Search Results - "Ahlers, F J"

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC by Momeni Pakdehi, D, Aprojanz, J, Sinterhauf, A, Pierz, K, Kruskopf, M, Willke, P, Baringhaus, J, Stöckmann, J. P, Traeger, G. A, Hohls, F, Tegenkamp, C, Wenderoth, M, Ahlers, F. J, Schumacher, H. W

“…We report on electronic transport measurements in rotational square probe configuration in combination with scanning tunneling potentiometry of epitaxial…”
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Quantized charge pumping through a quantum dot by surface acoustic waves by Ebbecke, J., Fletcher, N. E., Janssen, T. J. B. M., Ahlers, F. J., Pepper, M., Beere, H. E., Ritchie, D. A.

“…We present a realization of quantized charge pumping. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface…”
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Graphene p-n junction arrays as quantum-Hall resistance standards by Woszczyna, M., Friedemann, M., Dziomba, T., Weimann, Th, Ahlers, F. J.

“…We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature…”
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Towards a graphene-based quantum impedance standard by Kalmbach, C.-C., Schurr, J., Ahlers, F. J., Müller, A., Novikov, S., Lebedeva, N., Satrapinski, A.

“…Precision measurements of the quantum Hall resistance with alternating current (ac) in the kHz range were performed on epitaxial graphene in order to assess…”
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Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC by Momeni Pakdehi, D, Pierz, K, Wundrack, S, Aprojanz, J, Nguyen, T. T. N, Dziomba, T, Hohls, F, Bakin, A, Stosch, R, Tegenkamp, C, Ahlers, F. J, Schumacher, H. W

“…In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the…”
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Graphene on gallium arsenide: Engineering the visibility by Friedemann, M., Pierz, K., Stosch, R., Ahlers, F. J.

“…Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon ( Si / SiO 2 ) enabled its discovery and…”
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Study of the limitations of the quantized acoustic current technique at PTB and NPL by Ebbecke, J., Fletcher, N.E., Ahlers, F.-J., Hartland, A., Janssen, T.J.B.M.

“…We present a detailed study of surface acoustic wave devices produced at Physikalisch-Technische Bundesanstalt and Cambridge University. From the temperature…”
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Coherent switching of semiconductor resonator solitons by TARANENKO, V. B, AHLERS, F. J, PIERZ, K

“…We demonstrate the switching on and off of spatial solitons in a semiconductor microresonator by injection of light coherent with the background illumination…”
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Enhanced quantized current driven by surface acoustic waves by Ebbecke, J., Bastian, G., Blöcker, M., Pierz, K., Ahlers, F. J.

“…We present the experimental realization of different approaches to increase the amount of quantized current which is driven by surface acoustic waves through…”
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The width of AC quantum Hall plateaus by Schurr, J., Melcher, J., Pierz, K., Hein, G., Ahlers, F.-J.

“…The quantum Hall effect in GaAs heterostructures is investigated with alternating currents in the kilohertz frequency range. The width of the plateau shows no…”
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Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBE by Gottwaldt, L., Pierz, K., Ahlers, F.J., Göbel, E.O., Nau, S., Torunski, T., Stolz, W.

“…We report the results of systematic studies of the influence of the growth temperature on the morphology of GaAs/(Al 0.3Ga 0.7)As quantum well interfaces. A…”
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Loss phenomena in the AC quantum Hall effect by Schurr, J., Melcher, J., von Campenhausen, A., Pierz, K., Hein, G., Ahlers, F.-J.

“…We investigated the ac quantum Hall effect of several GaAs-based samples. The influence of temperature, current, and frequency was measured for the plateaux…”
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An all-chromium single electron transistor: A possible new element of single electronics by Kuzmin, L. S., Pashkin, Yu. A., Tavkhelidze, A. N., Ahlers, F.-J., Weimann, T., Quenter, D., Niemeyer, J.

“…The realization of an all-chromium single electron tunneling (SET) transistor is reported. Chromium was chosen as a normal metal with small grain structure…”
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Dissipation factor and frequency dependence of graphene quantum Hall devices by Kalmbach, C.-C, Schurr, J., Müller, A., Kruskopf, M., Pierz, K., Ahlers, F. J.

“…Quantum Hall resistors made from epitaxial graphene measured with alternating current exhibit an unusual negative frequency dependence. To test the hypothesis…”
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Strong influence of in-plane magnetic fields on the cyclotron effective electron mass at the GaAs/Al0.3Ga0.7As heterojunction by Schneider, D, Klaffs, T, Pierz, K, Ahlers, F.-J

“…An in-plane magnetic field B∥, added to a perpendicular one B⊥, and applied to the quasi-two-dimensional electron gas at the GaAs/AlGaAs heterojunction, may…”
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First ac measurements of the quantum Hall effect in epitaxial graphene by Kalmbach, C., Schurr, J., Ahlers, F. J., Muller, A., Novikov, S., Lebedeva, N., Satrapinski, A.

“…We present first ac measurements of the quantized Hall resistance in graphene. Remarkably, the first results are very similar to that of conventional,…”
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Characterization of a GHz non-adiabatic single-electron pump using a cryogenic current comparator by Kaestner, B., Leicht, C., Hohls, F., Gotz, M., Drung, D., Pierz, K., Ahlers, F. J., Schumacher, H. W.

“…We use a cryogenic current comparator with primary/secondary winding ratio of N P :N S =4501:1 to scale up the current from a non-adiabatic single-charge pump…”
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Realization of magnetic field reversible quantum Hall arrays by Konemann, J, Ahlers, F J, Pesel, E, Pierz, K, Schumacher, H W

“…We realize and experimentally study magnetic field reversible serial quantum Hall arrays. Our devices consist of two Hall bars with rectangular or square…”
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Eddy currents in the integer quantum Hall regime spatially resolved by multiple single-electron transistor electrometers by Klaffs, T., Krupenin, V.A., Weis, J., Ahlers, F.J.

“…Varying the magnetic field in the integer quantum Hall regime induces large eddy currents inside the two-dimensional electron system. Using multiple…”
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Precision quantization of Hall resistance in transferred graphene by Woszczyna, M., Friedemann, M., Götz, M., Pesel, E., Pierz, K., Weimann, T., Ahlers, F. J.

“…We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in…”
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