Search Results - "Akbar, Mohammad S."

Isolation and Characterization of Gut Bacterial Proteases Involved in Inducing Pathogenicity of Bacillus thuringiensis Toxin in Cotton Bollworm, Helicoverpa armigera by Regode, Visweshwar, Kuruba, Sreeramulu, Mohammad, Akbar S, Sharma, Hari C

“…toxin proteins are deployed in transgenic plants for pest management. The present studies were aimed at characterization of gut bacterial proteases involved in…”
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P0467 : Phenotypic distortion and functional anomaly of liver dendritic cells in presence of suppressor myeloid cells in a murine model of non-alcoholic fatty liver disease by Mohammad Fazle Akbar, S, Chen, S, Al-Mahtab, M, Hiasa, Y

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Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor by Rhee, Se Jong, Kang, Chang Yong, Kang, Chang Seok, Choi, Rino, Choi, Chang Hwan, Akbar, Mohammad S., Lee, Jack C.

“…A metal–oxide–semiconductor capacitor and field effect transistor with a hafnium oxide (HfO2) dielectric have been fabricated. Various thicknesses of…”
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Effect of NH3 surface nitridation temperature on mobility of ultrathin atomic layer deposited HfO2 by Akbar, Mohammad S., Moumen, Naim, Barnett, Joel, Sim, Johnny, Lee, Jack C.

“…Effect of NH3 predeposition anneal (pre-DA) temperature prior to ultrathin atomic layer deposition (ALD) HfO2 deposition (15–30 Å) on equivalent oxide…”
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Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors by Rhee, Se Jong, Kang, Chang Yong, Kang, Chang Seok, Choi, Chang Hwan, Choi, Rino, Akbar, Mohammad S., Lee, Jack C.

“…The characteristics of threshold voltage instability of HfO2 metal-oxide-semiconductor field-effect transistors under positive dynamic stress were…”
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Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y2O3/HfO2 gate dielectric by FENG ZHU, SE JONG RHEE, LEE, Jack C, CHANG YONG KANG, CHANG HWAN CHOI, AKBAR, Mohammad S, KRISHNAN, Siddarth A, MANHONG ZHANG, KIM, Hyoung-Sub, LEE, Tackwhi, OK, Injo

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A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique by Akbar, M.S., Choi, C.H., Rhee, S.J., Krishnan, S.A., Kang, C.Y., Zhang, M.H., Lee, T., Ok, I.J., Zhu, F., Kim, H.-S., Lee, J.C.

“…A novel stress-anneal approach has been investigated to separate the role of electrons and hole charge trappings in Hf-based gate oxides. It is observed that…”
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Electrical performance and reliability improvement by using compositionally varying bi-layer structure of PVD HfSixOy dielectric by AKBAR, Mohammad S, CHOI, C. H, LEE, Jack C, RHEE, S. J, KRISHNAN, S. A, KANG, C. Y, ZHANG, M. H, LEE, T, OK, I. J, ZHU, F, KIM, H.-S

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PMOS thin gate oxide recovery upon negative bias temperature stress by Akbar, M.S., Agostinelli, M., Rangan, S., Shing Lau, Castillo, C., Sangwoo Pae, Kashyap, S.

“…The recovery behavior of thin gate PMOS devices, under both static and dynamic stress conditions, has been investigated. It has been observed that the thin…”
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Threshold voltage instability of ultra-thin HfO2 NMOSFETs : Characteristics of polarity dependences by SE JONG RHEE, CHANG YONG KANG, YOUNG HEE KIM, CHANG SEOK KANG, CHO, Hag-Ju, CHOI, Rino, CHANG HWAN CHOI, AKBAR, Mohammad S, LEE, Jack C

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Optimization of precursor pulse time in improving bulk trapping characteristics of atomic-layer-deposition Hf O 2 gate oxides by Akbar, Mohammad S., Lee, Jack C., Moumen, Naim, Peterson, Jeff

