Search Results - "Ai, Yujie"
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AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template
Published in Journal of alloys and compounds (25-07-2019)“…We demonstrate 297.5-nm AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) grown on a high-temperature annealed (HTA) sputtered AlN template upon…”
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2
Metabolic profiling and transcriptome analysis provide insights into the accumulation of flavonoids in chayote fruit during storage
Published in Frontiers in nutrition (Lausanne) (27-02-2023)“…Chayote ( ) fruits are rich in flavonoids, folate, and low-calorie food. However, studies about the flavonoids and the corresponding regulatory mechanism of…”
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An Experimental and Theoretical Study of Impact of Device Parameters on Performance of AlN/Sapphire-Based SAW Temperature Sensors
Published in Micromachines (Basel) (28-12-2021)“…The impact of device parameters, including AlN film thickness ( ), number of interdigital transducers ( ), and acoustic propagation direction, on the…”
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Rapid Determination of the Monosaccharide Composition and Contents in Tea Polysaccharides from Yingshuang Green Tea by Pre-Column Derivatization HPLC
Published in Journal of chemistry (01-01-2016)“…A pre-column derivatization high-performance liquid chromatography (HPLC) method was developed and optimized to characterize and quantify the monosaccharides…”
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Experimental Demonstration of Current Mirrors Based on Silicon Nanowire Transistors for Inversion and Subthreshold Operations
Published in IEEE transactions on electron devices (01-10-2011)“…In this brief, the silicon nanowire transistor (SNWT)-based circuits of current mirrors (NWCMs) have been successfully fabricated for the first time. The key…”
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Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing
Published in Journal of materials science. Materials in electronics (01-08-2018)Get full text
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7
Two-Dimensional Self-Limiting Wet Oxidation of Silicon Nanowires: Experiments and Modeling
Published in IEEE transactions on electron devices (01-09-2013)“…In this paper, a CMOS compatible silicon nanowire (Si NW) fabrication method on bulk silicon substrate is carried out using the self-limiting oxidation (SLO)…”
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Top-down fabrication of shape controllable Si nanowires based on conventional CMOS process
Published in Physica. E, Low-dimensional systems & nanostructures (01-11-2010)“…Shape controllable silicon nanowires (SiNWs) have been fabricated with CMOS compatible top-down fabrication process by carefully designing the oxidation…”
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Effect of different drying methods on the sensory quality and chemical components of black tea
Published in Food science & technology (01-01-2019)“…This study investigated the effects of conventional hot-air drying, microwave drying, far-infrared drying, halogen lamp drying and halogen lamp-microwave…”
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10
Growth and characterization of the InN film ammonification technique
Published in Physica. E, Low-dimensional systems & nanostructures (2008)“…InN film was synthesized by ammoniating indium film on Si(1 1 1) substrates. The samples were analyzed by X-ray diffraction (XRD), X-ray photo-electron…”
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Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling
Published in 2011 IEEE Custom Integrated Circuits Conference (CICC) (01-09-2011)“…The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered as one of the best candidates for ultimately scaled CMOS devices at the end of the…”
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Conference Proceeding -
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Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering
Published in Journal of crystal growth (01-07-2006)“…GaN nanorods were synthesized by ammoniating Ga2O3/BN films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. X-ray…”
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Growth and characterization of high-quality GaN nanowires by ammonification technique
Published in Physica. E, Low-dimensional systems & nanostructures (01-12-2005)“…GaN nanowires were successfully synthesized at high quality and large yield on Si (1 1 1) substrate through ammoniating Ga 2O 3/BN films deposited by radio…”
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14
Novel Bulk acoustic wave resonator structure for reducing electrical loss of electrodes
Published in 2013 IEEE MTT-S International Microwave Symposium Digest (MTT) (01-06-2013)“…A Bulk acoustic wave (BAW) resonator is an essential component in the RF filter and duplexer of mobile devices. The BAW resonator consists of a piezoelectric…”
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Conference Proceeding -
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Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates
Published in Materials letters (01-12-2007)“…GaN nanorods have been synthesized by ammoniating Ga2O3 films on a TiO2 middle layer deposited on Si(111) substrates. The products were characterized by X-Ray…”
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Synthesis and characteristics of sword-like GaN nanorods clusters through ammoniating Ga2O3 thin films
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-04-2006)“…Sword-like GaN nanorods have been successfully synthesized by ammoniating Ga2O3 thin films deposited on Si substrate by magnetron sputtering. The GaN nanorods…”
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17
AlN/Sapphire-Based SAW Resonators With Q Over 10000 for Temperature Sensors
Published in IEEE sensors journal (15-04-2023)“…A surface acoustic wave (SAW) resonator with quality factors ([Formula Omitted]) of 3526/10 205 at the resonant/antiresonant frequencies ([Formula Omitted])…”
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Development of a rapid, accurate and efficient HPLC method for simultaneous determination of catechins and theaflavins in black tea
Published in Journal of food composition and analysis (01-04-2024)“…Catechins and theaflavins, as the primary bioactive constituents of black tea, have a significant impact on its color, aroma, and flavor profile. We developed…”
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AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific On-Resistance
Published in IEEE transactions on electron devices (01-12-2022)“…N-p-n AlGaN/GaN heterojunction bipolar transistors (HBTs) on sapphire substrates with high current gain <inline-formula> <tex-math notation="LaTeX">\beta…”
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GaN surface acoustic wave filter with low insertion loss
Published in Ultrasonics (01-07-2023)“…•SAW filter with an insertion loss (IL) of 4.415 dB has been demonstrated on c-plane bulk GaN, which is the minimum IL of GaN-based SAW filters.•The impact of…”
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