Search Results - "Altfeder, I. B."

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  1. 1

    Anisotropic charge ordering on the gallium surface by Altfeder, I B, Chen, D M

    Published in Physical review letters (26-09-2008)
    “…Low-temperature scanning tunneling microscopy of atomically flat Ga(001) islands revealed the 2D electronic superlattice composed of stripe domains. Tunnel…”
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  2. 2

    Anisotropic metal-insulator transition in epitaxial thin films by ALTFEDER, I. B, LIANG, X, YAMADA, T, CHEN, D. M, NAIAYANAMURTI, V

    Published in Physical review letters (04-06-2004)
    “…By comparing the properties of In and Pb quantum wells in a scanning tunneling microscopy subsurface imaging experiment, we found the existence of lateral…”
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  3. 3

    Imaging subsurface reflection phase with quantized electrons by Altfeder, I B, Narayanamurti, V, Chen, D M

    Published in Physical review letters (20-05-2002)
    “…Lead quantum wells (QW) epitaxially grown on annealed Pb/Si(111) interface form a model system for the study of interactions between quantized electrons and…”
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  4. 4

    Confinement-enhanced electron transport across a metal-semiconductor interface by Altfeder, I B, Golovchenko, J A, Narayanamurti, V

    Published in Physical review letters (30-07-2001)
    “…We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111)…”
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  5. 5

    Magic-sized diamond nanocrystals by Altfeder, I B, Hu, J J, Voevodin, A A, Krim, J

    Published in Physical review letters (03-04-2009)
    “…The 2D structural transformation of a heavily boron-doped diamond surface has been revealed using scanning tunneling microscopy (STM). We found that at boron…”
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    Bistability in scanning tunneling spectroscopy of Ga-terminated Si(111) by Altfeder, IB, Chen, DM

    Published in Physical review letters (07-02-2000)
    “…Bistable electron transport, a phenomenon usually associated with double-barrier structures, has been observed with a conventional STM junction formed between…”
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  9. 9

    Anisotropic Metal-Insulator Transition in Epitaxial Thin Films by Altfeder, I. B, Liang, X, Chen, D. M, Narayanamurti, V

    Published 04-11-2003
    “…Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show,…”
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