Search Results - "Agarwal, Anant K."

Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs by Zhu, Shengnan, Liu, Tianshi, Fan, Junchong, Maddi, Hema Lata Rao, White, Marvin H., Agarwal, Anant K.

“…650 V SiC planar MOSFETs with various JFET widths, JFET doping concentrations, and gate oxide thicknesses were fabricated by a commercial SiC foundry on two…”
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A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching by Zhu, Shengnan, Liu, Tianshi, Fan, Junchong, Salemi, Arash, White, Marvin H., Sheridan, David, Agarwal, Anant K.

“…A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (Cgd) and…”
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Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs by Liu, Tianshi, Zhu, Shengnan, White, Marvin H., Salemi, Arash, Sheridan, David, Agarwal, Anant K.

“…Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on recently manufactured commercial 1.2 kV 4H-SiC power…”
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Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs by Qian, Jiashu, Shi, Limeng, Jin, Michael, Bhattacharya, Monikuntala, Shimbori, Atsushi, Yu, Hengyu, Houshmand, Shiva, White, Marvin H, Agarwal, Anant K

“…The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is…”
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Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs by Yu, Susanna, White, Marvin H., Agarwal, Anant K.

“…We measure interface trap density near the conduction band edge and fixed oxide charge in commercial, packaged, 4H-SiC 1.2 kV planar Power MOSFETs. These traps…”
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The Road to a Robust and Affordable SiC Power MOSFET Technology by Maddi, Hema Lata Rao, Yu, Susanna, Zhu, Shengnan, Liu, Tianshi, Shi, Limeng, Kang, Minseok, Xing, Diang, Nayak, Suvendu, White, Marvin H., Agarwal, Anant K.

“…This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such…”
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An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures by Qian, Jiashu, Shi, Limeng, Jin, Michael, Bhattacharya, Monikuntala, Shimbori, Atsushi, Yu, Hengyu, Houshmand, Shiva, White, Marvin H, Agarwal, Anant K

“…The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift…”
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SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology by Liu, Tianshi, Zhang, Hua, Isukapati, Sundar Babu, Ashik, Emran, Morgan, Adam J., Lee, Bongmook, Sung, Woongje, Fayed, Ayman, White, Marvin H., Agarwal, Anant K.

“…Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS…”
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A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs by Dhar, Sarit, Sei-Hyung Ryu, Agarwal, Anant K

“…Detailed investigations on the pre-oxidation nitrogen implantation process for the improvement of channel mobility in 4H-SiC MOSFETs are reported. Comparisons…”
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Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs by Zhang, Qingchun (Jon), Agarwal, Anant K.

“…There has been a rapid improvement in SiC materials and power devices during the last few years. SiC unipolar devices such as Schottky diodes, JFETs and…”
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1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time by Xing, Diang, Hu, Boxue, Kang, Minseok, Zhang, Yue, Nayak, Suvendu, Wang, Jin, Agarwal, Anant K.

“…This article presents the short-circuit (SC) capability evaluation of TO-247-3 packaged silicon carbide (SiC) metal-oxide-semiconductor field-effect…”
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Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs by Zhu, Shengnan, Liu, Tianshi, White, Marvin H., Agarwal, Anant K., Salemi, Arash, Sheridan, David

“…The commercialization of silicon carbide (SiC) power metal-oxide-semiconductor field-effect-transistors (MOSFETs) has expanded during the last decade. The gate…”
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Non-isothermal simulation of SiC DMOSFET short circuit capability by Nayak, Suvendu, Yu, Susanna, Maddi, Hema Lata Rao, Jin, Michael, Shi, Limeng, Ganguly, Swaroop, Agarwal, Anant K.

“…Abstract The short circuit (SC) capability is a crucial figure of merit for a power switching device in applications such as electrical vehicle traction…”
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Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology by Isukapati, Sundar Babu, Zhang, Hua, Liu, Tianshi, Ashik, Emran, Lee, Bongmook, Morgan, Adam J, Sung, Woongje, Fayed, Ayman, Agarwal, Anant K.

“…This paper reports the design and process flow for monolithic integration of lateral high voltage (HV) power MOSFET with low voltage (LV) CMOS circuits for SiC…”
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Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs by Shi, Limeng, Qian, Jiashu, Jin, Michael, Bhattacharya, Monikuntala, Yu, Hengyu, White, Marvin H., Agarwal, Anant K., Shimbori, Atsushi

“…This work investigates the behavior of threshold voltage (\mathbf{V}_{\mathbf{th}}) , subthreshold swing (SS), and interface state density…”
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Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress by Qian, Jiashu, Shi, Limeng, Jin, Michael, Bhattacharya, Monikuntala, Yu, Hengyu, White, Marvin H., Agarwal, Anant K., Shimbori, Atsushi, Liu, Tianshi, Zhu, Shengnan

“…Since the constant voltage stress Time-Dependent Dielectric Breakdown (CVS-TDDB) based on the thermochemical E model is a conventional method for predicting…”
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Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs by Shi, Limeng, Zhu, Shengnan, Qian, Jiashu, Jin, Michael, Bhattacharya, Monikuntala, White, Marvin H., Agarwal, Anant K., Shimbori, Atsushi, Liu, Tianshi

“…The effects of different screening methods for non-infant extrinsic defects on the gate oxide reliability of commercial 1.2 kV 4H-SiC power MOSFETs are…”
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Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs by Liu, Tianshi, Zhu, Shengnan, Yu, Susanna, Xing, Diang, Salemi, Arash, Kang, Minseok, Booth, Kristen, White, Marvin H., Agarwal, Anant K.

“…This work examines the gate oxide ruggedness and underlying failure mechanisms of commercially available large-area 1.2 kV 4H-SiC power MOSFETs from multiple…”
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Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs by Zhu, Shengnan, Shi, Limeng, Jin, Michael, Qian, Jiashu, Bhattacharya, Monikuntala, Rao Maddi, Hema Lata, White, Marvin H., Agarwal, Anant K., Liu, Tianshi, Shimbori, Atsushi, Chen, Chingchi

“…The gate oxide reliability, bias temperature insta-bility (BTI), and short-circuit capability for commercial SiC power MOSFETs with planar and trench…”
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Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs by Yu, Susanna, Liu, Tianshi, Zhu, Shengnan, Xing, Diang, Salemi, Arash, Kang, Minseok, Booth, Kristen, White, Marvin H., Agarwal, Anant K.

“…This paper presents threshold voltage instability of commercially available 1.2 kV SiC power MOSFETs from multiple vendors. Time-dependent bias-stress…”
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