Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures

Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures

Nonpolar m-plane InGaN/GaN light emitting diode structures with quantum well (QW) were grown on LiAlO 2 (100) substrates. Their photoluminescence and electroluminescence were investigated at different excitation levels. It was shown that in QW of InGaN with the pronounced InGaN band tailing, the pop...

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Bibliographic Details
Published in:Journal of applied spectroscopy Vol. 82; no. 6; pp. 956 - 960
Main Authors: Lutsenko, E. V., Rzheutski, M. V., Pavlovskii, V. N., Alyamani, A., Aljohenii, M., Aljerwii, A., Mauder, C., Reuters, B., Kalisch, H., Heuken, M., Vescan, A.
Format: Journal Article
Language:English
Published: New York Springer US 2016
Springer
Subjects:
Analysis
Analytical Chemistry
Atomic/Molecular Structure and Spectra
Gallium nitrate
Light-emitting diodes
Photoluminescence
Physics
Physics and Astronomy
Quantum wells
m-plane
InGaN/GaN
photoluminescence
quantum well
nonpolar orientation
electroluminescence
heterostructure
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Summary:Nonpolar m-plane InGaN/GaN light emitting diode structures with quantum well (QW) were grown on LiAlO 2 (100) substrates. Their photoluminescence and electroluminescence were investigated at different excitation levels. It was shown that in QW of InGaN with the pronounced InGaN band tailing, the populating of both the first and the second valence subbands of InGaN takes place due to tunneling of charge carriers and, therefore, a lower degree of polarization of the electroluminescence was observed in comparison with photoluminescence. The differences in luminescence properties under optical and electrical excitation are discussed.
ISSN:0021-9037
1573-8647
DOI:10.1007/s10812-016-0211-7