Search Results - "Albahrani, Sayed A."

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  1. 1
    Characterization of trapping and thermal dispersion in GaN HEMTs

    Characterization of trapping and thermal dispersion in GaN HEMTs by Albahrani, Sayed A, Parker, Anthony E

    “…Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. Measurements and SPICE simulation are used to…”
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  2. 2
    GaAs MMIC pHEMT gate metal thermometry

    GaAs MMIC pHEMT gate metal thermometry by Schwitter, Bryan K., Parker, Anthony E., Albahrani, Sayed A., Fattorini, Anthony P., Heimlich, Michael C.

    “…A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate…”
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  3. 3
    Classification of trapping characteristic in HEMTs

    Classification of trapping characteristic in HEMTs by Albahrani, Sayed A, Parker, Anthony E

    “…Trapping phenomenon is classified through its manifestation in the I DS -V DS and I DS -V GS characteristics using a new trapping model based on SRH theory…”
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  4. 4
    Study of self-heating in GaAs pHEMTs using pulsed I-V Analysis

    Study of self-heating in GaAs pHEMTs using pulsed I-V Analysis by Schwitter, Bryan, Albahrani, Sayed A., Parker, Anthony, Dunleavy, Lawrence, Heimlich, Michael

    “…A pulsed I-V thermal resistance R th measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion…”
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  5. 5
    Characterizing drain current dispersion in GaN HEMTs with a new trap model

    Characterizing drain current dispersion in GaN HEMTs with a new trap model by Albahrani, Sayed A., Rathmell, James G., Parker, Anthony E.

    Published in 2009 European Microwave Conference (EuMC) (01-09-2009)
    “…Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and…”
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  6. 6
    Characterizing drain current dispersion in GaN HEMTs with a new trap model

    Characterizing drain current dispersion in GaN HEMTs with a new trap model by Albahrani, S.A., Rathmell, J.G., Parker, A.E.

    “…Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and…”
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  7. 7
    Impact of the pulse-amplifier slew-rate on the pulsed-IV measurement of GaN HEMTs

    Impact of the pulse-amplifier slew-rate on the pulsed-IV measurement of GaN HEMTs by Albahrani, S A, Parker, A E

    “…The influence of the non-ideal response of the pulse-amplifier on the trap and self-heating dynamics, and hence, on the drain-current transient in a GaN HEMT…”
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