Search Results - "Ajjel, R."

Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements by Hamdaoui, N., Ajjel, R., Salem, B., Gendry, M.

“…The current–voltage characteristics of metal/n-InAlAs Schottky diodes were determined in the temperature range 90–300K. Analysis of the measured…”
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Prediction study of structural, thermal, and optical characterization of Co0.6Zn0.4Fe2O4 cubic spinel synthesized via sol–gel method for energy storage by Messaoudi, A., Omri, Aref, Benali, A., Ghebouli, M. A., Djemli, A., Fatmi, M., Habila, A., Alothman, Asma A., Hamdaoui, N., Ajjel, R., Costa, B. F. O., Graca, M. F. P., Khirouni, K.

“…In this comprehensive study, we synthesized Co 0.6 Zn 0.4 Fe 2 O 4 cubic spinel via the sol–gel method and characterized its structural, thermal, and optical…”
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Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques by Hamdaoui, N., Ajjel, R., Salem, B., Gendry, M., Maaref, H.

“…Capacitance–voltage and deep level transient spectroscopy were used to study the capture characteristics of self-assembled InAs/InAlAs quantum dots grown on…”
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Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers by AJJEL, R, BAIRA, M, HELLARA, J, MAAREF, H, SALEM, B, BREMOND, G, GENDRY, M

“…Deep level transient spectroscopy (DLTS) technique at low temperature has been performed to study the electrical properties of the In0.52Al0.48As epilayer…”
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Dielectric and structural properties of Co0.6Zn0.4Fe2O4 nanoferrites: sol–gel synthesis by Messaoudi, A., Omri, Aref, Benali, A., Ghebouli, M. A., Djemli, A., Fatmi, M., Hamdaoui, N., Ajjel, R., Habila, M., Alothman, Asma A., Mohammad, Saikh, Costa, B. F. O., Graca, M. F. P., Khirouni, K.

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Electron traps in metalorganic chemical vapor deposition grown Al0.2Ga0.8As by AJJEL, R, BOUZRARA, L, ZAÏDI, M. A, MAAREF, H, BREMOND, G

“…The effect of the growth temperature on deep electron traps present in n-type Al0.2Ga0.8As layers grown by metalorganic chemical vapor deposition was…”
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Tunnelling current in Schottky diodes containing InAs quantum dots by Hamdaoui, N., Ajjel, R., Salem, B., Gendry, M.

“…► Transport mechanism in Schottky diode containing InAs quantum dots is investigated. ► Field emission was observed at low temperature and low voltages bias…”
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Electrical field effect on the optical threshold energy of donor and acceptor levels in chromium-doped GaP by Ajjel, R, Zaı̈di, M.A, Maaref, H, Zerraı̈, A, Brémond, G, Ulrici, W

“…The electrical field effect on the optical threshold energy have been studied using electrical deep level optical spectroscopy technique. The measurements were…”
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Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP by Ajjel, R., Zaidi, M. A., Alaya, S., Brémond, G., Guillot, G., Bourgoin, J. C.

“…The electrical properties of chromium-related defects in GaP are investigated. Using deep-level transient spectroscopy, a related deep level is observed in…”
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Electrical and Optical Properties of Chromium Doped GaP by Ajjel, R., Maaref, H., Zerraï, A., Brémond, G., Ulrici, W.

“…The electrical properties of p‐type GaP:Cr:Zn and n‐type GaP:Cr:S samples have been studied using Deep Level Transient Spectroscopy (DLTS). In GaP:Cr:Zn a deep…”
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Electric field effect on the electron emission from Te-DX in AlxGa1−xAs by Bouzrara, L., Ajjel, R., Mejri, H., Zaidi, M.A., Maaref, H.

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Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001) by Baira, M., Ajjel, R., Maaref, H., Salem, B., Brémond, G., Gendry, M., Marty, O.

“…Capacitance–voltage, C( V) studies have been carried out on Schottky barrier structure containing a sheet of self-organized InAs quantum dots (QDs) grown on…”
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Excitonic recombination processes in GaAs grown by close-space vapour transport by Bouzrara, L, Ajjel, R, Mejri, H, Zaidi, M.A, Alaya, S, Mimila-Arroyo, J, Maaref, H

“…Epitaxial GaAs layers were grown using the close-space vapour transport. From deep level transient spectroscopy measurements, the native EL2 donor has been…”
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Deep level transient spectroscopy studies at low temperature of In 0.52Al 0.48As epilayers by Ajjel, R., Baira, M., Hellara, J., Maaref, H., Salem, B., Brémond, G., Gendry, M.

“…Deep level transient spectroscopy (DLTS) technique at low temperature has been performed to study the electrical properties of the In 0.52Al 0.48As epilayer…”
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FT-DLTS studies on deep levels in InAs quantum dashes grown on InP by Zouaoui, M., Regreny, P., Ajjel, R., Girard, P., Gendry, M., Bremond, G.

“…In this paper, we present a DLTS (Deep Level Transient Spectroscopy) study on InAs quantum dashes (QDas) grown by solid source molecular beam epitaxy on…”
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Electron traps in metalorganic chemical vapor deposition grown Al 0.2Ga 0.8As by Ajjel, R, Bouzrara, L, Zaı̈di, M.A, Maaref, H, Brémond, G

“…The effect of the growth temperature on deep electron traps present in n-type Al 0.2Ga 0.8As layers grown by metalorganic chemical vapor deposition was…”
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Electrical properties of GaAs–Al0.46Ga0.54As superlattice within a wider quantum well by Ajjel, R., Maaref, H.

“…We report on electrical studies preformed on GaAs–Al0.46Ga0.54As superlattice (SL) with a wider quantum well (QW) embedded in the middle of the structure. We…”
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Electric field effect on the electron emission from Te-DX in Al x Ga 1− x As by Bouzrara, L., Ajjel, R., Mejri, H., Zaidi, M.A., Maaref, H.

“…The present work is aimed to investigate the electron emission from DX centers in tellurium-doped Al x Ga 1− x As with aluminium composition x = 0.40 using…”
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Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(001) by Saad, O., Baira, M., Ajjel, R., Maaref, H., Salem, B., Brémond, G., Gendry, M.

“…The electronic properties of InAs quantum dots (QDs) grown on InAlAs/InP(001) were studied by using capacitance–voltage (C–V) analysis and photoluminescence…”
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Alloy splitting of Te-DX in AlxGa1−xAs analysis using the deep level transient spectroscopy technique by Bouzrara, L., Ajjel, R., Mejri, H., Zaidi, M.A., Maaref, H.

“…The paper reports on a deep level transient spectroscopy analysis of Te-related DX centers in AlxGa1−xAs with aluminum composition x=0.40. As was shown from…”
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