Search Results - "Almaev, A. V"
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Influence of Electrodes on the Parameters of Solar-Blind Detectors of UV Radiation
Published in Semiconductors (Woodbury, N.Y.) (01-03-2021)“…The influence of the topology of electrodes on the electrical and photoelectric characteristics of metal–semiconductor–metal structures is studied…”
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2
Solar-Blind UV Detectors Based on β-Ga2O3 Films
Published in Semiconductors (Woodbury, N.Y.) (01-06-2020)“…Resistive-type structures based on gallium-oxide films are studied. The Ga 2 O 3 films are produced by radio-frequency magnetron-assisted sputtering of a β-Ga…”
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3
High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia
Published in Semiconductors (Woodbury, N.Y.) (01-12-2023)“…The effect of H 2 , NH 3 , CO and O 2 on the electrically conductive properties of In 2 O 3 films grown by halide vapor phase epitaxy has been studied. In the…”
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Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions
Published in High energy chemistry (01-06-2024)“…For the first time, nanostructured thin films of the β-Ga 2 O 3 −GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane…”
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5
Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films
Published in Technical physics letters (01-12-2023)“…The effect of the gaseous medium composition on the electrically conductive properties of In 2 O 3 –Ga 2 O 3 films obtained by halide vapor phase epitaxy has…”
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6
Electrical Conductive and Photoelectrical Properties of Heterostructures Based on Gallium and Chromium Oxides with Corundum Structure
Published in Technical physics letters (01-12-2023)“…α-Ga 2 O 3 /α-Cr 2 O 3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural,…”
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Selective Sensors of Nitrogen Dioxide Based on Thin Tungsten Oxide Films under Optical Irradiation
Published in Technical physics letters (01-10-2019)“…It is shown that NO 2 present in air, beginning at a concentration of 1 ppm, can be selectively detected by sensors based on Au/WO 3 :Au thin films activated…”
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8
Synthesis and Gas Sensitivity of Thin Chromium Oxide Films
Published in Technical physics letters (01-10-2020)“…Thin polycrystalline Cr 2 O 3 films were obtained using RF magnetron sputtering followed by annealing in air at T = 673 K. The obtained films had grain…”
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Study of the Abnormally High Photocurrent Relaxation Time in α-Ga2O3-Based Schottky Diodes
Published in Russian microelectronics (01-12-2023)“…Ga 2 O 3 is a wide-bandgap material with a number of unique characteristics that make it a promising material for photonics: it is optically transparent to…”
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10
Effect of Ambient Humidity on the Electrical Conductivity of Polymorphic Ga2O3 Structures
Published in Semiconductors (Woodbury, N.Y.) (01-03-2021)“…The effect of ambient humidity on the electrical conductivity of α-Ga 2 O 3 and α-Ga 2 O 3 /ε-Ga 2 O 3 is investigated. Polymorphic epitaxial Ga 2 O 3 layers…”
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11
Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold
Published in Russian physics journal (01-11-2017)“…Effect of hydrogen in the concentration range from 10 to 2000 ppm on the characteristics of sensors based on thin films of tin dioxide modified with gold…”
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Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Platinum, Palladium, Silver, and Yttrium
Published in Russian physics journal (01-10-2018)“…The dependence of the characteristics of hydrogen sensors based on thin Pt/Pd/SnO 2 :Sb, Ag, Y and Ag/SnO 2 :Sb, Ag, Y films obtained by the method of…”
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13
Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga2O3
Published in Semiconductors (Woodbury, N.Y.) (01-10-2020)“…The effect of ultraviolet radiation and a strong electric field on the conductivity of structures based on two types of polymorphic gallium-oxide films is…”
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14
Dependences of Characteristics of Sensors Based on Tin Dioxide on the Hydrogen Concentration and Humidity of Gas Mixture
Published in Russian physics journal (01-05-2017)“…An expression is obtained for the energy band bending eφ sH on the surface of the SnO 2 film in the clean air + hydrogen mixture. It is assumed that the value…”
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15
Properties of Resistive Structures Based on Gallium Oxide Polymorphic Phases
Published in Technical physics letters (01-09-2020)“…The effect of UV radiation and a strong electric field on the current–voltage characteristics of resistive structures based on polymorphic gallium oxide (Ga 2…”
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16
Anodic Gа2O3 Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode
Published in Russian physics journal (01-09-2020)“…The electrical and photoelectrical characteristics of Ga 2 O 3 / n -GaAs structures with anodic gallium oxide films obtained by oxidation of n -GaAs in the…”
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Effect of Additives of Pt, Pd, Ag, and Y in Thin Nanocrystalline SnO2 Films on the Characteristics of Resistive Hydrogen Sensors
Published in Russian physics journal (01-09-2018)“…The results of studying electrical and gas sensitive characteristics of H 2 sensors based on thin nanocrystalline SnO 2 films with the Pt, Pd, and Ag dispersed…”
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Properties of Resistive Hydrogen Sensors as a Function of Additives of 3D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films
Published in Russian physics journal (01-11-2017)“…Analysis of the results of studying electrical and gas sensitive characteristics of the molecular hydrogen sensors based on thin nanocrystalline SnO 2 films…”
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19
Gas sensitivity of PECVD β-Ga2O3 films with large active surface
Published in Materials chemistry and physics (01-07-2024)“…The gas-sensitive properties of Ga2O3 films, first synthesized by plasma-enhanced chemical vapor deposition (PECVD), with respect to gaseous species of…”
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20
Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear
Published in Materials science in semiconductor processing (01-06-2022)“…The tribological experiment applied to the gallium oxide wafer led to changes in its structure which can reduce the single crystal perfection. The effect of…”
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