Search Results - "Aidla, Aleks"

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  1. 1

    Atomic layer deposition of epitaxial HfO2 thin films on r-cut sapphire by Mändar, Hugo, Rammula, Raul, Aidla, Aleks, Aarik, Jaan

    Published in Journal of materials research (14-07-2013)
    “…Textured epitaxial HfO2 thin films of monoclinic structure were grown on r-cut Al2O3 by atomic layer deposition from HfCl4 and H2O at temperatures 450–750 °C…”
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    Journal Article
  2. 2

    Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen by Kukli, Kaupo, Aarik, Jaan, Aidla, Aleks, Jõgi, Indrek, Arroval, Tõnis, Lu, Jun, Sajavaara, Timo, Laitinen, Mikko, Kiisler, Alma-Asta, Ritala, Mikko, Leskelä, Markku, Peck, John, Natwora, Jim, Geary, Joan, Spohn, Ronald, Meiere, Scott, Thompson, David M.

    Published in Thin solid films (31-01-2012)
    “…Ru thin films were grown on hydrogen terminated Si, SiO2, Al2O3, HfO2, and TiO2 surfaces by atomic layer deposition from bis(2,5-dimethylpyrrolyl)ruthenium…”
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    Journal Article
  3. 3

    Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process by Aarik, Jaan, Aidla, Aleks, Uustare, Teet, Ritala, Mikko, Leskelä, Markku

    Published in Applied surface science (01-07-2000)
    “…Atomic layer deposition (ALD) of titanium oxide from titanium isopropoxide (Ti(OCH(CH 3) 2) 4) and water as well as from Ti(OCH(CH 3) 2) 4 and hydrogen…”
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    Journal Article
  4. 4

    Anomalous effect of temperature on atomic layer deposition of titanium dioxide by Aarik, Jaan, Aidla, Aleks, Mändar, Hugo, Sammelselg, Väino

    Published in Journal of crystal growth (01-12-2000)
    “…A strong influence of growth temperature on the deposition rate and refractive index of TiO 2 thin films, grown by atomic layer deposition from TiCl 4 and H…”
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    Journal Article
  5. 5

    Atomic layer deposition of high capacitance density Ta2O5-ZrO2 based dielectrics for metal-insulator-metal structures by JOGI, Indrek, KUKLI, Kaupo, RITALA, Mikko, LESKELÄ, Markku, AARIK, Jaan, AIDLA, Aleks, JUN LU

    Published in Microelectronic engineering (01-02-2010)
    “…The electrical properties of laminated atomic layer deposited films (ZrO2-Ta2O5, ZrO2-Nb2O5-Ta2O5, ZrO2-TaxNb1-xO5 and Ta2O5-ZrxNbyOz) were studied. Even…”
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    Journal Article
  6. 6

    Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene by Kukli, Kaupo, Aarik, Jaan, Aidla, Aleks, Uustare, Teet, Jõgi, Indrek, Lu, Jun, Tallarida, Massimo, Kemell, Marianna, Kiisler, Alma-Asta, Ritala, Mikko, Leskelä, Markku

    Published in Journal of crystal growth (01-06-2010)
    “…Ru thin films were grown on TiO 2, Al 2O 3, HfO 2, and ZrO 2 films as well as on HF-etched silicon and SiO 2-covered silicon by atomic layer deposition from…”
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    Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide by Kukli, Kaupo, Forsgren, Katarina, Aarik, Jaan, Uustare, Teet, Aidla, Aleks, Niskanen, Antti, Ritala, Mikko, Leskelä, Markku, Hårsta, Anders

    Published in Journal of crystal growth (01-09-2001)
    “…ZrO 2 films were grown on Si and SiO 2 substrates in the temperature range of 250–500°C using atomic layer deposition (ALD) technique. ZrI 4 and H 2O–H 2O 2…”
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    Journal Article
  13. 13

    Properties of tantalum oxide thin films grown by atomic layer deposition by Kukli, Kaupo, Aarik, Jaan, Aidla, Aleks, Kohan, Oksana, Uustare, Teet, Sammelselg, Väino

    Published in Thin solid films (15-05-1995)
    “…Thin tantalum oxide films were deposited using atomic layer deposition from TaCl 5 and H 2O at temperatures in the range 80–500 °C. The films deposited at…”
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    Journal Article
  14. 14

    Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process by Aarik, Jaan, Aidla, Aleks, Sammelselg, Väino, Uustare, Teet

    Published in Journal of crystal growth (01-11-1997)
    “…The role of precursor doses and purge times on the atomic layer deposition (ALD) of high-density α-PbO2-type TiO2 polymorph (TiO2-II) is studied. It has been…”
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    Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition by Sammelselg, Väino, Netšipailo, Ivan, Aidla, Aleks, Tarre, Aivar, Aarik, Lauri, Asari, Jelena, Ritslaid, Peeter, Aarik, Jaan

    Published in Thin solid films (02-09-2013)
    “…Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were…”
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    Journal Article
  18. 18

    Atomic layer deposition of epitaxial HfO 2 thin films on r -cut sapphire by Mändar, Hugo, Rammula, Raul, Aidla, Aleks, Aarik, Jaan

    Published in Journal of materials research (14-07-2013)
    “…Textured epitaxial HfO 2 thin films of monoclinic structure were grown on r-cut Al 2 O 3 by atomic layer deposition from HfCl 4 and H 2 O at temperatures…”
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    Journal Article
  19. 19

    Atomic layer deposition of epitaxial HfO sub(2) thin films on r-cut sapphire by Maendar, Hugo, Rammula, Raul, Aidla, Aleks, Aarik, Jaan

    Published in Journal of materials research (14-07-2013)
    “…Textured epitaxial HfO2 thin films of monoclinic structure were grown on r-cut Al2O3 by atomic layer deposition from HfCl4 and H2O at temperatures 450750 DGC…”
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    Journal Article
  20. 20

    Influence of process parameters on atomic layer deposition of ZrO2 thin films from CpZr(NMe2)3 and H2O by Aarik, Lauri, Alles, Harry, Aidla, Aleks, Kahro, Tauno, Kukli, Kaupo, Niinistö, Jaakko, Mändar, Hugo, Tamm, Aile, Rammula, Raul, Sammelselg, Väino, Aarik, Jaan

    Published in Thin solid films (28-08-2014)
    “…Atomic layer deposition of ZrO2 films from tris(dimethylamino)cyclopentadienylzirconium CpZr(NMe2)3 and H2O, was investigated using real-time characterization…”
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    Journal Article