A high performance gate engineered charge plasma based tunnel field effect transistor

A high performance gate engineered charge plasma based tunnel field effect transistor

In this paper, we propose a new gate engineered dopingless tunnel field effect transistor (GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to realize source and drain regions in undoped silicon; a charge plasma concept. The novelty of the device is the use of dual m...

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Bibliographic Details
Published in:Journal of computational electronics Vol. 14; no. 2; pp. 477 - 485
Main Authors: Bashir, Faisal, Loan, Sajad A., Rafat, M., Alamoud, Abdul Rehman M., Abbasi, Shuja A.
Format: Journal Article
Language:English
Published: New York Springer US 01-06-2015
Springer Nature B.V
Subjects:
Amplifiers
Electrical Engineering
Engineering
Field effect transistors
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Optical and Electronic Materials
Plasma
Semiconductor devices
Silicon
Simulation
Switching
Theoretical
Transient analysis
Transistors
Tunnels
Work functions
Switching performance
Dopingless
TFET
Gate engineering
Charge plasma
Band-to-band tunneling (BTBT)
Subthreshold slope
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Summary:In this paper, we propose a new gate engineered dopingless tunnel field effect transistor (GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to realize source and drain regions in undoped silicon; a charge plasma concept. The novelty of the device is the use of dual material top gate and thus two gates appear at the top, main gate 1 and a tunneling gate (TG). The use of TG has enhanced the performance of the device significantly and it acts as a performance booster. The simulation study has shown that the I ON and I ON / I OFF ratio in the proposed GEDL-TFET device have increased by ∼ 53 times and ∼ 68 times in comparison to a double gate doped TFET (D-TFET) and a double gate dopingless TFET (DL-TFET) devices respectively. Further, a significant improvement in average subthreshold slope of ∼ 57% has been achieved in the proposed GEDL-TFET device in comparison to the other two devices. Besides, the cutoff frequency ( f T ) of GEDL-TFET (90.77 GHZ) has increased by ∼ 12 times in comparison to D-FET ( ∼ 7.77 GHZ) and DL-TFET ( ∼ 7.77 GHZ) devices respectively. The transient analyses have shown that a reduction of 47 and 44.11 % in switching ON-delay and 21.1 and 16.23 % in switching OFF delay is obtained in the GEDL-TFET device based inverting amplifier in comparison to DL-TFET and D-TFET based inverters amplifiers respectively.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-015-0665-5