Search Results - "Akasaki, I"

Evidence for two Mg related acceptors in GaN by Monemar, B, Paskov, P P, Pozina, G, Hemmingsson, C, Bergman, J P, Kawashima, T, Amano, H, Akasaki, I, Paskova, T, Figge, S, Hommel, D, Usui, A

“…The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically grown on bulk GaN templates, to avoid strain broadening of…”
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Quasi-ballistic thermal conduction in 6H–SiC by Cheng, Z., Lu, W., Shi, J., Tanaka, D., Protik, N.H., Wang, S., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Graham, S.

“…The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean…”
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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification by Okada, N., Kato, N., Sato, S., Sumii, T., Nagai, T., Fujimoto, N., Imura, M., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Maruyama, H., Takagi, T., Noro, T., Bandoh, A.

“…Various procedures, such as using a buffer layer or multi-growth mode modification, were investigated for the growth of AlN layers on sapphire substrate at…”
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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy by Imura, M., Nakano, K., Kitano, T., Fujimoto, N., Narita, G., Okada, N., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Shimono, K., Noro, T., Takagi, T., Bandoh, A.

“…A high-quality thick AlN layer without cracks was grown on sapphire by the combination of the high-temperature metal-organic vapor phase epitaxial growth and…”
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One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters by Iida, D., Miura, A., Okadome, Y., Tsuchiya, Y., Kawashima, T., Nagai, T., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

“…Low defect density a ‐plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a ‐plane GaN…”
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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE by Okada, N., Kato, N., Sato, S., Sumii, T., Fujimoto, N., Imura, M., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Takagi, T., Noro, T., Bandoh, A.

“…Epitaxial lateral overgrowth (ELO) of a-plane AlN (a-AlN) has been carried out on patterned a-AlN by high-temperature metal-organic vapor phase epitaxy…”
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Reduction in defect density over whole area of (1$ bar 1 $00) m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth by Kawashima, T., Nagai, T., Iida, D., Miura, A., Okadome, Y., Tsuchiya, Y., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

“…We succeeded in growing low‐defect‐density m ‐plane GaN on grooved m ‐plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were…”
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Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy by Wetzel, C., Takeuchi, T., Yamaguchi, S., Katoh, H., Amano, H., Akasaki, I.

“…The optical band gap in 40 nm Ga1−xInxN/GaN single heterostructures is investigated in the composition range 0<x<0.2 by photoreflection spectroscopy (PR) at…”
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Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure by Iwaya, M., Kasugai, H., Kawashima, T., Iida, K., Honshio, A., Miyake, Y., Kamiyama, S., Amano, H., Akasaki, I.

“…Group III nitride-based blue light-emitting diodes with a moth-eye structure at the bottom of a semi-insulating transport 6H-SiC substrate were fabricated…”
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Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates by Nakano, K., Imura, M., Narita, G., Kitano, T., Hirose, Y., Fujimoto, N., Okada, N., Kawashima, T., Iida, K., Balakrishnan, K., Tsuda, M., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

“…Epitaxial lateral overgrowth (ELO) of low‐dislocation‐density AlN layers on trench‐patterned sapphire substrates is demonstrated for the first time. Sapphire…”
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Pit formation in GaInN quantum wells by Chen, Y., Takeuchi, T., Amano, H., Akasaki, I., Yamada, N., Kaneko, Y., Wang, S. Y.

“…The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits…”
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Microstructure of thick AlN grown on sapphire by high-temperature MOVPE by Imura, M., Nakano, K., Kitano, T., Fujimoto, N., Okada, N., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Shimono, K., Noro, T., Takagi, T., Bandoh, A.

“…Thick AlN layers with atomically flat surfaces were successfully grown directly on sapphire substrates by metal‐organic vapor phase epitaxy at high…”
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Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire by Bell, A., Liu, R., Ponce, F. A., Amano, H., Akasaki, I., Cherns, D.

“…Distinct crystalline and optical properties have been observed in Mg-doped Al0.03Ga0.97N grown on a patterned sapphire substrate; the pattern consisting of…”
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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates by Pozina, G., Paskov, P. P., Bergman, J. P., Hemmingsson, C., Hultman, L., Monemar, B., Amano, H., Akasaki, I., Usui, A.

“…Metastability of near band gap UV emissions in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on thick GaN templates grown by halide vapor…”
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Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer by DETCHPROHM, T, HIRAMATSU, K, AMANO, H, AKASAKI, I

“…In hydride vapor phase epitaxial (HVPE) growth of GaN, the sputtered ZnO layer has been found to be one of the best buffer layers because of the fact that…”
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Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates by KAWASHIMA, T, NAGAI, T, IIDA, D, MIURA, A, OKADOME, Y, TSUCHIYA, Y, IWAYA, M, KAMIYAMA, S, AMANO, H, AKASAKI, I

“…We succeeded in growing low-defect-density GaN and Al0.18Ga0.82N on a grooved m-plane GaN by optimizing growth conditions. A reduction in the density of…”
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Determination of the conduction band electron effective mass in hexagonal GaN by DRECHSLER, M, HOFMANN, D. M, MEYER, B. K, DETCHPROHM, T, AMANO, H, AKASAKI, I

“…The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance…”
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p -type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy by Tanaka, T., Watanabe, A., Amano, H., Kobayashi, Y., Akasaki, I., Yamazaki, S., Koike, M.

“…Temperature dependences of the hole concentration and Hall mobility in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy were measured…”
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer by Amano, H., Sawaki, N., Akasaki, I., Toyoda, Y.

“…Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN…”
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Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques by Chichibu¥, S. F., Uedono, A., Onuma, T., Haskell, B. A., Chakraborty, A., Koyama, T., Fini, P. T., Keller, S., Denbaars, S. P., Speck, J. S., Mishra, U. K., Nakamura, S., Yamaguchi, S., Kamiyama, S., Amano, H., Akasaki, I., Han, J., Sota, T.

“…A principal origin of the defect-insensitive emission probability of In-containing three-dimensional (3-D) bulk (Al,In,Ga)N alloy films, such as InGaN, AlInN…”
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