Search Results - "Alff, L."

Sc-substituted Nasicon solid electrolyte for an all-solid-state NaxCoO2/Nasicon/Na sodium model battery with stable electrochemical performance by Kehne, P., Guhl, C., Ma, Q., Tietz, F., Alff, L., Hausbrand, R., Komissinskiy, P.

“…All-solid-state sodium batteries are attractive due to the abundance of sodium and advantageous for safe battery operation by avoiding flammable organics and…”
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Towards forming-free resistive switching in oxygen engineered HfO2−x by Sharath, S. U., Bertaud, T., Kurian, J., Hildebrandt, E., Walczyk, C., Calka, P., Zaumseil, P., Sowinska, M., Walczyk, D., Gloskovskii, A., Schroeder, T., Alff, L.

“…We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2−x thin films grown on TiN electrodes using reactive…”
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Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM by Sharath, S U, Joseph, M J, Vogel, S, Hildebrandt, E, Komissinskiy, P, Kurian, J, Alff, L

“…We have investigated the material and electrical properties of tantalum oxide thin films (TaOx) with engineered oxygen contents grown by RF-plasma assisted…”
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Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices by Aguirre, F. L., Piros, E., Kaiser, N., Vogel, T., Petzold, S., Gehrunger, J., Hochberger, C., Oster, T., Hofmann, K., Suñé, J., Miranda, E., Alff, L.

“…In this work, the quasi-analog to discrete transition occurring in the current–voltage characteristic of oxygen engineered yttrium oxide-based resistive…”
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The effect of calcium impurities of β″-alumina on the degradation of NaxCoO2 cathodes in all solid state sodium-ion batteries by Kehne, P., Guhl, C., Alff, L., Hausbrand, R., Komissinskiy, P.

“…β″-alumina is a promising solid electrolyte candidate for room-temperature all-solid-state sodium-ion batteries due to its high sodium ionic conductivity of up…”
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Thin film phase diagram of iron nitrides grown by molecular beam epitaxy by Gölden, D., Hildebrandt, E., Alff, L.

“…A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by…”
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Simulation of Bipolar-Type Resistive Switching Devices Using a Recursive Approach to the Dynamic Memdiode Model by Miranda, E., Piros, E., Aguirre, F.L., Kim, T., Schreyer, P., Gehrunger, J., Oster, T., Hofmann, K., Sune, J., Hochberger, C., Alff, L.

“…Very often researchers in the field of resistive switching devices or memristors need to model their experimental data using a compact representation without…”
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The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices by Miranda, E., Piros, E., Aguirre, F. L., Kim, T., Schreyer, P., Gehrunger, J., Schwarz, T., Oster, T., Hofmann, K., Sune, J., Hochberger, C., Alff, L.

“…Tuning the conductance of a memristive device is a process that requires energy and involves power dissipation. In this letter, the role the memory state…”
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Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories by Sharath, S U, Kurian, J, Komissinskiy, P, Hildebrandt, E, Bertaud, T, Walczyk, C, Calka, P, Alff, L

“…The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using…”
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Raman study of the Verwey transition in magnetite thin films by Baghaie Yazdi, M, Choi, K-Y, Wulferding, D, Lemmens, P, Alff, L

“…We have grown epitaxial thin films of magnetite on MgO and Al2O3 substrates with sharp and distinct signatures of the Verwey transition in resistivity and…”
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Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation by Nandi, U., Mohammadi, M., Lu, H., Norman, J., Gossard, A. C., Alff, L., Preu, S.

“…ErAs:In(Al)GaAs photoconductors have proven to be outstanding devices for photonic terahertz (0.1–10 THz) generation and detection with previously reported…”
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FIB based fabrication of an operative Pt/HfO2/TiN device for resistive switching inside a transmission electron microscope by Zintler, A., Kunz, U., Pivak, Y., Sharath, S.U., Vogel, S., Hildebrandt, E., Kleebe, H.-J., Alff, L., Molina-Luna, L.

“…•Fabrication of an operational resistive switching device for in situ TEM biasing.•The device is based on a Pt/HfO2/TiN metal-insulator-metal (MIM)…”
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Electronic depth profiles with atomic layer resolution from resonant soft x-ray reflectivity by Zwiebler, M, Hamann-Borrero, J E, Vafaee, M, Komissinskiy, P, Macke, S, Sutarto, R, He, F, Büchner, B, Sawatzky, G A, Alff, L, Geck, J

“…The analysis of x-ray reflectivity data from artificial heterostructures usually relies on the homogeneity of optical properties of the constituent materials…”
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Atomically interface engineered micrometer-thick SrMoO3 oxide electrodes for thin-film BaxSr1-xTiO3 ferroelectric varactors tunable at low voltages by Salg, P., Walk, D., Zeinar, L., Radetinac, A., Molina-Luna, L., Zintler, A., Jakoby, R., Maune, H., Komissinskiy, P., Alff, L.

“…In the field of oxide electronics, there has been tremendous progress in the recent years in atomic engineering of functional oxide thin films with controlled…”
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Low-Temperature Phase c-axis Oriented Manganese Bismuth Thin Films With High Anisotropy Grown From an Alloy Mn55Bi45 Target by Sabet, S., Hildebrandt, E., Romer, F. M., Radulov, I., Zhang, H., Farle, M., Alff, L.

“…Manganese bismuth thin films were deposited from a Mn55Bi45 (at.%) alloy target onto glass substrates at room temperature using dc magnetron sputtering. The…”
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Hafnium carbide formation in oxygen deficient hafnium oxide thin films by Rodenbücher, C., Hildebrandt, E., Szot, K., Sharath, S. U., Kurian, J., Komissinskiy, P., Breuer, U., Waser, R., Alff, L.

“…On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO2− x ) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC…”
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Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks by Aguirre, F., Piros, E., Kaiser, N., Vogel, T., Petzold, S., Gehrunger, J., Oster, T., Hofmann, K., Hochberger, C., Suñé, J., Alff, L., Miranda, E.

“…This paper reports a simulation study concerning the effect of yttrium oxide stoichiometry on output features of a memristor-based single layer perceptron…”
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Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films by Reisinger, D., Majewski, P., Opel, M., Alff, L., Gross, R.

“…Magnetite epitaxial thin films have been prepared by pulsed laser deposition on MgO and Si substrates. The magnetic and electrical properties of these…”
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(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates by Bick, D. S., Sharath, S. U., Hoffman, I., Major, M., Kurian, J., Alff, L.

“…We have studied the growth of CeO 2 thin films by molecular beam epitaxy on r -cut sapphire substrates. The oxidation state of the substrate surface controls…”
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New class of T′-structure cuprate superconductors by Tsukada, A., Krockenberger, Y., Noda, M., Yamamoto, H., Manske, D., Alff, L., Naito, M.

“…High-temperature superconductivity has been discovered in La 2− x Ba x CuO 4 [J.G. Bednorz, K.A. Müller, Z. Phys. B 64 (1986) 189. [1]], a compound that…”
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