Search Results - "Almeida, Luciano M."

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering by Nicoletti, T., Aoulaiche, M., Almeida, L. M., Santos, S. D., Martino, J. A., Veloso, A., Jurczak, M., Simoen, E., Claeys, C.

“…The floating-body-RAM sense margin and retention-time dependence on the gate length is investigated in UTBOX devices using BJT programming combined with a…”
Get full text

Moscas ectoparasitas (Diptera, Streblidae) de morcegos (Mammalia, Chiroptera) em um remanescente periurbano de Cerrado: composição da comunidade, prevalência, intensidade de infestação e especificidade by Torres, Jaire M., Urbieta, Gustavo L., Almeida, Luciano B. M. de, Soares, Driele K. F., Anjos, Elaine A. C. dos

“…RESUMO Moscas Streblidae ocorrem exclusivamente em morcegos e estão mundialmente distribuídas, com uma alta riqueza de moscas e hospedeiros no Brasil…”
Get full text

Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses by Macambira, Christian N., Itocazu, Vitor T., Almeida, Luciano M., Martino, Joao A., Simoen, Eddy, Claeys, Cor

“…This paper presents an analysis of the Ground Plane (GP) influence on the Zero Temperature Coefficient (ZTC) in Ultra Thin Body and Buried Oxide (UTBB) Silicon…”
Get full text

Back gate influence on transistor efficiency of SOI nMOS Ω-gate nanowire down to 10nm width by Itocazu, Vitor T., Almeida, Luciano M., Sonnenberg, Victor, Agopian, Paula G. D., Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Martino, Joao A.

“…This paper shows the influence of back gate bias on transistor efficiency of nMOS SOI Ω-gate nanowire, for different width and channel length. Threshold…”
Get full text

Influence of proton radiation and strain on nFinFET zero temperature coefficient by Nascimento, Vinicius M., Agopian, Paula G. D., Almeida, Luciano M., Bordallo, Caio C. M., Simoen, Eddy, Claeys, Cor, Martino, Joao A.

“…This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on…”
Get full text

Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias by Sasaki, Katia R. A., Almeida, Luciano M., Nissimoff, Albert, Aoulaiche, Marc, Martino, Joao A., Simoen, Eddy, Claeys, Cor

“…This paper aims to analyze the band gap and the pulsed back gate bias influence on the retention time of an UTBOX SOI applied as a 1T-DRAM memory cell. This…”
Get full text