Search Results - "Alvandpour, A."
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1
A Low-Power Digital DLL-Based Clock Generator in Open-Loop Mode
Published in IEEE journal of solid-state circuits (01-07-2009)“…This paper presents a low-power digital DLL-based clock generator. Once the DLL is locked, it operates in open-loop mode to reduce deterministic clock jitter…”
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2
Utilizing Process Variations for Reference Generation in a Flash ADC
Published in IEEE transactions on circuits and systems. II, Express briefs (01-05-2009)“…This brief presents an experimental study on how to take advantage of the increasing process variations in nanoscale CMOS technologies to achieve small and…”
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3
Jitter Characteristic in Charge Recovery Resonant Clock Distribution
Published in IEEE journal of solid-state circuits (01-07-2007)“…This paper is focused on analysis and suppression of clock jitter in charge recovery resonant clock distribution networks. In the presented analysis, by…”
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4
A sub-130-nm conditional keeper technique
Published in IEEE journal of solid-state circuits (01-05-2002)“…Increasing leakage currents combined with reduced noise margins significantly degrade the robustness of wide dynamic circuits. In this paper, we describe two…”
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5
A 6.2-GFlops Floating-Point Multiply-Accumulator With Conditional Normalization
Published in IEEE journal of solid-state circuits (01-10-2006)“…A pipelined single-precision floating-point multiply-accumulator (FPMAC) featuring a single-cycle accumulate loop using base 32 and internal carry-save…”
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6
A 130-nm 6-GHz 256 × 32 bit leakage-tolerant register file
Published in IEEE journal of solid-state circuits (01-05-2002)“…Describes a 256-word 32-bit 4-read, 4-write ported register file for 6-GHz operation in 1.2-V 130-nm technology. The local bitline uses a pseudostatic…”
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7
A study of injection locking in ring oscillators
Published in 2005 IEEE International Symposium on Circuits and Systems (ISCAS) (2005)“…The paper presents an analysis of the injection locking phenomenon in CMOS ring oscillators. Adler's equation in injection locking is proved for a three-stage…”
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Conference Proceeding -
8
A 4.5-GHz 130-nm 32-KB L0 cache with a leakage-tolerant self reverse-bias bitline scheme
Published in IEEE journal of solid-state circuits (01-05-2003)“…This paper describes a 32-KB two-read, one-write ported L0 cache for 4.5-GHz operation in 1.2-V 130-nm dual-V/sub TH/ CMOS technology. The local bitline uses a…”
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9
A 3.5GHz 32mW 150nm multiphase clock generator for high-performance microprocessors
Published in 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC (2003)“…A 3.5GHz 8-phase all-digital clock generator is fabricated in 150nm CMOS to achieve scalable 1.7/spl times/ frequency-range and 9ps end-to-end time resolution…”
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10
Bitline leakage equalization for sub-100nm caches
Published in ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705) (2003)“…This paper describes a leakage-tolerant circuit technique for embedded sub-100nm SRAM's. The proposed 8-transistor memory cells inject identical leakage…”
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Conference Proceeding -
11
A 53-nW 9.1-ENOB 1-kS/s SAR ADC in 0.13- \mum CMOS for Medical Implant Devices
Published in IEEE journal of solid-state circuits (01-07-2012)“…This paper describes an ultra-low power SAR ADC for medical implant devices. To achieve the nano-watt range power consumption, an ultra-low power design…”
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12
Least-Squares Phase Predistortion of a +30 dBm Class-D Outphasing RF PA in 65 nm CMOS
Published in IEEE transactions on circuits and systems. I, Regular papers (01-07-2013)“…This paper presents a model-based phase-only predistortion method suitable for outphasing radio frequency (RF) power amplifiers (PA). The predistortion method…”
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13
Design and Analysis of a Class-D Stage With Harmonic Suppression
Published in IEEE transactions on circuits and systems. I, Regular papers (01-06-2012)“…This paper presents the design and analysis of a low-power Class-D stage in 90 nm CMOS featuring a harmonic suppression technique, which cancels the 3rd…”
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14
A 2.4 GS/s, Single-Channel, 31.3 dB SNDR at Nyquist, Pipeline ADC in 65 nm CMOS
Published in IEEE journal of solid-state circuits (01-07-2011)“…This paper presents a high-speed single-channel pipeline analog-to-digital converter sampling at 2.4 GS/s. The high sample rate is achieved through the use of…”
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15
Modeling and Digital Predistortion of Class-D Outphasing RF Power Amplifiers
Published in IEEE transactions on microwave theory and techniques (01-06-2012)“…This paper presents a direct model structure for describing class-D outphasing power amplifiers (PAs) and a method for digitally predistorting these…”
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16
Low voltage sensing techniques and secondary design issues for sub-90nm caches
Published in ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705) (2003)“…CMOS technology and architecture trends are causing the speed of VLSI systems to be increasingly limited by the large capacitance of cache bit-lines and…”
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Conference Proceeding -
17
A 3-nW 9.1-ENOB SAR ADC at 0.7 V and 1 kS/s
Published in 2012 Proceedings of the ESSCIRC (ESSCIRC) (01-09-2012)“…This paper presents a 10-bit SAR ADC in 65 nm CMOS for medical implant applications. The ADC consumes 3-nW power and achieves 9.1 ENOB at 1 kS/s. The…”
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18
A +32 dBm 1.85 GHz class-D outphasing RF PA in 130nm CMOS for WCDMA/LTE
Published in 2011 Proceedings of the ESSCIRC (ESSCIRC) (01-09-2011)“…This paper presents a Class-D outphasing RF Power Amplifier (PA) which can operate at a 5.5V supply and deliver +32dBm at 1.85 GHz in a standard 130nm CMOS…”
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19
A high density, low leakage, 5T SRAM for embedded caches
Published in Proceedings of the 30th European Solid-State Circuits Conference (2004)“…This paper describes an embedded high density 128 Kb memory, utilizing a 5-transistor (5T) single bitline SRAM cell in a standard 0.18 /spl mu/m CMOS…”
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20
A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier
Published in German Microwave Conference Digest of Papers (01-03-2010)“…A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite…”
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