Under-Bump Metallization Contact Resistance ( R ) Characterization at 10- \mu \text Polymer Passivation Opening

Under-Bump Metallization Contact Resistance ( R ) Characterization at 10- \mu \text Polymer Passivation Opening

Under-bump metallization R c is a critical metric for high-density interconnect in electronic devices. We developed a test vehicle to characterize the impact of unit processes on R c for 10-μm polymer passivation opening. We demonstrate that advanced preclean is necessary to achieve low (R c <; 2...

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Bibliographic Details
Published in:IEEE transactions on components, packaging, and manufacturing technology (2011) Vol. 7; no. 10; pp. 1592 - 1597
Main Authors: Lianto, Prayudi, King-Jien Chui, Bhushan, Bharat, Chua, H. M. Calvin, Leijun Tang, Chandra Rao, B. S. S., Xin Wang, Ai Long Wu, Yu Gu, Guan Huei See, Sundarrajan, Arvind
Format: Journal Article
Language:English
Published: Piscataway IEEE 01-10-2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Al oxide
Al pad
Contact resistance
contact resistance (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Rc )
Electronic devices
Impact strength
Metallizing
Metals
organometallic
outgassing
Passivation
Passivity
polymer
Polymers
preclean
Purging
Residual gas
Resistance
Silicon compounds
Test vehicles
under-bump metallization (UBM)
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Description
Summary:Under-bump metallization R c is a critical metric for high-density interconnect in electronic devices. We developed a test vehicle to characterize the impact of unit processes on R c for 10-μm polymer passivation opening. We demonstrate that advanced preclean is necessary to achieve low (R c <; 20 mQ) for future node extendibility, owing to reduction of both Al oxide and organometallic formation. This is achievable through a combination of low-temperature (<;100°C) preclean and fast residual gas purging from the chamber. A mechanism is proposed to explain the role of preclean in R c performance. Influence of SiN etch on R c is also investigated, and it was found that Cl-chemistry is better than F-chemistry to achieve low R c .
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2017.2726118