“…We report that precursor Hf Cl 4 plays an important role in optimizing atomic-layer-deposition Hf O 2 bulk trapping characteristics. By systematic study, it…”
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Deep India meets deep Asia: Lithospheric indentation, delamination and break-off under Pamir and Hindu Kush (Central Asia) by Kufner, Sofia-Katerina, Schurr, Bernd, Sippl, Christian, Yuan, Xiaohui, Ratschbacher, Lothar, Akbar, Arib s/of Mohammad, Ischuk, Anatoly, Murodkulov, Shohrukh, Schneider, Felix, Mechie, James, Tilmann, Frederik

“…•We evaluate seismic data and derive a tectonic scenario for the Pamir–Hindu Kush.•Pamir–Hindu Kush host two opposite dipping zones of intermediate depth…”
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Optimization of precursor pulse time in improving bulk trapping characteristics of atomic-layer-deposition HfO2 gate oxides by Akbar, Mohammad S., Lee, Jack C., Moumen, Naim, Peterson, Jeff

“…We report that precursor HfCl4 plays an important role in optimizing atomic-layer-deposition HfO2 bulk trapping characteristics. By systematic study, it has…”
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Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid (500:1) post-deposition rinsing and its effect after high-pressure H2 anneal by Akbar, Mohammad S., Moumen, Naim, Barnett, Joel, Lee, Byoung Hun, Lee, Jack C.

“…We report that post-deposition rinsing of metalorganic-chemical-vapor-deposited Hf-silicate dielectric with HCl (500:1) improves mobility, bias instabilities,…”
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Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing by Nieh, R.E., Chang Seok Kang, Hag-Ju Cho, Onishi, K., Rino Choi, Krishnan, S., Jeong Hee Han, Young-Hee Kim, Akbar, M.S., Lee, J.C.

“…The electrical, material, and reliability characteristics of zirconium oxynitride (Zr-oxynitride) gate dielectrics were evaluated. The nitrogen (/spl sim/1.7%)…”
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Effect of NH 3 surface nitridation temperature on mobility of ultrathin atomic layer deposited HfO 2 by Akbar, Mohammad S., Moumen, Naim, Barnett, Joel, Sim, Johnny, Lee, Jack C.

“…Effect of NH 3 predeposition anneal (pre-DA) temperature prior to ultrathin atomic layer deposition (ALD) HfO 2 deposition (15-30 Å) on equivalent oxide…”
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Effects of high temperature forming gas anneal on the characteristics of metal-oxide-semiconductor field-effect transistor with HfO2 gate stack by Choi, Rino, Kang, Chang Seok, Cho, Hag-Ju, Kim, Young-Hee, Akbar, Mohammad S., Lee, Jack C.

“…The effects of high temperature forming gas (N2:H2=96:4) anneal (600 °C) prior to metallization have been evaluated in terms of the improvement in the carrier…”
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Optimized NH3 annealing Process for high-quality HfSiON gate oxide by Akbar, M.S, Cho, H.-J, Choi, R, Kang, C.S, Kang, C.Y, Choi, C.H, Rhee, S.J, Kim, Y.H, Lee, J.C

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Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid (500:1) post-deposition rinsing and its effect after high-pressure H 2 anneal by Akbar, Mohammad S., Moumen, Naim, Barnett, Joel, Lee, Byoung Hun, Lee, Jack C.

“…We report that post-deposition rinsing of metalorganic-chemical-vapor-deposited Hf-silicate dielectric with HCl (500:1) improves mobility, bias instabilities,…”
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Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n -metal-oxide-semiconductorfield-effect transistors by Kang, Chang Yong, Rhee, Se Jong, Choi, Chang Hwan, Kang, Chang Seok, Choi, Rino, Akbar, Mohammad S., Zhang, Manhong, Krishnan, Siddarth A., Lee, Jack C.

“…In this letter, we present the effects of the nitrogen-incorporated interface on threshold voltage shift ( Δ V th ) , which was induced by charge trapping and…”
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