Search Results - "Altermatt, P.P."

Transmittance from photovoltaic materials under diffuse light by Parretta, A., Altermatt, P.P., Zhao, J.

“…The optical transmittance properties, under diffuse light, of semitransparent materials used to fabricate photovoltaic devices have been investigated by using…”
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Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers by Niewelt, T., Maischner, F., Kwapil, W., Khorani, E., Pain, S.L., Jung, Y., Hopkins, E.C.B., Frosch, M., Altermatt, P.P., Guo, H., Wang, Y.C., Grant, N.E., Murphy, J.D.

“…The carrier lifetime stability of gallium-doped silicon wafers and performance stability of industrial PERC solar cells produced from sister wafers were…”
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Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials by Pointon, A.I., Grant, N.E., Wheeler-Jones, E.C., Altermatt, P.P., Murphy, J.D.

“…Accurate measurements of bulk minority carrier lifetime are essential in order to determine the true limit of silicon's performance and to improve solar cell…”
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Injection intensity-dependent recombination at various grain boundary types in multicrystalline silicon solar cells by Frühauf, F., Altermatt, P.P., Luka, T., Mehl, T., Deniz, H., Breitenstein, O.

“…If the ratio of two open circuit photoluminescence (Voc-PL) images taken at two different light intensities is displayed, some grain boundaries (GBs) may show…”
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A freeware 1D emitter model for silicon solar cells by McIntosh, K R, Altermatt, P P

“…Heavily doped surfaces-often called emitters, diffusions, or back-surface fields-are complicated regions of a solar cell. In these regions, the dopant…”
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Specifying targets of future research in photovoltaic devices containing pyrite (FeS 2) by numerical modelling by Altermatt, Pietro P., Kiesewetter, Tobias, Ellmer, Klaus, Tributsch, Helmut

“…The performance of pyrite (FeS 2) in photovoltaic devices is forecast for various device structures by means of numerical modelling. The physical model is…”
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High efficiency PERT cells on n-type silicon substrates by Jianhua Zhao, Aihua Wang, Altermatt, P.P., Green, M.A., Rakotoniaina, J.P., Breitenstein, O.

“…High minority carrier lifetimes of a few milliseconds have been demonstrated both on CZ and FZ n-type silicon substrates. It is particularly interesting that…”
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24% efficient perl silicon solar cell: Recent improvements in high efficiency silicon cell research by Zhao, Jianhua, Wang, Aihua, Altermatt, Pietro P., Wenham, Stuart R., Green, Martin A.

“…Recent research upon high efficiency passivated emitter, rear locally-diffused (PERL) cells has resulted in a considerable improvement in the energy conversion…”
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Physical Model of Incomplete Ionization for Silicon Device Simulation by Schenk, A., Altermatt, P.P., Schmithusen, B.

“…An empirical model of incomplete ionization (ii) in phosphorus-, arsenic-, and boron-doped crystalline silicon is derived from photoluminescence, conductance,…”
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Simulation of optical properties of Si wire cells by Altermatt, P.P., Yang Yang, Langer, T., Schenk, A., Brendel, R.

“…We solve the Maxwell equations to quantify the amount of photo-generation in Si solar cells consisting of arrays of wires instead of bulk thin-films. Published…”
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Optical loss of photovoltaic modules under diffuse light by Parretta, A, Yakubu, H, Ferrazza, F, Altermatt, P.P, Green, M.A, Zhao, J

“…The optical behaviour of photovoltaic (PV) modules from different fabrication technologies was investigated under diffuse light by a novel characterization…”
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A numerical model of p–n junctions bordering on surfaces by Altermatt, Pietro P, Aberle, Armin G, Zhao, Jianhua, Wang, Aihua, Heiser, Gernot

“…Many solar cell structures contain regions where the emitter p–n junction borders on the surface. If the surface is not well passivated, a large amount of…”
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Spatially resolved analysis and minimization of resistive losses in high-efficiency Si solar cells by Altermatt, Pietro P., Heiser, Gernot, Aberle, Armin G., Wang, Aihua, Zhao, Jianhua, Robinson, Stephen J., Bowden, Stuart, Green, Martin A.

“…This paper presents an improved method for measuring the total lumped series resistance (Rs) of high‐efficiency solar cells. Since this method greatly…”
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Numerical quantification and minimization of perimeter losses in high-efficiency silicon solar cells by Altermatt, Pietro P., Heiser, Gernot, Green, Martin A.

“…This paper presents a quantitative analysis of perimeter losses in high‐efficiency silicon solar cells. A new method of numerical modelling is used, which…”
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Determination of the density of states in heavily doped regions of silicon solar cells by Neuhaus, D.H, Altermatt, P.P, Starrett, R.P, . Aberle, A.G

“…In highly doped crystalline silicon, the formation of an impurity band substantially changes the density of states (DOS) of electrons. As yet, heavily doped…”
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Discussion of recombination current mechanisms at grain boundaries in the bulk: a simplified model by Harder, N.-P., Neuhaus, D.-H., Altermatt, P.P.

“…The disruption of the periodic crystal lattice at the boundaries of crystal grains in polycrystalline silicon causes a high density of states within the 'band…”
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Injection dependence of spontaneous radiative recombination in c-Si: experiment, theoretical analysis, and simulation by Altermatt, P.P., Geelhaar, F., Trupke, T., Dai, X., Neisser, A., Daub, E.

“…The radiative recombination coefficient B in crystalline bulk silicon is enhanced by the Coulomb attraction between electrons and holes. This effect and hence…”
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18.2% efficient multicrystalline silicon cell by Zhao, J., Wang, A., Altermatt, P.P., Green, M.A.

“…This paper reports an 18.2% energy conversion efficiency and a 645 mV open-circuit voltage from a multicrystalline silicon cell with a planar front surface…”
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The density of states in heavily doped regions of silicon solar cells by Neuhaus, D.H., Altermatt, P.P., Starrett, R.P., Schenk, A., Aberle, A.G.

“…The density of states (DOS) of crystalline silicon changes with the introduction of dopants due to the formation of an impurity band and band tails. Until now,…”
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Establishing an accurate numerical model for the 2D-simulation of buried contact cells [solar cells] by Altermatt, P.P., Heiser, G., Kiesewetter, T., McIntosh, K.R., Honsberg, C.B., Wenham, S.R., Green, M.A.

“…An accurate numerical model is established for the simulation of buried contact solar cells in two dimensions. The physical parameters and the approximations…”
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