Fluorine-doped tin oxide surfaces modified by self-assembled alkanethiols for thin-film devices

•Alkanethiol monolayers were well assembled on fluorine-doped tin oxide.•The qualities of alkanethiols on FTO are so good as the same monolayer on gold.•FTO/SAM was used as the anode to a device based on S-P3MEET, a conductive copolymer.•The charge-trapping effect was dominant in the current injecti...

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Published in:Applied surface science Vol. 279; pp. 67 - 70
Main Authors: Alves, A.C.T., Gomes, D.J.C., Silva, J.R., Silva, G.B.
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 15-08-2013
Elsevier
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Summary:•Alkanethiol monolayers were well assembled on fluorine-doped tin oxide.•The qualities of alkanethiols on FTO are so good as the same monolayer on gold.•FTO/SAM was used as the anode to a device based on S-P3MEET, a conductive copolymer.•The charge-trapping effect was dominant in the current injection process.•The changing of the SAM structure also can be considered in the charge injection. In this work, we have investigated self-assembled monolayers (SAMs) from alkanethiols on fluorine-doped tin oxide (FTO) surfaces, which were used as an anode for thin-film devices prepared from the conductive copolymer so-called sulfonated poly(thiophene-3-[2-(2-methoxyethoxy) ethoxy]-2,5-diyl) (S-P3MEET). The assembled monolayers were characterized by using wetting contact angle, atomic force microscopy, and electrical measurements. The results indicated that dodecanethiol molecules, CH3(CH2)11SH, were well assembled on the FTO surfaces. In addition, it was found similar values of wetting contact angle for dodecanethiol assembled on both FTO and Au surfaces. Concerning the thin-film device, current–voltage analysis revealed a hysteresis. This behavior was associated to a charge-trapping effect and also to structural changes of the SAMs. Finally, charge injection capability of tin oxide electrodes can be improved by using SAMs and then this approach can plays an important role in molecular-scale electronic devices.
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ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.04.025