Search Results - "Ahn, E S"

Effects of metal electrodes on the resistive memory switching property of NiO thin films by Lee, C. B., Kang, B. S., Benayad, A., Lee, M. J., Ahn, S.-E., Kim, K. H., Stefanovich, G., Park, Y., Yoo, I. K.

“…The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high…”
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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory by Lee, M.-J., Park, Y., Suh, D.-S., Lee, E.-H., Seo, S., Kim, D.-C., Jung, R., Kang, B.-S., Ahn, S.-E., Lee, C. B., Seo, D. H., Cha, Y.-K., Yoo, I.-K., Kim, J.-S., Park, B. H.

“…A memory cell consisting of a Pt/VO2/Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than Vth of 0.6 V, the…”
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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory by Ahn, S.-E., Lee, M.-J., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D.-S., Kim, D.-C., Hur, J., Xianyu, W., Stefanovich, G., Yin, H., Yoo, I.-K., Lee, J.-H., Park, J.-B., Baek, I.-G., Park, B. H.

“…A novel memory cell structure with a Pt/Ti‐doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching…”
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A phantom model study to identify the most effective manual aspiration thrombectomy for acute deep-vein thrombosis of the lower extremity by Kwon, S.H, Ahn, S.-E, Shin, J.S, Youn, H.-C, Kim, J.-H, Oh, J.H

“…Aim To identify the most effective manual aspiration thrombectomy (MAT) method for the initial endovascular management of acute deep-vein thrombosis (DVT) in…”
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A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories by Lee, M.-J., Seo, S., Kim, D.-C., Ahn, S.-E., Seo, D. H., Yoo, I.-K., Baek, I.-G., Kim, D.-S., Byun, I.-S., Kim, S.-H., Hwang, I.-R., Kim, J.-S., Jeon, S.-H., Park, B. H.

“…A one‐diode/one‐resistor structure, Pt/NiO/Pt/p‐NiOx/n‐TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward…”
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Bipolar resistance switching of NiO/indium tin oxide heterojunction by Ahn, S.-E., Kang, B.S.

“…We prepared poly-crystalline NiO/indium tin oxide (ITO) heterojunction structure using magnetron sputtering at low temperature (<350 °C) for application to…”
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Fetal blood‐gas values during fetoscopic myelomeningocele repair performed under carbon dioxide insufflation by Baschat, A. A., Ahn, E. S., Murphy, J., Miller, J. L.

“…ABSTRACT Fetoscopic myelomeningocele (MMC) repair is performed using intrauterine carbon dioxide (CO2) insufflation. Sheep experiments have shown that CO2…”
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Electrode dependence of resistance switching in polycrystalline NiO films by Seo, S., Lee, M. J., Kim, D. C., Ahn, S. E., Park, B.-H, Kim, Y. S., Yoo, I. K., Byun, I. S., Hwang, I. R., Kim, S. H., Kim, J.-S., Choi, J. S., Lee, J. H., Jeon, S. H., Hong, S. H., Park, B. H.

“…We investigated resistance switching in top-electrode/ Ni O ∕ Pt structures where the top electrode was Au, Pt, Ti, or Al. For Pt ∕ Ni O ∕ Pt and Au ∕ Ni O ∕…”
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Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnOx/Pt and the effect of TiN layer on the improved resistance switching characteristics by KIM, K. H, LEE, S. R, AHN, S.-E, LEE, M.-J, KANG, B. S

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Defect-induced degradation of rectification properties of aged Pt∕n-InxZn1−xOy Schottky diodes by Kim, K. H., Kang, B. S., Lee, M.-J., Ahn, S.-E., Lee, C. B., Stefanovich, G., Xianyu, W. X., Kim, K.-K., Kim, J. S., Yoo, I. K., Park, Y.

“…In this study, Pt/IZO (InxZn1−xOy) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a…”
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Ultrasound‐based three‐dimensional printed medical model for multispecialty team surgical rehearsal prior to fetoscopic myelomeningocele repair by Miller, J. L., Ahn, E. S., Garcia, J. R., Miller, G. T., Satin, A. J., Baschat, A. A.

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Ultrafast Brain MRI Can Be Used for Indications beyond Shunted Hydrocephalus in Pediatric Patients by Tekes, A, Senglaub, S S, Ahn, E S, Huisman, T A G M, Jackson, E M

“…Evaluation of shunted hydrocephalus is the most common indication for ultrafast brain MRI. Radiation-/sedation-free imaging capabilities make this protocol…”
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Electrical observations of filamentary conductions for the resistive memory switching in NiO films by Kim, D. C., Seo, S., Ahn, S. E., Suh, D.-S., Lee, M. J., Park, B.-H., Yoo, I. K., Baek, I. G., Kim, H.-J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U-In, Moon, J. T., Ryu, B. I.

“…Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate…”
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Extension of Shelf Life by Treatment with Allyl Isothiocyanate in Combination with Acetic Acid on Cooked Rice by Kim, Y.S., Ahn, E.S., Shin, D.H.

“…In order to extend the shelf life of cooked rice, allyl isothiocyanate (AIT) and acetic acid were applied, and both microbiological evaluations and sensory…”
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Determining the optimal maintenance action for a deteriorating repairable system by Kim, T.S., Park, C.S., Ahn, S.E.

“…This paper develops a decision model for risk management of the deterioration of a repairable system. When a failure occurs in a deteriorating system, an…”
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Improvement of resistive memory switching in NiO using IrO2 by Kim, D. C., Lee, M. J., Ahn, S. E., Seo, S., Park, J. C., Yoo, I. K., Baek, I. G., Kim, H. J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U-In, Moon, J. T., Ryu, B. I.

“…For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble…”
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A multiple replenishment contract with ARIMA demand processes by Kim, Jong Soo, Shin, K Y, Ahn, S E

“…This paper is concerned with a multiple replenishment contract with a purchase price discount in a supply chain. The chain is composed of one supplier, one…”
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Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films by Lee, C. B., Kang, B. S., Lee, M. J., Ahn, S. E., Stefanovich, G., Xianyu, W. X., Kim, K. H., Hur, J. H., Yin, H. X., Park, Y., Yoo, I. K., Park, J.-B., Park, B. H.

“…The effects of Ni and Ni 0.83 Pt 0.17 alloy electrodes on the resistance switching of the dc-sputtered polycrystalline NiO thin films were investigated. The…”
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Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnO x/Pt and the effect of TiN layer on the improved resistance switching characteristics by Kim, K.H., Lee, S.R., Ahn, S.-E., Lee, M.-J., Kang, B.S.

“…We investigated the electrical properties of oxide-based one diode/one resistor (1D-1R) memory cells for resistance switching memory device application…”
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The Effect of Zirconia Reinforcing Agents on the Microstructure and Mechanical Properties of Hydroxyapatite-Based Nanocomposites by Ahn, Edward S., Gleason, Nathaniel J., Ying, Jackie Y.

“…A hydrothermally treated zirconia colloid was introduced during the precipitation of hydroxyapatite (HAP) to achieve an HAP–zirconia nanocomposite. High…”
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