Search Results - "Achtnich, T."

Silicon photomultipliers for improved detection of low light levels in miniature near-infrared spectroscopy instruments by Zimmermann, R, Braun, F, Achtnich, T, Lambercy, O, Gassert, R, Wolf, M

“…Silicon photomultipliers are novel solid state photodetectors that recently became commercially available. The goal of this paper was to investigate their…”
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Steps towards integration of PV-electricity into the GRID by Baumgartner, F. P., Achtnich, T., Remund, J., Gnos, S., Nowak, S.

“…The high growth rate of photovoltaic (PV) installations leads to the question about the consequences for grid integration and management. As a case study, we…”
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Study of oxygen incorporation in AlGaAs layers grown by molecular‐beam epitaxy by Achtnich, T., Burri, G., Ilegems, M.

“…Quantitative measurements of oxygen content in epitaxial AlGaAs layers grown by molecular‐beam epitaxy (MBE) are presented and compared with results on liquid…”
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Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy by ACHTNICH, T, BURRI, G, PY, M. A, ILEGEMS, M

“…The accumulation of oxygen at GaAs/AlGaAs interfaces grown by molecular beam epitaxy has been established by secondary ion mass spectrometry profiling of…”
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Quantitative determination of oxygen in AlGaAs layers by secondary ion mass spectrometry under 18O flux by ACHTNICH, T, BURRI, G, ILEGEMS, M

“…Different experimental factors which influence the determination of oxygen content in Alx Ga1−x As semiconductor layers by secondary ion mass spectroscopy…”
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Quantitative determination of oxygen in AlGaAs layers by secondary ion mass spectrometry under 1 8O flux by Achtnich, T., Burri, G., Ilegems, M.

“…Different experimental factors which influence the determination of oxygen content in Al x Ga1−x As semiconductor layers by secondary ion mass spectroscopy…”
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