Search Results - "Akatsuka, Masanori"
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Effect of Rapid Thermal Annealing on Oxygen Precipitation Behavior in Silicon Wafers
Published in Japanese Journal of Applied Physics (2001)“…The effect of rapid thermal annealing (RTA) on oxygen precipitation behavior in Czochralski silicon wafers was investigated with an emphasis on the RTA…”
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2
Pinning Effect of Punched-Out Dislocations in Carbon-, Nitrogen- or Boron-Doped Silicon Wafers
Published in Japanese Journal of Applied Physics (2001)“…The pinning effect of punched-out dislocations in carbon-, nitrogen- or boron-doped Czochralski-grown silicon wafers was investigated using an indentation…”
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3
Effect of oxide precipitate sizes on the mechanical strength of Czochralski silicon wafers
Published in Japanese Journal of Applied Physics (01-12-1997)“…The effect of oxide precipitate sizes on the mechanical strength of Czochralski silicon (CZ-Si) wafers has been studied with emphasis on the mechanism of slip…”
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4
Pinning effect on punched-out dislocations in silicon wafers investigated using indentation method
Published in Japanese Journal of Applied Physics (01-11-1997)“…The mechanical strength of silicon wafers was investigated using the indentation method. Sizes of rosette patterns L , generated during annealing at 900° C for…”
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5
Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment
Published in Japanese Journal of Applied Physics (01-10-1998)“…The relationship between the length of slip dislocation and applied stress in silicon wafers was investigated. Czochralski (CZ) silicon wafers [boron-doped,…”
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Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers
Published in Japanese Journal of Applied Physics (01-09-1998)“…The effect of oxide precipitate size on slip generation was investigated in Czochralski (CZ), p/p-, p/p+ and p/p++ epitaxial wafers during device…”
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7
Demonstration of high energy extraction efficiency in a laser-diode pumped high gain Nd:YAG regenerative amplifier
Published in Applied physics letters (07-03-1994)“…High energy extraction efficiency of 48±4% for the cavity mode cross section (17.5%±1% for the entire lasant cross section) and high energy gain of 71±1 dB…”
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Parametric Studies on the Laser-Diode-Pumped, Thermal-Lensing-Compensated, Mode-Locked, Q-Switched Nd:YAG Laser
Published in Japanese Journal of Applied Physics (1994)“…The parametric studies of a laser-diode (LD)-pumped, acousto-optic (AO)-mode-locked and Q-switched Nd:YAG laser were carried out. Adequate compensation for the…”
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Mechanical-stress induced Nd:YAG active quarter-wave plate
Published in Japanese Journal of Applied Physics (1994)“…A quarter-wave retardation was obtained by mechanically induced stress in a Nd:YAG laser rod and a laser gain of 1.15 at 1064 nm was obtained by pumping with a…”
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