Search Results - "Agopian, Paula G. D."

GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes by Oliveira, Alberto V., Simoen, Eddy, Mitard, Jerome, Agopian, Paula G. D., Martino, Joao A., Langer, Robert, Witters, Liesbeth J., Collaert, Nadine, Thean, Aaron, Claeys, Cor

“…This letter characterizes the generation- recombination noise of Ge pFinFETs, for three different integration schemes: shallow trench isolation (STI) first…”
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Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective by Bordallo, Caio C. M., Sivieri, Victor B., Martino, Joao Antonio, Agopian, Paula G. D., Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Voon-Yew Thean, Aaron, Claeys, Cor

“…In this work, the impact of the diameter on vertical nanowire tunnel field effect transistors is analyzed focusing on the conduction mechanism and analog…”
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Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs by Agopian, Paula G. D., Martino, João A., Kobayashi, Daisuke, Simoen, Eddy, Claeys, Cor

“…In this work the proton irradiation influence on Multiple Gate MOSFETs (MuGFETs) performance is investigated. This analysis was performed through basic and…”
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Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures by Silva, Vanessa C. P., Perina, Welder F., Martino, Joao A., Simoen, Eddy, Veloso, Anabela, Agopian, Paula G. D.

“…The analysis of vertically stacked nanosheet (NS) n-type transistors with two different metal gate-stacks (with a total thickness of 7.5 and 4.7 nm) is…”
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Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source by Neves, Felipe S., Agopian, Paula G. D., Martino, Joao Antonio, Cretu, Bogdan, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Voon-Yew Thean, Aaron, Claeys, Cor

“…This paper presents the low-frequency noise (LFN) behavior of vertical tunnel FETs (TFETs). The experimental input characteristics with different source…”
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Influence of multiple conduction channels on MISHEMT's intrinsic voltage gain by Canales, Bruno G., Agopian, Paula G. D.

“…The influence of multiple channels of Si 3 N 4 / AlGaN/ AlN/ GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) were analyzed…”
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Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs by Agopian, Paula G. D., Martino, Marcio D. V., Dos Santos, Sara D., Neves, Felipe S., Martino, Joao Antonio, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Thean, Aaron Voon-Yew, Claeys, Cor

“…The goal of this paper is to study the analog performance parameters of tunnel field-effect transistors (TFETs) with different source compositions and process…”
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Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes by de Oliveira, Alberto V., Simoen, Eddy, Mitard, Jerome, Agopian, Paula G. D., Martino, Joao Antonio, Langer, Robert, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron Voon-Yew, Claeys, Cor

“…An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is…”
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Experimental Analysis of MISHEMT Multiple Conductions from 200K to 450K by Perina, Welder F., Martino, Joao A., Agopian, Paula G. D.

“…In this work, the multiple conductions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) when operating in a temperature…”
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Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms by Canales, Bruno G., Martino, Joao A., Agopian, Paula G. D.

“…The drain current in the Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) is studied as a function of AlGaN barrier layer thickness,…”
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Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs by de Araujo, Gustavo V., Martino, Joao A., Agopian, Paula G. D.

“…In this paper the Omega-gate nanowire (NW) transistor applied for designing Operational Transconductance Amplifier (OTA) is studied, focusing mainly on the…”
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The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations by Canales, Bruno G., Carmo, Genilson J., Agopian, Paula G. D.

“…In this work, an Al 2 O 3 /AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) is analyzed and the investigation of its…”
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Uniaxially strained silicon influence on Two-stage Operational Transconductance Amplifiers designed with SOI FinFET's by Ribeiro, Arllen D. R., Araujo, Gustavo V., Martino, Joao A., Agopian, Paula G. D.

“…This paper analyzes the influence of uniaxially strained silicon on two-stage operational transconductance amplifiers (OTA) designed with SOI FinFETs. The OTA…”
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Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K by Perina, Welder F., Martino, Joao A., Simoen, Eddy, Peralagu, Uthayasankaran, Collaert, Nadine, Agopian, Paula G. D.

“…In this work, the effect of the multiple conductions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) when operating…”
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Trade-off between channel length and mechanical stress in the Operational Transconductance Amplifier designed with SOI FinFET by Ribeiro, Arllen D. R., Araujo, Gustavo V., Martino, Joao A., Agopian, Paula G. D.

“…In this paper, the trade-off between transistor channel length and the presence (or not) of the uniaxially strained SOI FinFETs for designing Operational…”
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Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200°C down to -100°C by Leal, Joao V. C., Agopian, Paula G. D., Martino, Joao A.

“…The quantum effect on the Gate-All-Around Nanosheet (GAA NS) NMOS devices are studied in this paper from 200°C down to -100°C. The experimental results for…”
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Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence by Sousa, Julia C. S., Martino, Joao A., Agopian, Paula G. D.

“…This paper presents a simple analytical modelling of a Electronically Tunable Potentiometer (ETP) circuit, made of a pseudo-resistor pair and a feedback…”
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Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap by Macambira, Christian N., Agopian, Paula G. D., Martino, Joao A.

“…In this paper, the sensitivity of the fringing field n-type tunneling field-effect transistor biosensor (Bio-nTFET) was investigated over the influence of…”
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Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET by Carvalho, Henrique L., Rangel, Ricardo C., Sasaki, Katia R. A., Agopian, Paula G. D., Yojo, Leonardo S., Martino, Joao A.

“…This work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum…”
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Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices by Coelho, Carlos H. S., Martino, Joao A., Simoen, Eddy, Veloso, Anabela, Agopian, Paula G. D.

“…This paper shows an experimental analysis of the zero-temperature coefficient (ZTC) bias point of vertically stacked gate-all-around nanosheet pMOS devices…”
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