Search Results - "Al Muyeed, Syed Ahmed"

Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes by Xue, Haotian, Muyeed, Syed Ahmed Al, Palmese, Elia, Rogers, Daniel, Song, Renbo, Tansu, Nelson, Wierer, Jonathan J.

“…The recombination rates are measured and analyzed for red-emitting InGaN light-emitting diodes (LEDs) to better understand the factors that limit their…”
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Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm by Muyeed, Syed Ahmed Al, Borovac, Damir, Xue, Haotian, Wei, Xiongliang, Song, Renbo, Tansu, Nelson, Wierer, Jonathan J.

“…The recombination rates in an In 0.25 Ga 0.75 N/Al 0.48 Ga 0.52 N/GaN multiple quantum well (MQW) structure are measured to identify the cause of low…”
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Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers by Al Muyeed, Syed Ahmed, Sun, Wei, Wei, Xiongliang, Song, Renbo, Koleske, Daniel D., Tansu, Nelson, Wierer, Jonathan J.

“…Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of…”
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Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission by Sun, Wei, Al Muyeed, Syed Ahmed, Song, Renbo, Wierer, Jonathan J., Tansu, Nelson

“…Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is…”
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Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots by Wei, Xiongliang, Al Muyeed, Syed Ahmed, Xue, Haotian, Wierer, Jr, Jonathan J

“…Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and…”
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Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching by Wei, Xiongliang, Al Muyeed, Syed Ahmed, Peart, Matthew R., Sun, Wei, Tansu, Nelson, Wierer, Jonathan J.

“…Room temperature luminescence of epitaxial InGaN quantum dots (QDs) formed by quantum sized-controlled photoelectrochemical (QSC-PEC) etching and passivation…”
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Study of the current on/off ratio of an Indium Arsenide circular nanowire transistor using non-equilibrium green's function approach by Al Muyeed, Syed Ahmed, Misbah, Ibrahim

“…The effect of gate dielectric material, channel length, thickness of gate oxide and the diameter of the channel on the on/off current ratio of a circular…”
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Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters by Wei, Xiongliang, Muyeed, Syed Ahmed Al, Peart, Matthew, Tansu, Nelson, Wierer, Jonathan J.

“…InGaN quantum dots formed by quantum-size controlled photoelectrochemical etching are demonstrated. The QDs are capped with AlGaN/GaN passivation layers to…”
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Recombination Rates of In x Ga 1−x N/Al y Ga 1−y N/GaN Multiple Quantum Wells Emitting From 640 to 565 nm by Muyeed, Syed Ahmed Al, Borovac, Damir, Xue, Haotian, Wei, Xiongliang, Song, Renbo, Tansu, Nelson, Wierer, Jonathan J.

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Improvement in the Radiative Efficiency of InGaN-Based Multiple Quantum Wells using AlGaN Interlayers by Muyeed, Syed Ahmed Al, Sun, Wei, Wei, Xiongliang, Song, Renbo, Koleske, Daniel, Tansu, Nelson, Wierer, Jonathan J.

“…Al y Ga 1-y N interlayers are used on top of In x Ga 1-x N quantum wells as strain compensating layers to force pseudomorphic growth of the entire…”
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Absorption properties of Silver-Silica-Gold Nanomatryushka particle and its optimization for photo-thermal cancer therapy by Shashi, Farzana Hasan, Misbah, Ibrahim, Al Muyeed, Syed Ahmed

“…The tunable optical properties of Silver-Silica-Gold Nanomatryushka particle has been studied theoretically within the Mie scattering framework in context of…”
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Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates by Al Muyeed, Syed Ahmed, Wei, Xiongliang, Borovac, Damir, Song, Renbo, Tansu, Nelson, Wierer, Jonathan J.

“…•InGaN quantum dot (QD) growth templates made by photoelectrochemical (PEC) etching.•Self-assembled (SA) InGaN QD growth is controlled using PEC InGaN QD…”
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III-Nitride Interlayer Active Region Light Emitters in the Visible Range by Al Muyeed, Syed Ahmed

“…InGaN-based multiple quantum wells (MQWs) are used as the active region for the highest efficiency violet-blue light-emitting diodes (LEDs) and laser diodes…”
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