Search Results - "Ahmad, Islam"

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    Strain engineering and epitaxial stabilization of halide perovskites by Chen, Yimu, Lei, Yusheng, Li, Yuheng, Yu, Yugang, Cai, Jinze, Chiu, Ming-Hui, Rao, Rahul, Gu, Yue, Wang, Chunfeng, Choi, Woojin, Hu, Hongjie, Wang, Chonghe, Li, Yang, Song, Jiawei, Zhang, Jingxin, Qi, Baiyan, Lin, Muyang, Zhang, Zhuorui, Islam, Ahmad E., Maruyama, Benji, Dayeh, Shadi, Li, Lain-Jong, Yang, Kesong, Lo, Yu-Hwa, Xu, Sheng

    Published in Nature (London) (09-01-2020)
    “…Strain engineering is a powerful tool with which to enhance semiconductor device performance 1 , 2 . Halide perovskites have shown great promise in device…”
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    Journal Article
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    Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications by Islam, Ahmad E., Rogers, John A., Alam, Muhammad A.

    Published in Advanced materials (Weinheim) (22-12-2015)
    “…High purity semiconducting single‐walled carbon nanotubes (s‐SWCNTs) with a narrow diameter distribution are required for high‐performance transistors…”
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    Journal Article
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    Efficient Closed-loop Maximization of Carbon Nanotube Growth Rate using Bayesian Optimization by Chang, Jorge, Nikolaev, Pavel, Carpena-Núñez, Jennifer, Rao, Rahul, Decker, Kevin, Islam, Ahmad E., Kim, Jiseob, Pitt, Mark A., Myung, Jay I., Maruyama, Benji

    Published in Scientific reports (03-06-2020)
    “…A major technological challenge in materials research is the large and complex parameter space, which hinders experimental throughput and ultimately slows down…”
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    Journal Article
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    Enhanced Conductivity, Adhesion, and Environmental Stability of Printed Graphene Inks with Nitrocellulose by Secor, Ethan B, Gao, Theodore Z, Islam, Ahmad E, Rao, Rahul, Wallace, Shay G, Zhu, Jian, Putz, Karl W, Maruyama, Benji, Hersam, Mark C

    Published in Chemistry of materials (14-03-2017)
    “…Recent developments in liquid-phase processing of carbon nanomaterials have established graphene as a promising candidate for printed electronics. Of great…”
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    Journal Article
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    Insight on Structure of Water and Ice Next to Graphene Using Surface-Sensitive Spectroscopy by Singla, Saranshu, Anim-Danso, Emmanuel, Islam, Ahmad E., Ngo, Yen, Kim, Steve S., Naik, Rajesh R., Dhinojwala, Ali

    Published in ACS nano (23-05-2017)
    “…The water/graphene interface has received considerable attention in the past decade due to its relevance in various potential applications including energy…”
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    Journal Article
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    Biomarkers and Detection Platforms for Human Health and Performance Monitoring: A Review by Sim, Daniel, Brothers, Michael C., Slocik, Joseph M., Islam, Ahmad E., Maruyama, Benji, Grigsby, Claude C., Naik, Rajesh R., Kim, Steve S.

    Published in Advanced science (01-03-2022)
    “…Human health and performance monitoring (HHPM) is imperative to provide information necessary for protecting, sustaining, evaluating, and improving personnel…”
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    Journal Article
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    A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I(D)/I(D′) intensity ratio by theoretical analysis by Jiang, Jie, Pachter, Ruth, Mehmood, Faisal, Islam, Ahmad E., Maruyama, Benji, Boeckl, John J.

    Published in Carbon (New York) (01-08-2015)
    “…To distinguish defects in defective single-layer graphene (DSLG), we developed a method combining first principles density functional theory and tight-binding…”
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    Journal Article
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    Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation by Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.

    Published in IEEE transactions on electron devices (01-09-2024)
    “…We calculated power figure-of-merit (PFoM) in <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3-based lateral…”
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    Journal Article
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    Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit by Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

    Published in IEEE electron device letters (01-08-2022)
    “…We demonstrate a passivated MESFET fabricated on (010) Si-doped <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 with…”
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    Journal Article
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    Usability of Telemedicine in Physical Therapy Rehabilitation: Systematic review by Mahmoud, Sr, Islam Ahmad Muhammad

    “…The term 'Telemedicine' was coined in the 1970s to imply 'healing at a distance. Physical therapy rehabilitation (PTR) focuses on the re-institution of…”
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    Journal Article
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    Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport by Miller, Nicholas C., Grupen, Matt, Islam, Ahmad E., Albrecht, John D., Frey, Dave, Young, Richard, Lindquist, Miles, Green, Andrew J., Walker, Dennis E., Chabak, Kelson D.

    Published in IEEE transactions on electron devices (01-02-2023)
    “…This article presents for the first time a direct connection between gate lag observed in drain current transient measurements of gallium nitride (GaN)…”
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    Journal Article
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    500 °C operation of β-Ga2O3 field-effect transistors by Islam, Ahmad E., Sepelak, Nicholas P., Liddy, Kyle J., Kahler, Rachel, Dryden, Daniel M., Williams, Jeremiah, Lee, Hanwool, Gann, Katie, Popp, Andreas, Leedy, Kevin D., Hendricks, Nolan S., Brown, Jeff. L., Heller, Eric R., Wang, Weisong, Zhu, Wenjuan, Thompson, Michael O., Chabak, Kelson D., Green, Andrew J.

    Published in Applied physics letters (12-12-2022)
    “…We demonstrated 500 °C operation of field-effect transistors made using ultra-wide bandgap semiconductor β-Ga2O3. Metal–semiconductor field-effect transistors…”
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    Journal Article
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    Analytical Determination of Unipolar Diode Losses in Power Switching and Perspective for Ultra-Wide Bandgap Semiconductors by Hendricks, Nolan S., Piel, Joshua J., Islam, Ahmad E., Green, Andrew J.

    “…Ultra-wide bandgap (UWBG) materials have exciting potential for power electronics applications due to their high breakdown electric fields. However, current…”
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    Conference Proceeding
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    Laser-Induced Nanoscale Thermocapillary Flow for Purification of Aligned Arrays of Single-Walled Carbon Nanotubes by Du, Frank, Felts, Jonathan R, Xie, Xu, Song, Jizhou, Li, Yuhang, Rosenberger, Matthew R, Islam, Ahmad E, Jin, Sun Hun, Dunham, Simon N, Zhang, Chenxi, Wilson, William L, Huang, Yonggang, King, William P, Rogers, John A

    Published in ACS nano (23-12-2014)
    “…Although aligned arrays of single-walled carbon nanotubes (SWNTs) have outstanding potential for use in broad classes of advanced semiconductor devices, the…”
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    Journal Article
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    Modeling Graphene with Nanoholes: Structure and Characterization by Raman Spectroscopy with Consideration for Electron Transport by Jiang, Jie, Pachter, Ruth, Demeritte, Teresa, Ray, Paresh C, Islam, Ahmad E, Maruyama, Benji, Boeckl, John J

    Published in Journal of physical chemistry. C (17-03-2016)
    “…Recent advances in controlled synthesis and characterization of single-layer graphene nanostructures with defects provide the basis for gaining an…”
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    Journal Article