Search Results - "Ahaitouf, A."

Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE by Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

“…In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting…”
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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaram, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A.

“…[Display omitted] We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the…”
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Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices by Srour, H., Salvestrini, J. P., Ahaitouf, A., Gautier, S., Moudakir, T., Assouar, B., Abarkan, M., Hamady, S., Ougazzaden, A.

“…Large internal gains that can be obtained in wide band gap semiconductors-based (GaN and ZnO types) Schottky and/or metal-semiconductor-metal photodetectors…”
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Interface state effects in GaN Schottky diodes by Ahaitouf, A., Srour, H., Hamady, S. Ould Saad, Fressengeas, N., Ougazzaden, A., Salvestrini, J.P.

“…Current voltage (I-V) and capacitance voltage (C-V) measurements have been performed versus temperature on GaN Schottky diodes. The results show an increase of…”
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Application of swarm intelligence techniques to the design of analog circuits: evaluation and comparison by Sallem, A., Benhala, B., Kotti, M., Fakhfakh, M., Ahaitouf, A., Loulou, M.

“…Swarm intelligence (SI) techniques are more and more used by analog designers in order to optimally size their circuits/systems’ performances. A particular…”
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Characteristics of the surface microstructures in thick InGaN layers on GaN by Gmili, Y. El, Orsal, G., Pantzas, K., Ahaitouf, A., Moudakir, T., Gautier, S., Patriarche, G., Troadec, D., Salvestrini, J. P., Ougazzaden, A.

“…This paper focuses on a comparative study of optical, morphological, micros tructural and microcompositional properties of typical InGaN samples which exhibit…”
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Influence of the deposition parameters on the texture of boron nitride thin films synthesized in a microwave plasma-enhanced reactor by Thévenin, P., Eliaoui, M., Ahaitouf, A., Soltani, A., Bath, A.

“…Thin films of boron nitride (BN) have been deposited at low temperature (below 300 °C) by microwave plasma-enhanced chemical vapor deposition (PECVD), using…”
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Blood vessel segmentation of retinal fundus images using dynamic preprocessing and mathematical morphology by Chakour, E., Mrad, Y., Mansouri, A., Elloumi, Y., Bedoui, M.H., Andaloussi, I.B, Ahaitouf, A.

“…Accurate segmentation of blood vessels can make an important and effective contribution to the identification and diagnosis of ocular diseases such as diabetic…”
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Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures by AHAITOUF, A, BATH, A

“…Current-voltage (I-V sub(g)), capacitance-voltage (C-V sub(g)) and photoluminescence intensity variations versus bias voltage (I sub(p)-V sub(g)) are carried…”
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On the determination of interface state density in n-InP Schottky structures by current–voltage measurements: Comparison with DLTS results by Ahaitouf, A, Losson, E, Bath, A

“…Current voltage ( I–V g) and deep level transient spectroscopy (DLTS) techniques have been carried out to study Schottky and ultraviolet oxidised Schottky…”
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Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity by Ahaitouf, A, Bath, A, Thevenin, P, Abarkan, E

“…Bias dependence of the integrated room temperature photoluminescence (PL) intensity and capacitance measurements, are used to study the interface properties of…”
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Stability of sulfur-treated n-InP Schottky structures, studied by current–voltage measurements by Ahaitouf, A, Bath, A, Losson, E, Abarkan, E

“…Electrical properties of n-InP metal–semiconductor diodes with S-treated, annealed S-treated and as-etched (non-treated) surfaces are investigated. The…”
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Temperature effect on electroluminescence spectra of silicon p–n junctions under avalanche breakdown condition by Lahbabi, M., Jorio, M., Ahaitouf, A., Fliyou, M., Abarkan, E.

“…The temperature effect on electroluminescence spectra of silicon p–n junctions under avalanche breakdown condition is investigated. Two different cases are…”
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Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model by Lahbabi, M., Ahaitouf, A., Abarkan, E., Fliyou, M., Hoffmann, A., Charles, J.-P., Bhuva, Bharat L., Kerns, S. E., Kerns, D. V.

“…Light emission from a p-n junction biased in avalanche breakdown has been modeled over the range 1.4–3.4 eV. The model emphasizes indirect interband processes…”
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Tunable Narrow Filter Based on 1D Photonic Star Waveguides Containing Metamaterial Resonators Defects for Frequency Division Multiplexing Applications by Ben-Ali, Y., Errouas, Y., El kadmiri, I., Ahaitouf, A., Bria, D.

“…In the framework of the Green Function method (GFM), we investigate the transmission spectrum and the band structure of the one-dimensional perfect photonic…”
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Four Frequencies Filtering By the One-Dimensional Photonic Defectives Star Waveguides Structure by Ben-Ali, Y., El kadmiri, I., Younes, Errouas, Ahaitouf, A., Bria, D.

“…We investigate theoretically, the existence of several defects modes in the transmission spectrum and in the band structure of a one-dimensional star waveguide…”
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Simulation of gallium arsenide electroluminescence spectra in avalanche breakdown using self-absorption and recombination models by Lahbabi, M., Ahaitouf, A., Abarkan, E., Fliyou, M., Hoffmann, A., Charles, J.-P., Bhuva, Bharat L., Kerns, S. E., Kerns, D. V.

“…Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes…”
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Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaran, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, Jean-Paul, Ougazzaden, A.

“…We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of…”
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Multi-objective optimization of second generation current conveyors by the ACO technique by Benhala, B., Ahaitouf, A., Mechaqrane, A., Benlahbib, B.

“…A multi-objective optimization algorithm, based on the Ant Colony Optimization technique (MOACO), to deal with the transistor sizing of CMOS Current Conveyors…”
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Influence of the deposition parameters on the texture of boron nitride thin films synthesized in a microwave plasma-enhanced reactor by Thevenin, P., Eliaoui, M., Ahaitouf, A., Soltani, A., Bath, A.

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