Search Results - "Agata Jasik"
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Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors
Published in Applied physics letters (28-06-2021)“…This Letter focuses on the 1/f noise properties of InAs/GaSb superlattice (SL), which is a promising material for infrared radiation detection and represents…”
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The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes
Published in Sensors (Basel, Switzerland) (22-10-2021)“…In this paper, the results of the electrical, noise, and optical characterization of p-i-n and p-B-i-n diodes with AlSb and 4 ML AlSb/8 ML GaSb superlattice…”
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A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping
Published in Materials (30-08-2021)“…In this paper, the study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and…”
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Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing
Published in Materials (21-10-2021)“…Indium-based micro-bump arrays, among other things, are used for the bonding of infrared photodetectors and focal plane arrays. In this paper, several aspects…”
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GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy
Published in Current applied physics (01-04-2019)“…We report on the growth of fully relaxed and smooth GaSb layers with reduced density of threading dislocations, deposited on GaAs substrate. We prove that…”
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The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays
Published in Metrology and Measurement systems (01-01-2023)“…The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the…”
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On the Study of Dislocation Density in MBE GaSb-Based Structures
Published in Crystals (Basel) (01-12-2020)“…The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by…”
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Dual-wavelength vertical external-cavity surface-emitting laser: strict growth control and scalable design
Published in Applied physics. B, Lasers and optics (01-02-2016)“…This paper reports on the design and fabrication of a dual-wavelength vertical external-cavity surface-emitting laser. Grown by molecular beam epitaxy, the…”
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Magnetotransport measurements as a tool for searching 3D topological insulators
Published in Metrology and Measurement systems (01-01-2021)“…The paper covers some measurement aspects of transport of electrons through metals and semiconductors in magnetic field – magnetotransport – allowing for the…”
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On the onset of strain relaxation in the Al0.45Ga0.55As/InxGa1−xAs active region in quantum cascade laser structures
Published in Journal of applied crystallography (01-10-2017)“…The Al0.45Ga0.55As/InxGa1−xAs active regions in quantum cascade laser structures grown on (001) GaAs substrates were investigated using the high‐resolution…”
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Strain-balanced InAs/GaSb superlattices used for the detection of VLWIR radiation
Published in Infrared physics & technology (01-05-2022)“…•Strain-balanced type II InAs/GaSb SL from VLWIR range.•Two type of microdefects in SL lattice vs their origin.•Photoresponse of VLWIR SLs vs defect…”
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12
Asymmetric and symmetric interfaces in type II MWIR InAs/GaSb superlattices
Published in Surfaces and interfaces (01-01-2024)Get full text
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The impact of mesa etching method on IR photodetector current-voltage characteristics
Published in Materials science in semiconductor processing (01-11-2020)“…In the paper, the results of the study on how etching type influences the quality of mesa structures in discrete antimonide-based photodetectors are presented…”
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Noise-Current Correlations in InAs/GaSb Type-II Superlattice Midwavelength Infrared Detectors
Published in IEEE transactions on electron devices (01-12-2016)“…1/f noise-dark current correlation of p-i-n InAs/ GaSb T2SL detectors was analyzed. Experiments include current and noise measurements versus voltage and…”
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Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system
Published in Applied physics. A, Materials science & processing (01-07-2018)“…A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs…”
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On the onset of strain relaxation in the Al 0.45 Ga 0.55 As/In x Ga 1− x As active region in quantum cascade laser structures
Published in Journal of applied crystallography (01-10-2017)“…The Al 0.45 Ga 0.55 As/In x Ga 1− x As active regions in quantum cascade laser structures grown on (001) GaAs substrates were investigated using the…”
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17
Below-band-gap absorption in undoped GaAs at elevated temperatures
Published in Optical materials (01-02-2017)“…This paper presents results of measurements of optical absorption in undoped epitaxial GaAs for photon energies below the band gap. Absorption spectra were…”
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1/f Noise modeling of InAs/GaSb superlattice mid-wavelength infrared detectors
Published in Optical and quantum electronics (2018)“…The empirical 1/f noise model for p + -p-n infrared detector made of type-II InAs/GaSb superlattice material is presented. It is shown that 1/f noise magnitude…”
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LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE
Published in Crystals (Basel) (01-12-2019)“…We report on the role of AlSb material in the reduction of threading dislocation density (TDD) in the GaSb/AlSb/GaAs system. The AlSb layers were grown using…”
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Optimization of broadband semiconductor chirped mirrors with genetic algorithm
Published in Applied physics. B, Lasers and optics (01-10-2016)“…Genetic algorithm was applied for optimization of dispersion properties in semiconductor Bragg reflectors for applications in femtosecond lasers. Broadband,…”
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