Search Results - "Akatsuka, Masanori"

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  1. 1

    Effect of Rapid Thermal Annealing on Oxygen Precipitation Behavior in Silicon Wafers by Akatsuka, Masanori, Okui, Masahiko, Morimoto, Nobuyuki, Sueoka, Koji

    “…The effect of rapid thermal annealing (RTA) on oxygen precipitation behavior in Czochralski silicon wafers was investigated with an emphasis on the RTA…”
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    Journal Article
  2. 2

    Pinning Effect of Punched-Out Dislocations in Carbon-, Nitrogen- or Boron-Doped Silicon Wafers by Akatsuka, Masanori, Sueoka, Koji

    “…The pinning effect of punched-out dislocations in carbon-, nitrogen- or boron-doped Czochralski-grown silicon wafers was investigated using an indentation…”
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    Journal Article
  3. 3

    Effect of oxide precipitate sizes on the mechanical strength of Czochralski silicon wafers by SUEOKA, K, AKATSUKA, M, KATAHAMA, H, ADACHI, N

    Published in Japanese Journal of Applied Physics (01-12-1997)
    “…The effect of oxide precipitate sizes on the mechanical strength of Czochralski silicon (CZ-Si) wafers has been studied with emphasis on the mechanism of slip…”
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    Journal Article
  4. 4

    Pinning effect on punched-out dislocations in silicon wafers investigated using indentation method by AKATSUKA, M, SUEOKA, K, KATAHAMA, H, MORIMOTO, N, ADACHI, N

    Published in Japanese Journal of Applied Physics (01-11-1997)
    “…The mechanical strength of silicon wafers was investigated using the indentation method. Sizes of rosette patterns L , generated during annealing at 900° C for…”
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    Journal Article
  5. 5

    Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment by Akatsuka, Masanori, Sueoka, Koji, Katahama, Hisashi, Morimoto, Nobuyuki, Adachi, Naoshi

    Published in Japanese Journal of Applied Physics (01-10-1998)
    “…The relationship between the length of slip dislocation and applied stress in silicon wafers was investigated. Czochralski (CZ) silicon wafers [boron-doped,…”
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    Journal Article
  6. 6

    Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers by Akatsuka, Masanori, Sueoka, Koji, Katahama, Hisashi, Koie, Yasuo, Sadamitsu, Shinsuke

    Published in Japanese Journal of Applied Physics (01-09-1998)
    “…The effect of oxide precipitate size on slip generation was investigated in Czochralski (CZ), p/p-, p/p+ and p/p++ epitaxial wafers during device…”
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    Journal Article
  7. 7

    Demonstration of high energy extraction efficiency in a laser-diode pumped high gain Nd:YAG regenerative amplifier by Naito, Kenta, Ohmi, Masato, Ishikawa, Koji, Akatsuka, Masanori, Yamanaka, Masanobu, Nakatsuka, Masahiro, Nakai, Sadao, Sato, Tsuyoshi

    Published in Applied physics letters (07-03-1994)
    “…High energy extraction efficiency of 48±4% for the cavity mode cross section (17.5%±1% for the entire lasant cross section) and high energy gain of 71±1 dB…”
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  8. 8

    Parametric Studies on the Laser-Diode-Pumped, Thermal-Lensing-Compensated, Mode-Locked, Q-Switched Nd:YAG Laser by OHMI, M, NAITO, K, ISHIKAWA, K, AKATSUKA, M, SATO, T, YAMANAKA, M, NAKATSUKA, M, NAKAI, S

    “…The parametric studies of a laser-diode (LD)-pumped, acousto-optic (AO)-mode-locked and Q-switched Nd:YAG laser were carried out. Adequate compensation for the…”
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  9. 9

    Mechanical-stress induced Nd:YAG active quarter-wave plate by OHMI, M, AKATSUKA, M, ISHIKAWA, K, NAITO, K, YONEZAWA, Y, YAMANAKA, M, IZAWA, Y, NAKAI, S

    “…A quarter-wave retardation was obtained by mechanically induced stress in a Nd:YAG laser rod and a laser gain of 1.15 at 1064 nm was obtained by pumping with a…”
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