Search Results - "Alatise, O.M."
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Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter
Published in IEEE transactions on electron devices (01-12-2009)“…The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementary-metal-oxide-semiconductor (CMOS) inverter and the voltage…”
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Journal Article -
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Performance Enhancements in Scaled Strained-SiGe pMOSFETs With [Formula Omitted] Gate Stacks
Published in IEEE transactions on electron devices (01-10-2009)“…The origin of the loss in performance enhancement commonly observed in strained-SiGe devices at short gate lengths is examined and found to be dominated by…”
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Journal Article -
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Performance Enhancements in Scaled Strained-SiGe pMOSFETs With \hbox/\hbox Gate Stacks
Published in IEEE transactions on electron devices (01-10-2009)“…The short-channel performance of compressively strained Si 0.77 Ge 0.23 pMOSFETs with HfSiO x /TiSiN gate stacks has been characterized alongside that of…”
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Journal Article -
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The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs
Published in Solid-state electronics (01-03-2010)“…The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated. The…”
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Journal Article -
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Improved analog performance of strained Si n-MOSFETs on thin SiGe strained relaxed buffers
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01-09-2008)“…Strained Si/SiGe devices offer a route to high speed digital devices. Analog design trade-offs can also be improved using strained Si if device self-heating…”
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Conference Proceeding -
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Surface water potential of the river Osun at Apoje sub-basin Nigeria
Published in Soil and water research (2008)“…In order to archive the millennium goals of which water for all by the year 2015 is a major component; all efforts must be made to efficiently utilise the…”
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Journal Article -
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Understanding Linear-Mode Robustness in Low-Voltage Trench Power MOSFETs
Published in IEEE transactions on device and materials reliability (01-03-2010)“…The high-temperature electrothermal stability and linear-mode robustness of low-voltage discrete power trench MOSFETs are assessed. The linear-mode robustness…”
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