Search Results - "Aizawa, Koji"

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    High-intensity airborne sound generated by irradiation of nanosecond laser pulse to water-immersed optical absorber by Miyazaki, Kota, Aizawa, Koji

    Published in Japanese Journal of Applied Physics (01-07-2023)
    “…A high-intensity and small-size laser-induced airborne sound source was developed for application to non-contact and non-destructive testing. A laser target…”
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    Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors by Aizawa, Koji, Park, Byung-Eun, Kawashima, Yoshihito, Takahashi, Kazuhiro, Ishiwara, Hiroshi

    Published in Applied physics letters (11-10-2004)
    “…Electrical properties of the p-channel metal-ferroelectric-insulator-silicon field-effect transistors (MFISFETs) using Pt∕SrBi2Ta2O9(SBT)∕HfO2∕Si and…”
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    Effect of a cylindrical waveguide on extracting a high-intensity pressure pulse and on irradiating it to adherent cells by Aizawa, Koji, Kobayashi, Takumi

    Published in Japanese Journal of Applied Physics (01-06-2020)
    “…To prevent the breaking of the culture dish from the impact of bubble growth around a pressure source, we experimentally investigated the effect of doubly…”
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    Estimation methodology for amplitude of second-order harmonic in nonlinear surface acoustic wave measured by optical diffraction method by Tokunaga, Yoshiaki, Ishimaru, Yukihiro, Yoshimura, Masatoshi, Aizawa, Koji, Minamide, Akiyuki

    Published in Optical review (Tokyo, Japan) (01-03-2010)
    “…An estimation methodology for amplitude from the fundamental to fourth-order harmonic composed of nonlinear surface acoustic waves on a LiNbO 3 substrate with…”
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    Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films by Aizawa, Koji, Tokumitsu, Eisuke, Okamoto, Kojiro, Ishiwara, Hiroshi

    Published in Applied physics letters (01-05-2000)
    “…An annealing method for preparing SrBi2Ta2O9 (SBT) thin films, a face-to-face annealing method, is proposed, and its effectiveness is demonstrated. In this…”
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    Praseodymium-Substituted Strontium Bismuth Tantalate Films with Saturated Remanent Polarization at 1 V by Aizawa, Koji, Ishiwara, Hiroshi

    Published in Japanese Journal of Applied Physics (15-07-2003)
    “…Sr-deficient and praseodymium-substituted SrBi2Ta2O9 (SPrBT) films with a saturated remanent polarization of as low as 1 V were prepared on Pt/Ti/SiO2/Si…”
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    Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films by Aizawa, Koji, Ishiwara, Hiroshi

    Published in Japanese Journal of Applied Physics (01-01-2000)
    “…The correlation between ferroelectricity and grain structures of sol-gel-derived strontium bismuth tantalate (SBT) thin films prepared by face-to-face…”
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  10. 10

    Fabrication and characterization of mfsfet arrays using Al/BaMgF4/Si(111) structures by Aizawa, Koji, Ishiwara, Hiroshi

    Published in Integrated ferroelectrics (01-11-1999)
    “…Metal-ferroelectric-semiconductor field-effect-transistor (MFSFET) arrays were fabricated using Al/BaMgF 4 /Si(111) structures, for the first time, and their…”
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    Electrical Properties of Ferroelectric BaMgF 4 Films on Si Substrates by Koji Aizawa, Koji Aizawa, Hiroshi Ishiwara, Hiroshi Ishiwara

    Published in Japanese Journal of Applied Physics (01-09-1994)
    “…Electrical properties of (120)-oriented BaMgF 4 films grown on n-Si(111) substrates have been investigated. It has been found that capacitance-voltage ( C - V…”
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    Fabrication and characterization of metal-ferroelectrics-semiconductor field effect transistors using epitaxial bamgf4 films grown on si(111) substrates by Aizawa, Koji, Okamoto, Tomoyuki, Tokumitsu, Eisuke, Ishihwara, Hiroshi

    Published in Integrated ferroelectrics (01-02-1997)
    “…Metal-ferroelectrics-semiconductor field effect transistors (MFS FETs) were fabricated using ferroelectric BaMgF 4 (BMF) films epitaxially grown on Si(111)…”
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    Reduction of Pyrochlore Phase and Pronounced Improvement of Ferroelectric Properties in Ultrathin SrBi 2 Ta 2 O 9 Films Derived from Bi-Rich Sol–Gel Solution by Aizawa, Koji, Ishiwara, Hiroshi

    Published in Japanese Journal of Applied Physics (01-08-2005)
    “…The crystallinity and ferroelectric properties of sol–gel-derived sub-100-nm-thick SrBi 2 Ta 2 O 9 (SBT) films with different Bi contents were investigated…”
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    Ferroelectric Properties of Pt/Pb 5 Ge 3 O 11 /Pt and Pt/Pb 5 Ge 3 O 11 /HfO 2 /Si Structures by Ohara, Shuichiro, Aizawa, Koji, Ishiwara, Hiroshi

    Published in Japanese Journal of Applied Physics (01-09-2005)
    “…The ferroelectric properties of metal–ferroelectric–metal (MFM) capacitors with a Pt/Pb 5 Ge 3 O 11 (PGO)/Pt structure and…”
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