Search Results - "Aitkhozhin, S. A."

Bridgman Growth of NiSb Single Crystals by Ogarev, D. A., Aitkhozhin, S. A., Temirov, Yu. Sh, Palkina, K. K., Shchamkhalov, K. A., Marenkin, S. F.

“…Structurally perfect NiSb single crystals =25 mm in diameter and 250 mm in length were grown by the Bridgman method. Polishing etch compositions were selected…”
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Epitaxial growth of GaAs thin layers on NiSb substrates by Aitkhozhin, S. A., Artemov, A. S., Belousov, P. S., Bobylev, M. A., Kaevitser, E. V., Lyubchenko, V. E., Petrov, K. P., Temirov, Yu. Sh, Farafonov, S. B.

“…We report the growth of gallium arsenide epilayers on the surface of single-crystal NiSb having metallic conduction. The gallium arsenide epilayers were grown…”
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General orientational characteristics of heteroepitaxial layers of AIIBVI semiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV) by Kuznetsov, G. F., Aitkhozhin, S. A.

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A high-sensitivity receiver of submillimeter radiation based on n-GaAs by Afinogenov, V. M., Aitkhozhin, S. A., Strakhov, V. A., Telegin, A. A., Trifonov, V. I.

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