Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V ), silicon and carbon divacancies (V V ), and nitrogen vacancies (N V ) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca....

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Bibliographic Details
Published in:	Beilstein journal of nanotechnology Vol. 10; no. 1; pp. 2383 - 2395
Main Authors:	Castelletto, Stefania, Al Atem, Abdul Salam, Inam, Faraz Ahmed, von Bardeleben, Hans Jürgen, Hameau, Sophie, Almutairi, Ahmed Fahad, Guillot, Gérard, Sato, Shin-Ichiro, Boretti, Alberto, Bluet, Jean Marie
Format:	Journal Article
Language:	English
Published:	Germany Beilstein-Institut zur Föerderung der Chemischen Wissenschaften 2019 Karlsruhe Institute of Technology Beilstein-Institut
Subjects:	Arrays Color centers Computer simulation Diameters Divacancies Efficiency Emission Engineering Sciences Finite element method Fluorescence Full Research Paper Interfaces Magnetic fields Micro and nanotechnologies Microelectronics micropillars Nanoscience Nanotechnology Photoluminescence Photonics Point defects proton irradiation Quantum dots quantum sensing Silicon carbide Surgical implants Vacancies vacancy quantum sensing color centers micropillars proton irradiation silicon carbide vacancy
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Summary:	We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V ), silicon and carbon divacancies (V V ), and nitrogen vacancies (N V ) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of V measuring an enhancement by up to a factor of 20, and of N V with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of V and N V for in vivo imaging and sensing in the infrared.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	2190-4286 2190-4286
DOI:	10.3762/bjnano.10.229