Search Results - "Abelson, J. R."

HfB2 and Hf-B-N hard coatings by chemical vapor deposition by JAYARAMAN, S, GERBI, J. E, YANG, Y, KIM, D. Y, CHATTERJEE, A, BELLON, P, GIROLAMI, G. S, CHEVALIER, J. P, ABELSON, J. R

“…Hard, dense and conformal hafnium diboride (HfB2) thin films were obtained by CVD from the precursor Hf[BH4]4 at deposition temperatures < or = 350 deg C…”
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Tribological behavior of hafnium diboride thin films by Chatterjee, A., Jayaraman, S., Gerbi, J.E., Kumar, N., Abelson, J.R., Bellon, P., Polycarpou, A.A., Chevalier, J.P.

“…Transition metal diborides and their coatings offer an excellent combination of high hardness, high chemical stability and high thermal conductivity, thus they…”
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Growth Inhibitor To Homogenize Nucleation and Obtain Smooth HfB2 Thin Films by Chemical Vapor Deposition by Babar, S, Kumar, N, Zhang, P, Abelson, J. R, Dunbar, A. C, Daly, S. R, Girolami, G. S

“…We describe an example of a new phenomenon: the use of a growth inhibitor to homogenize nucleation and improve the smoothness of a thin film deposited by…”
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Anomalously high thermal conductivity of amorphous Si deposited by hot-wire chemical vapor deposition by Yang, Ho-Soon, Cahill, David G., Liu, X., Feldman, J. L., Crandall, R. S., Sperling, B. A., Abelson, J. R.

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Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography by Schmucker, S.W., Kumar, N., Abelson, J.R., Daly, S.R., Girolami, G.S., Bischof, M.R., Jaeger, D.L., Reidy, R.F., Gorman, B.P., Alexander, J., Ballard, J.B., Randall, J.N., Lyding, J.W.

“…Fabrication of ultrasharp probes is of interest for many applications, including scanning probe microscopy and electron-stimulated patterning of surfaces…”
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Improved transparent conductive oxide/p +/i junction in amorphous silicon solar cells by tailored hydrogen flux during growth by Nuruddin, A., Abelson, J.R.

“…We use the contact potential (Kelvin probe) method to evaluate the electrostatic potential profile across the transparent conductive oxide/p/i junction in…”
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Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature by Voyles, P M, Gerbi, J E, Treacy, M M, Gibson, J M, Abelson, J R

“…Using fluctuation electron microscopy, we have observed an increase in the mesoscopic spatial fluctuations in the diffracted intensity from vapor-deposited…”
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Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface by Abelson, J. R.

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Hydrogen-induced modification of the medium-range structural order in amorphous silicon films by Nittala, L. N., Jayaraman, S., Sperling, B. A., Abelson, J. R.

“…We use fluctuation electron microscopy to determine changes in the medium-range structural order of un-hydrogenated amorphous silicon thin films after they are…”
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Mass and energy resolved detection of ions and neutral sputtered species incident at the substrate during reactive magnetron sputtering of Ti in mixed Ar+N2 mixtures by Petrov, I., Myers, A., Greene, J. E., Abelson, J. R.

“…The fluxes of ions and neutral sputtered particles incident at the growth surface during the deposition of TiN by reactive magnetron sputtering from a Ti…”
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Structural disorder induced in hydrogenated amorphous silicon by light soaking by Gibson, J. M., Treacy, M. M. J., Voyles, P. M., Jin, H-C., Abelson, J. R.

“…We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural…”
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Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon by PARK, H. R, LIU, J. Z, CABARROCAS, P. R, MARUYAMA, A, ISOMURA, M, WAGNER, S, ABELSON, J. R, FINGER, F

“…We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown…”
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Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy by KATIYAR, M, FENG, G. F, YANG, Y. H, ABELSON, J. R, MALEY, N

“…We use real time, high sensitivity infrared reflectance spectroscopy to quantitatively study hydrogen incorporation during the growth of hydrogenated amorphous…”
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An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering by McCormick, C. S., Weber, C. E., Abelson, J. R., Gates, S. M.

“…We deposited hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125 °C. We…”
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Highly conformal film growth by chemical vapor deposition. I. A conformal zone diagram based on kinetics by Yanguas-Gil, A., Yang, Y., Kumar, N., Abelson, J. R.

“…The authors present a unified description of conformal film growth in recessed features by low pressure chemical vapor deposition. Experimental data on step…”
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Conformal growth of low friction HfBxCy hard coatings by Mohimi, E., Ozkan, T., Babar, S., Polycarpou, A.A., Abelson, J.R.

“…Thin films of HfBxCy are deposited in a cold wall CVD apparatus using Hf(BH4)4 precursor and 3,3-dimethyl-1-butene, (CH3)3CCHCH2, as a controllable source of…”
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Interference enhanced Raman scattering of hydrogenated amorphous silicon revisited by Gupta, S., Morell, G., Katiyar, R. S., Abelson, J. R., Jin, H.-C., Balberg, I.

“…We report interference enhanced Raman scattering (IERS) of very thin and highly absorbing (α>105 cm−1) device‐quality hydrogenated amorphous silicon (a‐Si : H)…”
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Methods to enhance absorption signals in infrared reflectance spectroscopy: A comparison using optical simulations by Katiyar, M., Abelson, J. R.

“…We use optical simulations to determine the substrate and experimental geometry that should be used to enhance infrared absorption signals from thin films in a…”
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Highly conformal film growth by chemical vapor deposition. II. Conformality enhancement through growth inhibition by Yanguas-Gil, A., Kumar, N., Yang, Y., Abelson, J. R.

“…The authors present a novel strategy for enhancing conformality in chemical vapor deposition (CVD) based on the concept of growth inhibition. In Part I, they…”
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Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption by Kim, H., Taylor, N., Spila, T., Glass, G., Park, S.Y., Greene, J.E., Abelson, J.R.

“…D 2 temperature-programmed desorption (TPD) was used to probe the structure of the Si(011)-(16 × 2) surface. Deuterium was adsorbed at 200°C to coverages θ D…”
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