A ZnS–Si isotype heterojunction avalanche photodiode structure for scintillation light detection

We have developed a zinc sulfide–silicon (ZnS–Si) isotype heterojunction avalanche photodiode (APD) structure that has high quantum efficiency and low excess noise factor for photons of wavelength in the region from 340 to 800 nm. The dependence of quantum efficiency, mean signal and its fluctuation...

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Bibliographic Details
Published in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 567; no. 1; pp. 268 - 271
Main Authors:	Tapan, I., Ahmetoglu (Afrailov), M.A., Kocak, F.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-11-2006
Subjects:	Detector modelling Heterojunction detectors Monte Carlo simulation Scintillation light detection 29.40.Mc Scintillation light detection Detector modelling 02.70.Uu Heterojunction detectors Monte Carlo simulation 29.40.Wk 85.60.Bt
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Summary:	We have developed a zinc sulfide–silicon (ZnS–Si) isotype heterojunction avalanche photodiode (APD) structure that has high quantum efficiency and low excess noise factor for photons of wavelength in the region from 340 to 800 nm. The dependence of quantum efficiency, mean signal and its fluctuation on incident photons wavelength are calculated in a well-defined device geometry by a Single Particle Monte Carlo simulation technique. Based on this work, we offer a new APD structure for scintillation light detection.
ISSN:	0168-9002 1872-9576
DOI:	10.1016/j.nima.2006.05.105