Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be...

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Bibliographic Details
Published in:Applied physics letters Vol. 107; no. 17
Main Authors: Alfaraj, Nasir, Hussain, Aftab M., Torres Sevilla, Galo A., Ghoneim, Mohamed T., Rojas, Jhonathan P., Aljedaani, Abdulrahman B., Hussain, Muhammad M.
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 26-10-2015
Subjects:
Applied physics
Carrier transport
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DIELECTRIC MATERIALS
ELECTRON MOBILITY
Electronic devices
Electronics
FIELD EFFECT TRANSISTORS
Flexible components
Impact loads
INTEGRATED CIRCUITS
Jewelry
LEAKAGE CURRENT
METALS
MOSFETs
Semiconductor devices
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
Transistors
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Summary:Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4934355