-Al sub(2)O sub(3) nanolaminates with homogeneous and graded compositions on InP by Mahata, Chandreswar, An, Youngseo, Choi, Sungho, Byun, Young-Chul, Kim, Dae-Kyoung, Lee, Taeyoon, Kim, Jiyoung, Cho, Mann-Ho, Kim, Hyoungsub

“…For possible application to a gate dielectric in high-performance III-V transistors, nanolaminated HfO sub(2)-Al sub(2)O sub(3) films with artificial…”
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Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al 2 O 3 : Thermal, Ambient, and Mechanical Stabilities by Hwang, Byungil, An, Youngseo, Lee, Hyangsook, Lee, Eunha, Becker, Stefan, Kim, Yong-Hoon, Kim, Hyoungsub

“…There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and…”
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