Effect of interfacial native oxide on the IV characteristics of ZnO/Si(111) heterojunction

n-ZnO/p-Si(111) heterojunctions, with and without interfacial oxide layer, have been fabricated by growing Zn thin films on Si(111) substrate via DC Magnetron sputtering followed by oxidation in air at 800 °C. The specimen with and without interfacial oxide layer is referred to as ZnO/Si_RCA and ZnO...

Full description

Saved in:

Bibliographic Details
Published in:	Physica. B, Condensed matter Vol. 646; p. 414271
Main Authors:	Abhishek, K.J., Gundanna, Susheel Kumar, Ingale, Deepak V., Sundaravel, B., Bhatta, Umananda M.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-12-2022
Subjects:	DC magnetron Sputtering Heterojunction Interfacial native oxide layer T-IV characterization Zinc oxide T-IV characterization Zinc oxide DC magnetron Sputtering Interfacial native oxide layer Heterojunction
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	n-ZnO/p-Si(111) heterojunctions, with and without interfacial oxide layer, have been fabricated by growing Zn thin films on Si(111) substrate via DC Magnetron sputtering followed by oxidation in air at 800 °C. The specimen with and without interfacial oxide layer is referred to as ZnO/Si_RCA and ZnO/Si_HF respectively. Quality of the thin film has been studied using Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). Temperature dependent surface (30 °C - 200 °C) and interfacial (30 °C - 150 ۠°C) current-voltage (T-IV) measurements of both specimens have been studied, under ambient conditions. Surface IV characteristics of ZnO/Si_HF shows lower current response compared to ZnO/Si_RCA. This has been attributed to diffusion of carriers across the junction. ZnO/Si_RCA shows a high ideality factor of 18.9 at 30 °C which decreases to 7.4 at 150 °C. ZnO/Si_HF shows a reduced ideality factor of 11.1 at 30 °C which further decreases to 6.6 at 150 °C. •Zn thin films were deposited on HF and RCA cleaned Si(111) substrate.•Specimens were oxidized in air at 800 °C to obtain ZnO thin films.•Surface and interfacial temperature-current-voltage measurements have been done.•Influence of native oxide layer on such measurements were analyzed.•Ideality factor reduces with increase in temperature.•Absence of native oxide layer results in better diode performance.
ISSN:	0921-4526 1873-2135
DOI:	10.1016/j.physb.2022.414271