Search Results - "Aggerstam, T."

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire by AGGERSTAM, T, PINOS, A, MARCINKEVICIUS, S, LINNARSSON, M, LOURDUDOSS, S

“…Carrier trapping of Fe^sup 3+^/Fe^sup 2+^ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the…”
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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates by Ougazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J.N.

“…The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved…”
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Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire by Aggerstam, T., Lourdudoss, S., Radamson, H.H., Sjödin, M., Lorenzini, P., Look, D.C.

“…We have developed a virtual GaN substrate on sapphire based on a two-step growth method. By optimizing the growth scheme for the virtual substrate we have…”
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Electrical and structural characterization of ion implanted GaN by Usman, M., Nazir, A., Aggerstam, T., Linnarsson, M.K., Hallén, A.

“…Ion implantation induced defects and their consequent electrical impact have been investigated. Unintentionally doped n-type gallium nitride was implanted with…”
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Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing by Arulkumaran, S., Ng, G. I., Tan, C. L., Liu, Z. H., Bu, J., Radhakrishnan, K., Aggerstam, T., Sjödin, M., Lourdudoss, S.

“…The enhancement of both direct-current (dc) and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors (HEMTs) were demonstrated by…”
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Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy by Liu, X.Y., Jänes, P., Holmström, P., Aggerstam, T., Lourdudoss, S., Thylén, L., Andersson, T.G.

“…GaN layers of 280 nm thick were grown on sapphire, silicon (1 1 1) and GaN template by plasma assisted molecular beam epitaxy. From atomic force microscopy and…”
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AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas by Gautier, S., Aggerstam, T., Pinos, A., Marcinkevičius, S., Liu, K., Shur, M., O’Malley, S.M., Sirenko, A.A., Djebbour, Z., Migan-Dubois, A., Moudakir, T., Ougazzaden, A.

“…Al x Ga 1− x N/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as…”
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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy by Liu, X.Y., Aggerstam, T., Jänes, P., Holmström, P., Lourdudoss, S., Thylén, L., Andersson, T.G.

“…Ten period GaN/AlN multiple quantum well (MQW) structures were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates and metal-organic…”
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Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates by Andersson, T.G., Liu, X.Y., Aggerstam, T., Holmström, P., Lourdudoss, S., Thylen, L., Chen, Y.L., Hsieh, C.H., Lo, I.

“…We have used MBE to grow in AlN/GaN superlattices, with different number of periods, on 2.5-μm-thick MOVPE-GaN templates to study the development of defects…”
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Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures by Lo, Ikai, Gau, M. H., Tsai, J. K., Chen, Y. L., Chang, Z. J., Wang, W. T., Chiang, J. C., Aggerstam, T., Lourdudoss, Sebastian

“…We have observed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. An anomalous beating pattern was observed in Shubnikov-de Haas…”
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AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas by Gautier, S., Aggerstam, T., Pinos, A., Marcinkevicius, S., Liu, K., Shur, M., O'Malley, S.M., Sirenko, A.A., Djebbour, Zakaria, Migan-Dubois, Anne, Moudakir, T., Ougazzaden, A.

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Enhancement of both direct-current and microwave characteristics of Al Ga N ∕ Ga N high-electron-mobility transistors by furnace annealing by Arulkumaran, S., Ng, G. I., Tan, C. L., Liu, Z. H., Bu, J., Radhakrishnan, K., Aggerstam, T., Sjödin, M., Lourdudoss, S.

“…The enhancement of both direct-current (dc) and microwave characteristics of Al Ga N ∕ Ga N high-electron-mobility transistors (HEMTs) were demonstrated by…”
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AlGaN/AIN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas by GAUTIER, S, AGGERSTAM, T, MOUDAKIR, T, OUGAZZADEN, A, PINOS, A, MARCINKEVICUS, S, LIU, K, SHUR, M, O'MALLEY, S. M, SIRENKO, A. A, DJEBBOUR, Z, MIGAN-DUBOIS, A

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Anomalous k -dependent spin splitting in wurtzite Al x Ga 1 − x N ∕ Ga N heterostructures by Lo, Ikai, Gau, M. H., Tsai, J. K., Chen, Y. L., Chang, Z. J., Wang, W. T., Chiang, J. C., Aggerstam, T., Lourdudoss, S.

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Simulations and measurements of the dynamic performance of 850 nm VCSELs with GaAs and InGaAs quantum well active regions by Marcks von Wurtemberg, R., Aggerstam, T., Runnstrom, C., Chitica, N., Malmquist, J.

“…The carrier density - gain relationship in the active region has a significant impact on the dynamic performance of a VCSEL. This impact is investigated both…”
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Study of two-subband population in Fe-doped Al x Ga 1 − x N ∕ GaN heterostructures by persistent photoconductivity effect by Lo, Ikai, Tsai, J. K., Gau, M. H., Chen, Y. L., Chang, Z. J., Wang, W. T., Chiang, J. C., Wang, K. R., Chen, Chun-Nan, Aggerstam, T., Lourdudoss, S.

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Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures by Lo, Ikai, Gau, M. H, Tsai, J. K, Chen, Y. L, Chang, Z. J, Wang, W. T, Chiang, J. C, Aggerstam, T

“…We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises…”
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Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect by Lo, Ikai, Tsai, J. K, Gau, M. H, Chen, Y. L, Chang, Z. J, Wang, W. T, Chiang, J. C, Wang, K. R, Chen, Chun-Nan, Aggerstam, T

“…The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the…”
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