Search Results - "Akoglu, Busra Cankaya"

Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications by Imran Nawaz, Muhammad, Zafar, Salahuddin, Gurdal, Armagan, Cankaya Akoglu, Busra, Ozbay, Ekmel

“…Summary Cascode HEMTs exhibit high gain and broadband performance. Promising reverse transmission makes matching networks simpler and insensitive to impedance…”
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Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications by Zafar, Salahuddin, Cankaya Akoglu, Busra, Aras, Erdem, Yilmaz, Dogan, Nawaz, Muhammad Imran, Kashif, Ahsanullah, Ozbay, Ekmel

“…Summary In this paper, we present a highly robust GaN‐based X‐band low‐noise amplifier (LNA) showing promising small‐signal and noise performance as well as…”
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Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications by Hayat, Khizar, Zafar, Salahuddin, Mehmood, Tariq, Cankaya Akoglu, Busra, Ozbay, Ekmel, Kashif, Ahsan

“…This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class‐AB for L‐band…”
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A highly survivable X‐band low noise amplifier based on GaN HEMT technology and impact of pulse width on recovery time by Nawaz, Muhammad Imran, Zafar, Salahuddin, Akoglu, Busra Cankaya, Caglar, Gizem Tendurus, Hannan, Abdullah, Urfali, Emirhan, Aras, Erdem, Ozbay, Ekmel

“…GaN high electron mobility transistor (HEMT)‐based low noise amplifiers (LNAs) are an integral part of microwave receiver systems to enhance signal‐to‐noise…”
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AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity by Odabasi, Oguz, Yilmaz, Dogan, Aras, Erdem, Asan, Kubra Elif, Zafar, Salahuddin, Akoglu, Busra Cankaya, Butun, Bayram, Ozbay, Ekmel

“…In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions…”
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Design of GaN‐based X‐band LNAs to achieve sub‐1.2 dB noise figure by Zafar, Salahuddin, Aras, Erdem, Akoglu, Busra Cankaya, Tendurus, Gizem, Nawaz, Muhammad Imran, Kashif, Ahsanullah, Ozbay, Ekmel

“…GaAs and SiGe technologies take an edge over GaN‐based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design…”
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60W Stacked-HEMT Based Asymmetric X-Band GaN SPDT Switch for Single Chip T/R Modules by Erturk, Volkan, Gurdal, Armagan, Akoglu, Busra Cankaya, Ozbay, Ekmel

“…This paper presents a high-power, asymmetric single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) switch using high electron mobility…”
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X-band Cascode LNA with Bias-invariant Noise Figure using 0.15 µm GaN-on-SiC Technology by Nawaz, Muhammad Imran, Aras, Yunus Erdem, Zafar, Salahuddin, Akoglu, Busra Cankaya, Tendurus, Gizem, Ozbay, Ekmel

“…Cascode HEMTs exhibit better stability and broad bandwidths performance as compared with common source HEMTs. This paper presents the design of a single stage…”
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Four-Channel Microstrip based RF Switchable Filter for S-band Radar Applications by Shan, Muhammad Ali, Zafar, Salahuddin, Akoglu, Busra Cankaya, Ozbay, Ekmel, Kashif, Ahsan Ullah

“…Nowadays, electronic countermeasure (ECM) devices are widely used to mislead early warning radars. In an ECM system, an RF filter is a vital component to…”
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Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements by Zafar, Salahuddin, Durna, Yilmaz, Kocer, Hasan, Akoglu, Busra Cankaya, Aras, Yunus Erdem, Odabasi, Oguz, Butun, Bayram, Ozbay, Ekmel

“…This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave…”
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Unveiling T max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements by Zafar, Salahuddin, Durna, Yilmaz, Kocer, Hasan, Akoglu, Busra Cankaya, Aras, Yunus Erdem, Odabasi, Oguz, Butun, Bayram, Ozbay, Ekmel

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GaN Hemt Based Mmic Design and Fabrication for Ka-Band Applications by Akoğlu, Büşra Çankaya

“…Gallium Nitride (GaN) technology has recently dominated the high power applications in the mm-wave frequencies, and its commercial use is emerging with the…”
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