Search Results - "Aktik, C."

Structural and mechanical properties of amorphous silicon carbonitride films prepared by vapor-transport chemical vapor deposition by Awad, Y., El Khakani, M.A., Aktik, C., Mouine, J., Camiré, N., Lessard, M., Scarlete, M., Al-Abadleh, H.A., Smirani, R.

“…The deposition of amorphous silicon carbonitride (a-SiCN:H) films has been successfully achieved through an in-house developed vapor-transport chemical vapor…”
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Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition by Awad, Y., El Khakani, M.A., Brassard, D., Smirani, R., Camiré, N., Lessard, M., Aktik, C., Scarlete, M., Mouine, J.

“…We report on the effect of thermal annealing on the structural and mechanical properties of amorphous SiC thin films prepared by means of a polymer-source…”
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Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition by Fanaei, T., Camiré, N., Aktik, C., Gujrathi, S., Lessard, M., Awad, Y., Oulachgar, E., Scarlete, M.

“…Polymeric source chemical vapor deposition (PS-CVD) was used to synthesize amorphous silicon carbide (a-SiC) thin films. The PS-CVD process was conducted at…”
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Thermally induced interfacial interactions between various metal substrates and a-SiC thin films deposited by a polymer-source chemical vapor deposition by Awad, Y., El Khakani, M.A., Aktik, C., Mouine, J., Camiré, N., Lessard, M., Scarlete, M.

“…Amorphous silicon carbide (a-SiC) thin films have been deposited onto a variety of substrates, including silicon, SiO 2, Si 3N 4, Cr, Ti and refractory…”
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Photoluminescence study of gallium arsenide irradiated with 15 MeV alpha particles by Sellami, L., Aubin, M., Aktik, C., Carlone, C., Houdayer, A., Hinrichsen, P.

“…Gallium arsenide wafers were irradiated at room temperature with 15 MeV alpha particles and fluences in the range 10/sup 10/ to 10/sup 14/ /spl alpha//cm/sup…”
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Interface state buildup by high-field stressing in various metal-oxide-semiconductor insulators using deep level transient spectroscopy by Belkouch, S., Jean, C., Aktik, C., Ameziane, E. L.

“…The buildup of interface states with high field (HF) stressing have been observed in thermally grown oxide, N2O nitrided oxide (NO), and reoxided nitrided…”
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Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition by Jaouad, A., Aimez, V., Aktik, Ç., Bellatreche, K., Souifi, A.

“…Metal-insulator-semiconductor (MIS) capacitors were fabricated on n-GaAs(100) substrate using (NH4)2S surface passivation and low-frequency plasma-enhanced…”
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Passivation of GaAs metal–insulator–semiconductor structures by (NH4)2Sx and by evaporation of SiO2 by Jaouad, A., Aktik, Ç.

“…Al–SiO 2 – GaAs structures are prepared and characterized by electrical measurements. The GaAs (100) surfaces are cleaned and passivated by chemical solutions…”
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Passivation of GaAs metal-insulator-semiconductor structures by (NH sub(4)) sub(2 )S sub(x) and by evaporation of SiO sub(2) by Jaouad, A, Aktik, C

“…GaAs MIS structures were fabricated using evaporated SiO sub(2). For these structures, the oxide removal alone does not permit to unpin the Fermi level, and…”
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The photoconductivity spectrum of electron and neutron irradiated n lightly doped GaAs by Khanna, S.M., Carlone, C., Halle, S., Parenteau, M., Beliveau, A., Aktik, C., Gerdes, J.W.

“…The spectral photoconductivity spectrum of lightly doped n GaAs exposed to electron and neutron irradiation is studied. From the temperature dependence of the…”
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Passivation of GaAs using P2S5/(NH4)2S+Se and (NH4)2S+Se by Fanaei S., T., Aktik, C.

“…We compared the passivation methods for GaAs surface using (NH4)2S+Se and P2S5/(NH4)2S+Se. The characteristics of the Schottky contacts fabricated on GaAs,…”
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Passivation of GaAs using P 2 S 5 /( NH 4 ) 2 S + Se and ( NH 4 ) 2 S + Se by Fanaei S., T., Aktik, C.

“…We compared the passivation methods for GaAs surface using ( NH 4 ) 2 S + Se and P 2 S 5 /( NH 4 ) 2 S + Se . The characteristics of the Schottky contacts…”
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Radiation effects on heavily doped n-GaAs by Carlone, C., Parenteau, M., Aktik, C., Khanna, S.M., Rowell, N.L., Gerdes, J.W.

“…Studies the photoluminescence spectrum of silicon doped gallium arsenide with n=1.02*10/sup 16/, 1.7*10/sup 18/ and 2.7*10/sup 18//cm/sup 3/. The band-to-band…”
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Radiation effects on heavily doped n GaAs by Carlone, C, Parenteau, M, Aktik, C, Khanna, S M, Rowell, N L, Gerdes, J W

“…We have studied the photoluminescence spectrum of silicon doped gallium arsenide with n = 1.02 x 10 super(16), 1.7 x 10 super(18) and 2.7 x 10 super(18)/cm…”
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A simple velocity model for low-pressure metalorganic chemical vapor deposition by Aktik, Cetin, Belkouch, Said

“…A new simple transport model is used to describe the dependence of the electrical characteristics of the epitaxial layer on the growth parameters in…”
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Se chemical passivation and annealing treatment for GaAs Schottky diode by Xu, Huaiqi, Belkouch, Saïd, Aktik, Cetin, Rasmussen, Wolfgang

“…A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one…”
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GaAs surface chemical passivation by (NH 4) 2S+Se and the effect of annealing treatments by Belkouch, S., Aktik, C., Xu, H., Ameziane, E.L.

“…We report on a new Se chemical passivation [(NH 4) 2S + Se] for GaAs surfaces. We compare our Se passivated surfaces with (NH 4) 2S + S [(NH 4) 2S x ]…”
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Passivation of GaAs metal–insulator–semiconductor structures by ( NH 4 ) 2 S x and by evaporation of SiO 2 by Jaouad, A., Aktik, Ç.

“…Al–SiO 2 – GaAs structures are prepared and characterized by electrical measurements. The GaAs (100) surfaces are cleaned and passivated by chemical solutions…”
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The photoconductivity spectrum of electron and neutron irradiated in lightly doped GaAs by Khanna, S., Carlone, C., Halle, S., Parenteau, M., Beliveau, A., Aktik, C., Gerdes, J.W. Jr

“…Semi-insulating samples of GaAs have been exposed to electron irradiation (7 Mev) in the fluence range 1 {times} 10{sup 10} to 1 {times} 10{sup 15} cm{sup…”
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Fabrication of ( NH 4 ) 2 S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition by Jaouad, A., Aimez, V., Aktik, Ç., Bellatreche, K., Souifi, A.

“…Metal-insulator-semiconductor (MIS) capacitors were fabricated on n- GaAs (100) substrate using ( NH 4 ) 2 S surface passivation and low-frequency…”
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