Search Results - "Akano, U. G."

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  1. 1

    Oxidation Kinetics of Mg-, Si-, and Fe-Implanted Aluminum by Using X-ray Photoelectron Spectroscopy by Do, T, McIntyre, N. S, van der Heide, P. A. W, Akano, U. G

    Published in The journal of physical chemistry. B (01-04-1999)
    “…The oxidation kinetics of Mg-, Si-, and Fe-implanted aluminum has been studied at room temperature and a water vapor pressure of 2.0 × 10-6 Pa using X-ray…”
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    Journal Article
  2. 2

    Influence of dose rate and temperature on the accumulation of Si-implantation damage in indium phosphide by AKANO, U. G, MITCHELL, I. V, SHEPHERD, F. R

    Published in Applied physics letters (05-04-1993)
    “…The influence of dose rate and temperature on the implantation damage accumulation in InP has been investigated. InP crystals were implanted at 80–323 K with…”
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    Journal Article
  3. 3

    Implant‐damage isolation of InP and InGaAsP by Akano, U. G., Mitchell, I. V., Shepherd, F. R., Miner, C. J., Rousina, R.

    “…The creation of high resistivity layers by ion implantation of doped InP and InGaAsP epilayers, and the potential of the implant‐isolation technique for the…”
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    Conference Proceeding Journal Article
  4. 4

    Room-temperature annealing of Si implantation damage in InP by AKANO, U. G, MITCHELL, I. V, SHEPHERD, F. R

    Published in Applied physics letters (11-11-1991)
    “…Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature…”
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    Journal Article
  5. 5

    Annealing and activation of Si implanted InP by Akano, U. G., Mitchell, I. V., Shepherd, F. R., Miner, C. J.

    “…The recovery of implant damage, and the activation of Si implanted into InP has been studied over a range of post‐implant anneal temperatures from 295 to 1095…”
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    Conference Proceeding Journal Article
  6. 6

    Quasi-phase matched second-harmonic generation in an AlxGa1−xAs asymmetric quantum-well waveguide using ion-implantation-enhanced intermixing by Bouchard, Jean-Pierre, Têtu, M., Janz, S., Xu, D.-X., Wasilewski, Z. R., Piva, P., Akano, U. G., Mitchell, I. V.

    Published in Applied physics letters (25-12-2000)
    “…Quasi-phase matched second-harmonic generation in the copropagating geometry is demonstrated in an asymmetric quantum-well waveguide. Modulation of the…”
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    Journal Article
  7. 7

    Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing by Janz, S., Buchanan, M., van der Meer, P., Wasilewski, Z. R., Xu, D.-X., Piva, P., Mitchell, I. V., Akano, U. G., Fiore, A.

    Published in Applied physics letters (15-06-1998)
    “…The change in the second-order nonlinear susceptibility of an asymmetric quantum well (AQW) superlattice induced by ion beam-enhanced intermixing has been…”
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    Journal Article
  8. 8

    Ion implantation damage of InP and InGaAs by Akano, U.G., Mitchell, I.V., Shepherd, F.R., Miner, C.J.

    “…The damage accumulation and annealing processes in ion bombarded InP and InGaAs have been studied. Epitaxial InGaAs layers on (100) oriented InP and InP…”
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    Journal Article
  9. 9

    Ion-beam mixing of Ni/Pd layers: I. Cascade mixing regime (low temperature) by Akano, U. G., Thompson, D. A., Davies, J. A., Smeltzer, W. W.

    Published in Journal of materials research (01-12-1988)
    “…A tomic mixing resulting from heavy-ion bombardment of thin-film Ni/Pd bilayers and thin Pd markers sandwiched between Ni layers has been investigated. Mixing…”
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    Journal Article
  10. 10

    Ion-beam mixing of Ni/Pd layers: II. Thermally assisted regime (>500K) by Akano, U. G., Thompson, D. A., Smeltzer, W. W., Davies, J. A.

    Published in Journal of materials research (01-12-1988)
    “…Atomic mixing in Ni/Pd bilayer films due to 120 keV Ar+ irradiation in the thermally assisted regime (523−673 K) has been measured, in situ, using Rutherford…”
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    Journal Article
  11. 11

    Nonlinear optical response of As+-ion implanted GaAs studied using time resolved reflectivity by Janz, S., Akano, Usman G., Mitchell, Ian V.

    Published in Applied physics letters (03-06-1996)
    “…The transient reflectivity response of GaAs with a 2% excess As concentration (GaAs:As), prepared by As+ ion implantation, has been measured at photon energies…”
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    Journal Article
  12. 12
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